UNISONIC TECHNOLOGIES CO., LTD UTN6266 Preliminary Power MOSFET 30A, 60V N-CHANNEL TRENCH MOSFET DESCRIPTION 1 The UTC UTN6266 is an N-Channel trench mosfet, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UTN6266 is suitable for Synchronus Rectification in DC/DC and AC/DC Converters and industrial and Motor Drive applications. 1 TO-251 TO-220 1 FEATURES SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTN6266L-TA3-R UTN6266G-TA3-R TO-220 UTN6266L-TM3-R UTN6266G-TM3-R TO-251 UTN6266G-S08-R SOP-8 UTN6266G-K08-5060-R DFN-8(5×6) Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd DFN-8(5x6) SOP-8 * RDS(ON)<15mΩ @ VGS=10V, ID=20A RDS(ON)<19mΩ @ VGS=4.5V, ID=18A * Low gate charge * Low RDS(ON) * High switching speed 1 G G S S 2 D D S S Pin Assignment 3 4 5 6 S - - S - - S G D D S G D D 7 D D 8 D D Packing Tape Reel Tube Tape Reel Tape Reel 1 of 7 QW-R502-B28.d UTN6266 Preliminary Power MOSFET MARKING Package Marking TO-220 / TO-251 SOP-8 DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-B28.d UTN6266 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 60 V ±20 V Continuous 30 A Drain Current Pulsed 90 A Avalanche Current (Note 3) 20 A Avalanche Energy (Note 2, 3) 280 mJ TO-220 2 W TO-251 1.2 W Power Dissipation PD SOP-8 1.5 W DFN-8(5×6) 1.92 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Single pulse width by junction temperature TJ(max)=150°C. 3. L = 1.4mH, IAS = 20A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C SYMBOL VDSS VGSS ID IDM IAS EAS THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS TO-220 200 TO-251 60 Junction to Ambient θJA SOP-8 85 DFN-8(5×6) 65 TO-220 4.38 TO-251 2.6 Junction-to-Case θJC SOP-8 24 DFN-8(5×6) 12 Notes: 1. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient. 2. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W 3 of 7 QW-R502-B28.d UTN6266 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Zero Gate Voltage Drain Current Gate-Body Leakage Current IDSS Forward Reverse IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=60V, VGS=0V VDS=60V, VGS=0V, TJ=55°C VGS=+20V, VDS=0V VGS=-20V, VDS=0V 60 VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=10V, ID=20A, TJ=125°C VGS=4.5V, ID=18A 1.5 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=30V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG f=1.0MHz SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=30V, ID=20A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VGS=10V, VDS=30V, RL=1.5Ω, Rise Time tR RGEN=3Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Drain-Source Diode Forward Voltage (Note2) VSD IS=1A, VGS=0V Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤ 300us, duty cycle ≤ 2%. 3. Surface Mounted on 1in 2 pad area. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 2.0 12 20.5 15 1 5 +100 -100 V µA µA nA nA 2.5 15 25 19 V mΩ mΩ mΩ 390 190 170 1.1 pF pF pF Ω 6 0.5 0.5 60 75 500 230 nC nC nC ns ns ns ns 0.72 30 1 A V 4 of 7 QW-R502-B28.d UTN6266 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-B28.d UTN6266 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R502-B28.d UTN6266 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-B28.d