ESTEK ET75N08

ET75N08
80V, 75A, N-Channel Power MOSFET
‹
VDSS=80V
¾
¾
¾
¾
¾
IDS=75A
RDS(ON)=6.5mΩ
‹
Symbol
‹
¾
¾
¾
¾
¾
‹
Pin Description
‹
Ordering Information
Part Number
Package
ET75N08-263-R
Features
RDS(ON)= (Typical 6.5mΩ)@VGS=10V
Ultra Low Gate Charge (Typical 117nC)
Fast Switching Capability
Avalanche Energy Specified
Maximum Junction Temperature Range
(175oC)
Applications
Switching Application
DC Motor Control
Automotive Environment
Solenoid and Relay Drivers
E-bike
Pin Assignment
Packing
1
2
3
TO-263
G
D
S
Reel
ET75N08-220-T
TO-220
G
D
S
Tube
ET75N08-220F-T
TO-220F
G
D
S
Tube
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1
Copyright @ Estek Electronics Co., Ltd
Version 0.2
1st Nov 2011
ET75N08
‹
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
Drain to Source Voltage
80
V
Continuous Drain Current(@TC = 25 °C)
75
A
52.5
A
Continuous Drain Current(@TC = 100 °C)
..(1)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
EAR
dv/dt
PD
320
A
±25
Single Pulsed Avalanche Energy
V
..(2)
mJ
..(1)
mJ
800
Repetitive Avalanche Energy
17.3
..(3)
Peak Diode Recovery dv/dt
12
V/ns
Total Power Dissipation(@TC = 25 °C)
300
W
Derating Factor above 25 °C
1.15
W/°C
TSTG
Storage Temperature
-55 ~ +175
°C
TJ
Junction Temperature
+175
°C
Notes:
(1)..
Repeativity rating : pulse width limited by junction temperature
(2)..
IAS = 40 A, VDD = 37.5 V, RG = 25 Ω , Starting TJ = 25 °C
(3)..
ISD ≤ 80 A, di/dt ≤ 300 A/us, VDD ≤ BVDSS, Starting TJ = 25 °C
‹
Thermal Characteristics
Symbol
‹
Value
Parameter
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
-
-
0.87
°C/W
RθCS
Thermal Resistance, Case to Sink
-
0.5
-
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
°C/W
Source-Drain Diode Characteristics and Maximum Ratings
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
-
75
IS
Maximum Continuous Source-Drain Diode
Forward Current
-
ISM
Maximum Pulsed Source-Drain Diode
Forward Current
-
-
320
VSD
Diode Forward
Voltage
IS = 75 A, VGS = 0 V
-
-
1.5
IS = 75 A,
VDD = 25 V,
dIF/dt = 100 A/us
-
132
-
-
660
-
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
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2
Units
A
V
ns
uC
Copyright @ Estek Electronics Co., Ltd
Version 0.2
1st Nov 2011
ET75N08
Electrical Characteristics (TC=25 °C unless otherwise noted )
‹
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
85
-
-
V
Off Characteristics
BVDSS
Drain-Source
Breakdown Voltage
VGS = 0 V,
ID = 250 uA
ΔBVDSS/
ΔTJ
Breakdown Voltage
Temperature
coefficient
ID = 250 uA,
Referenced to
25 °C
-
0.08
-
V/°C
VDS = 75 V,
VGS = 0 V
-
-
1
uA
VDS = 64 V,
TC = 125 °C
-
-
100
uA
Gate-Source Leakage,
Forward
VGS = 20 V,
VDS = 0 V
-
-
100
nA
Gate-source Leakage,
Reverse
VGS = -20 V,
VDS = 0 V
-
-
-100
nA
IDSS
IGSS
Drain-Source Leakage
Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250 uA
2.0
2.8
4.0
V
RDS(ON)
Static Drain-Source
On-state Resis-tance
VGS = 10 V,
ID = 40 A
-
6.5
7.3
mΩ
Dynamic Characteristics
VGS = 0 V,
VDS =25 V,
f = 1 MHz
-
3700
-
-
330
-
-
240
-
Turn-on Delay Time
VDD = 37.5 V,
-
25
-
Rise Time
VDS = 10 V,
ID = 45 A,
RG =4.7 Ω
Pulse Width ≤ 300us,
-
100
-
-
66
-
-
30
-
-
117
160
-
27
-
-
47
-
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
pF
Dynamic Characteristics
td(on)
tr
td(off)
Turn-off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Miller Charge)
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VDS = 60 V,
VGS = 10 V,
ID = 75 A
3
ns
nC
Copyright @ Estek Electronics Co., Ltd
Version 0.2
1st Nov 2011
ET75N08
‹
Typical Characteristics
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Copyright @ Estek Electronics Co., Ltd
Version 0.2
1st Nov 2011
ET75N08
‹
Test Circuits And Waveforms
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Copyright @ Estek Electronics Co., Ltd
Version 0.2
1st Nov 2011
ET75N08
‹
Test Circuits And Waveforms (Continued)
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Copyright @ Estek Electronics Co., Ltd
Version 0.2
1st Nov 2011
ET75N08
‹
Package Information
TO-263-3
www.estek.com.cn
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Copyright @ Estek Electronics Co., Ltd
Version 0.2
1st Nov 2011
ET75N08
‹
Package Information
TO-220
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Copyright @ Estek Electronics Co., Ltd
Version 0.2
1st Nov 2011
ET75N08
‹
Package Information
TO-220FP
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Copyright @ Estek Electronics Co., Ltd
Version 0.2
1st Nov 2011