AO8820 20V Common-Drain Dual N-Channel Mosfet General Description The AO8820 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Features VDS 20V ID (at VGS=10V) 7A RDS(ON) (at VGS=10V) < 21mΩ RDS(ON) (at VGS=4.5V) < 24mΩ RDS(ON) (at VGS=3.6V) < 28mΩ RDS(ON) (at VGS=2.5V) < 32mΩ RDS(ON) (at VGS=1.8V) < 50mΩ ESD protected! D2 D1 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G2 G1 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 1.5 W 0.96 TJ, TSTG Symbol t ≤ 10s V 30 PD TA=70°C ±12 5.5 IDM TA=25°C Power Dissipation B Units V 7 ID TA=70°C Maximum 20 RθJA RθJL °C -55 to 150 Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W www.freescale.net.cn AO8820 20V Common-Drain Dual N-Channel Mosfet Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±10V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=7A 13 TJ=55°C 5 TJ=125°C 10 µA 1.1 V 17.2 21 24 29 A 15 19.4 24 VGS=3.6V, ID=6A 16 20.7 28 VGS=2.5V, ID=5.5A 18 25 32 35 50 gFS Forward Transconductance VDS=5V, ID=7A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=10V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge mΩ S 1 V 2.5 A 500 pF 100 pF 52 pF 6 VGS=4.5V, VDS=10V, ID=7A µA 0.8 VGS=4.5V, ID=6.6A VGS=1.8V, ID=2A Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=16V, VGS=0V IDSS RDS(ON) Typ 9 nC 2 nC Qgd Gate Drain Charge 1 nC tD(on) Turn-On DelayTime 0.2 us tr Turn-On Rise Time 1.5 us tD(off) Turn-Off DelayTime 7.4 us tf Turn-Off Fall Time 18 us ns nC VGS=5V, VDS=10V, RL=1.4Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=7A, dI/dt=100A/µs 9 Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs 10 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AO8820 20V Common-Drain Dual N-Channel Mosfet TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V VDS=5V 3V 25 15 4V 2V ID(A) ID (A) 20 15 10 10 125°C 5 5 25°C VGS=1.5V 0 0 0 1 2 3 4 0 5 50 1 1.5 2 2.5 40 VGS=2.5V VGS=3.6V 30 20 10 VGS=4.5V VGS=10V Normalized On-Resistance 1.8 VGS=1.8V RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=2.5V ID=5.5A 1.6 VGS=4.5V ID=6.6A 1.4 17 5 VGS=10V ID=7A 2 10 1.2 VGS=1.8V ID=2A 1 0.8 0 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 80 1.0E+01 ID=7A 70 1.0E+00 40 1.0E-01 50 IS (A) RDS(ON) (mΩ Ω) 60 125°C 1.0E-02 40 125°C 1.0E-03 25°C 30 20 25°C 1.0E-05 10 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 1.0E-04 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO8820 20V Common-Drain Dual N-Channel Mosfet TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS=10V ID=7A 4 Ciss Capacitance (pF) VGS (Volts) 600 3 2 400 Coss 200 1 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 20 RDS(ON) limited 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 TA=25°C 10µs 100µs 1000 Power (W) 10.0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.0 ID (Amps) Crss 0 10s DC 100 10 1 0.0 0.00001 0.01 0.1 1 VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=83°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO8820 20V Common-Drain Dual N-Channel Mosfet Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig 5/5 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.freescale.net.cn