UNISONIC TECHNOLOGIES CO., LTD UTT100N08M POWER MOSFET 100A, 80V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT100N08M is an N-channel Power MOSFET, it uses UTC’s advanced technology that is uniquely optimized to provide an extremely low on-state resistance and low gate charge, etc. The UTC UTT100N08M is suitable for synchronous rectification in SMPS, UPS, high speed power switching, etc. FEATURES * RDS(ON) < 10mΩ @ VGS=10V, ID=40A RDS(ON) < 15mΩ @ VGS=4.5V, ID=20A * High power and current handling capability * High speed switching * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Lead Free Halogen Free 1 2 3 4 5 6 7 UTT100N08ML-TM3-R UTT100N08MG-TM3-R G D S - - - TO-251 UTT100N08MG-K08-5060-R DFN-8(5×6) S S S G D D D Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 8 D Packing Tube Tape Reel 1 of 7 QW-R209-109.D UTT100N08M Power MOSFET MARKING TO-251 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw DFN-8(5×6) 2 of 7 QW-R209-109.D UTT100N08M Power MOSFET ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 80 V Gate-Source Voltage VGSS ±20 V Drain Current(Note2) Continuous TC=25°C ID 100 A Pulsed Drain Current(Note 3) IDM 400 A Avalanche Current IAS 70 A Avalanche Energy (Note4) EAS 245 mJ TO-251 150 W Power Dissipation TC=25°C PD DFN-8(5×6) 30 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Current limited by bond wire. 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L=0.1mH, IAS=70A, VDD=50V, RG=25Ω, Starting TJ = 25°C 5. ISD ≤ 20A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 150°C THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case TO-251 steady state DFN-8(5×6) TO-251 steady state DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 110 40.3 0.83 4.17 UNIT °C/W °C/W °C/W °C/W 3 of 7 QW-R209-109.D UTT100N08M Power MOSFET ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=80V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 80 VDS=VGS, ID=250µA VGS=10V, ID=40A VGS=4.5V, ID=20A 1.5 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-on Delay Time tD(ON) Rise Time tR VDD =30V, ID =0.5A, RG=25Ω (Note 1, 2) Turn-off Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IF=100A, VGS=0V Body Diode Reverse Recovery Time (Note 1) trr IF=20A, dIS/dt=100A/µs Body Diode Reverse Recovery Charge (Note 1) Qrr Note: Pulse test: pulse width ≤ 300us, duty cycle ≤ 2%, Starting TJ=25°C. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 +100 -100 V µA nA nA 2.3 10 15 V mΩ mΩ 3700 730 240 pF pF pF 117 27 47 25 100 66 30 nC nC nC ns ns ns ns 0.85 132 660 100 280 1.4 A A V ns nC 4 of 7 QW-R209-109.D UTT100N08M Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-109.D UTT100N08M Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-109.D UTT100N08M Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-109.D