UNISONIC TECHNOLOGIES CO., LTD UT4466 Preliminary Power MOSFET 10A, 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC UT4466 is an N-channel Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and low gate charge. SOP-8 FEATURES * RDS(ON) < 15mΩ @ VGS=10V, ID=10A * High switching speed * Low gate charge (Typ.=10.5nC) SYMBOL ORDERING INFORMATION Ordering Number Note: UT4466G-S08-R Pin Assignment: G: Gate Package D: Drain SOP-8 S: Source 1 S 2 S Pin Assignment 3 4 5 6 S G D D 7 D 8 D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-863.b UT4466 Preliminary Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-863.b UT4466 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 30 V ±25 V 10 A TA=25°C Continuous(Note 2) ID Drain Current TA=85°C 6 A Pulsed (Note 3) IDM 60 A Avalanche Current (Note 3, 4) IAR 16 A Repetitive Avalanche Energy (Note 3, 4) L=0.1mH EAR 12.8 mJ Power Dissipation (Note 2) PD 1.42 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Device mounted on FR-4 substrate PC board with minimum recommended pad layout in a still air environment @ TA=25°C. The value in any given application depends on the user's specific board design. 3. Repetitive rating, pulse width limited by junction temperature. 4. IAR and EAR rating are based on low frequency and duty cycles to keep TJ=25°C SYMBOL VDSS VGSS THERMAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Junction to Ambient (Note 1) SYMBOL θJA RATINGS 88.4 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS (Note 1) Gate Threshold Voltage SYMBOL Static Drain-Source On-State Resistance RDS(ON) BVDSS IDSS IGSS VGS(TH) TEST CONDITIONS ID=250µA, VGS=0V VDS=30V, VGS=0V VGS=+25V, VDS=0V VGS=-25V, VDS=0V 30 VDS=VGS, ID=250µA VGS=10V, ID=10A VGS=4.5V, ID=7.5A VDS=5V, ID=10A 1.0 Forward Transfer Admittance |YFS| DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VGS=0V, VDS=15V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Gate Resistance RG VDS=0V, VGS=0V, f=1MHz Total Gate Charge QG VGS=4.5V, VDS=15V, ID=10A Total Gate Charge QG VGS=10V, VDS=15V, ID=10A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDS=15V, VGS=10V, RG=3Ω, RL=1.5Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=1A, VGS=0V Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. Guaranteed by design. Not subject to production testing. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 +100 -100 1.45 15 25 2.5 2.4 23 33 478.9 96.7 61.4 0.4 V µA nA nA V mΩ mΩ S pF pF pF 1.1 5.0 10.5 1.8 1.6 2.9 7.9 14.6 3.1 1.6 8 17 Ω nC nC nC nC ns ns ns ns 0.69 1 V 3 of 6 QW-R502-863.b UT4466 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS RG 90% RD VGS VDS 10V 10% DUT VGS td(ON) tON Resistive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR td(OFF) tF tOFF Resistive Switching Waveforms 4 of 6 QW-R502-863.b UT4466 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-863.b UT4466 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-863.b