UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3.0 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 4.2Ω @VGS = 10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 11 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N80L-TA3-T 3N80G-TA3-T 3N80L-TF3-T 3N80G-TF3-T 3N80L-TF1-T 3N80G-TF1-T 3N80L-TF2-T 3N80G-TF2-T 3N80L-TM3-T 3N80G-TM3-T 3N80L-TMS4-R 3N80G-TMS4-R 3N80L-TN3-R 3N80G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 TO-251 TO-251S4 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tape Reel 1 of 8 QW-R502-283.J 3N80 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-283.J 3N80 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS 800 V Drain-Gate Voltage (RG=20kΩ) VDGR 800 V Gate-Source Voltage VGSS ±30 V Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30 (MIN) V Insulation Withstand Voltage (DC) TO-220F/ TO-220F1 VISO 2500 V Avalanche Current (Note 2) IAR 3 A Continuous Drain Current ID 3 A Pulsed Drain Current IDM 10 A Single Pulse Avalanche Energy (Note 3) EAS 170 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 70 TO-220F/ TO-220F1 25 Power Dissipation PD W TO-220F2 TO-251/TO-251S4 50 TO-252 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX). 3. Starting TJ=25 °C, ID=IAR, VDD=50V 4. ISD≦2.5A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX). THERMAL DATA Junction to Ambient Junction to Case PARAMETER TO-220TO-220F TO-220F1/TO-220F2 TO-251/TO-251S4 TO-252 TO-220 TO-220F/ TO-220F1 TO-220F2 TO-251/TO-251S4 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATING UNIT 62.5 θJA °C/W 110 1.78 θJC 5 °C/W 2.5 3 of 8 QW-R502-283.J 3N80 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 800 V Drain-Source Leakage Current IDSS VDS=800V, VGS=0V 1 μA Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V ±10 μA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 3 3.75 4.5 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A 3.2 4.2 Ω Forward Transconductance (Note 1) gFS VDS=15V, ID=1.5A 2.1 S DYNAMIC CHARACTERISTICS Input Capacitance CISS 485 pF VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS 57 pF 11 pF Reverse Transfer Capacitance CRSS Equivalent Output Capacitance (Note 2) COSS(EQ) VGS=0V, VDS=0V~640V 22 pF SWITCHING CHARACTERISTICS Total Gate Charge QG 19 nC VDD=640V, ID=3A, VGS=10V Gate-Source Charge QGS 3.2 nC 10.8 nC Gate-Drain Charge QDD Turn-On Delay Time tD(ON) 17 ns Turn-On Rise Time tR 27 ns VDD=400V, ID=3 A, RG=4.7Ω, VGS=10V Turn-Off Delay Time tD(OFF) 36 ns Turn-Off Fall Time tF 40 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Source-Drain Current ISD 2.5 A Source-Drain Current (Pulsed) ISDM 10 A ISD=3A, di/dt=100A/μs, 8.4 A Reverse Recovery Current IRRM VDD=50V, TJ=25°C Diode Forward Voltage(Note 1) VSD ISD=3A ,VGS=0V 1.6 V Body Diode Reverse Recovery Time trr 384 ns Body Diode Reverse Recovery Charge QRR 1600 nC Note: 1. Pulse width = 300μs, Duty cycle≦1.5% Note: 2. COSS(EQ) is defined as constant equivalent capacitance giving the same charging time as COSS when VDS increases from 0to 80% VDSS. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-283.J 3N80 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + ISD - L RG Driver VGS * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VDD Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-283.J 3N80 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-283.J 3N80 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage 4 1000 Drain Current, ID (mA) 3 Drain Current,ID (A) Drain-Source On-State Resistance Characteristics 1200 2 1 800 VGS=10V, ID=1.25A 600 400 200 0 0 0 200 400 600 800 1000 Source to Drain Voltage,VSD (mV) Drain Current vs. Gate Threshold Voltage 4 3 Drain Current vs. Drain-Source Breakdown Voltage 400 Drain Current,ID (µA) 250 Drain Current,ID (µA) 2 Drain to Source Voltage, VDS (V) 300 200 150 100 50 350 300 250 200 150 100 50 0 1 2 4 3 Gate Threshold Voltage,VTH (V) 0 0 200 400 600 800 1000 Drain-Source Breakdown Voltage,BVDSS(V) Drain Current, ID (A) 0 1 0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-283.J 3N80 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-283.J