UTC-IC UTD484

UNISONIC TECHNOLOGIES CO., LTD
UTD484
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
„
DESCRIPTION
The UTD484 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
„
FEATURES
* RDS(ON) = 15mΩ @VGS = 10 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
„
*Pb-free plating product number: UTD484L
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UTD484-TN3-R
UTD484L-TN3-R
UTD484-TN3-T
UTD484L-TN3-T
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tape Reel
Tube
1 of 7
QW-R502-207.A
UTD484
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TC=25°C
ID
25
A
Pulsed Drain Current(Note 1)
IDM
80
A
Avalanche Current(Note 1)
IAR
15
A
Repetitive avalanche energy L=0.3mH(Note 1)
EAR
33
mJ
TC=25°C
50
Power Dissipation
W
PD
TA=25°C
2.1
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
„
THERMAL DATA
PARAMETER
SYMBOL
θJA
θJC
Junction-to-Ambient
Junction-to-Case
„
MIN
TYP
55
2.3
MAX
60
3
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
Static Drain-Source On-Resistance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS =0 V, ID =250 µA
VDS =24V, VGS =0 V
VDS =0 V, VGS = ±20V
30
VGS(TH)
ID(ON)
VDS =VGS, ID =250 µA
VDS =5 V, VGS =10V
VGS =10 V, ID =20 A
VGS =4.5 V, ID =15 A
1
80
RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =15 V, VGS =0V, f=1MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS =15V, VGS =10V, ID =20 A
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=10V,VDS=15V,RL=0.75Ω,
RGEN =3Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A,VGS=0V
Maximum Body-Diode Continuous
IS
Current
Body Diode Reverse Recovery Time
tRR
IF=20 A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
UNIT
1
±100
V
µA
nA
1.5
2.5
12.1
18.5
15
23
938
142
99
1220
17.5
3
4.1
5
12
19
6
21
0.71
1
V
21
A
21
12
ns
nC
19
10
V
A
mΩ
pF
nC
ns
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QW-R502-207.A
UTD484
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current,ID (A)
Drain Current,ID (A)
„
On-Resistance vs. Drain Current and
Gate Voltage
20
1.6
Normalized On-Resistance
Drain to Source On-Resistance,
RDS(ON) (mΩ)
25
VGS=4.5V
15
VGS=10V
10
5
Pulse width ≤80μs,
duty cycle ≤0.5%.
0
4
8
12
16
Drain Current,ID (A)
1.4
VGS=10V
ID=20A
1.2
1
VGS=4.5V
ID=15A
0.8
0.6
-25 -50
20
Pulse width ≤80μs,
duty cycle ≤0.5%.
0 25 50 75 100 125 150 175
Junction Temperature (°С)
Reverse Drain Current,IS (A)
Drain to Source On-Resistance,
RDS(ON) (mΩ)
0
On-Resistance vs. Junction Temperature
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QW-R502-207.A
UTD484
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Power (W)
Drain Current,ID (A)
Capacitance (pF)
Gate to Source Voltage,VGS (V)
„
Normalized Maximum Transient Thermal Impedance
Normalized Transient Thermal
Resistance,ZθJC
10
D=TON/T
TJ,PK=Tc+PDM.ZθJc.θJc
θJA=3°С/W
In descending order
D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse
1
PDM
0.1
TON
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
0.01
Pulse Width (s)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1
10
100
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UTD484
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
„
Single Pulse Avalanche Capability
tA=
35
L·LD
BV-VDD
30
TA=25°С
25
TA=150°С
20
Power De-Rating
40
Power Dissipation (W)
Peak Avalanche Current,ID (A)
40
15
10
30
20
10
5
0
0
0.000001
0
0.001
25
75 100 125 150
50
Case Temperature,TC (°С)
175
Power (W)
Current Rating,ID (A)
0.00001
0.0001
Time in Avalanche,tA (s)
Normalized Maximum Transient Thermal Impedance
Normalized Transient Thermal
Resistance,ZθJA
10
D=TON/T
TJ,PK=TA+PDM.ZθJA.θJA
θJA=60°С/W
10
1
In descending order
D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse
0.1
PDM
0.01
TON
Single Pulse
0.001
0.00001
0.0001
0.001
T
0.01
0.1
Pulse Width (s)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1
10
100
1000
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QW-R502-207.A
UTD484
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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