UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N75 is an N-Channel power MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and high switching speed. FEATURES * 80A, 75V, RDS(ON)=10mΩ @VGS=10V, ID=20A * Low gate charge ( typical 117nC) * High switching speed ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT80N75L-TA3-T UTT80N75G-TA3-T UTT80N75L-TN3-R UTT80N75G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-881.b UTT80N75 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 75 V ±25 V Continuous 80 A Drain Current Pulsed 320 A Avalanche Energy Single Pulsed 330 mJ TO-220 167 W Power Dissipation PD TO-252 50 W Junction Temperature TJ -50 ~ +150 °C Storage Temperature Range TSTG -50 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS ID IDM EAS THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220 TO-252 TO-220 TO-252 θJA θJC RATINGS 62.5 110 0.75 2.5 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=75V, VGS=0V Forward VGS=+25V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-25V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDD=60V, ID=40A, Gate to Source Charge QGS IG=3.33mA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=1.0A, RG=4.6Ω, V Turn-OFF Delay Time tD(OFF) GS=10V Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=80A, VGS=0V Body Diode Reverse Recovery Time tRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 75 V 10 µA +100 nA -100 nA 2 10 4 12 V mΩ 3700 730 240 pF pF pF 117 27 47 25 25 66 30 nC nC nC ns ns ns ns 80 320 1.5 A A V ns 2 of 3 QW-R502-881.b UTT80N75 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-881.b