Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT80N75
Power MOSFET
80A, 75V N-CHANNEL POWER
MOSFET

DESCRIPTION
The UTC UTT80N75 is an N-Channel power MOSFET, it uses
UTC’s advanced technology to provide customers with a minimum
on-state resistance, low gate charge and high switching speed.

FEATURES
* 80A, 75V, RDS(ON)=10mΩ @VGS=10V, ID=20A
* Low gate charge ( typical 117nC)
* High switching speed

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT80N75L-TA3-T
UTT80N75G-TA3-T
UTT80N75L-TN3-R
UTT80N75G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source

Package
TO-220
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R502-881.b
UTT80N75

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
75
V
±25
V
Continuous
80
A
Drain Current
Pulsed
320
A
Avalanche Energy
Single Pulsed
330
mJ
TO-220
167
W
Power Dissipation
PD
TO-252
50
W
Junction Temperature
TJ
-50 ~ +150
°C
Storage Temperature Range
TSTG
-50 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
ID
IDM
EAS
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
TO-220
TO-252
TO-220
TO-252
θJA
θJC
RATINGS
62.5
110
0.75
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=75V, VGS=0V
Forward
VGS=+25V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-25V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDD=60V, ID=40A,
Gate to Source Charge
QGS
IG=3.33mA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=1.0A, RG=4.6Ω,
V
Turn-OFF Delay Time
tD(OFF)
GS=10V
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=80A, VGS=0V
Body Diode Reverse Recovery Time
tRR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
75
V
10
µA
+100 nA
-100 nA
2
10
4
12
V
mΩ
3700
730
240
pF
pF
pF
117
27
47
25
25
66
30
nC
nC
nC
ns
ns
ns
ns
80
320
1.5
A
A
V
ns
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UTT80N75
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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