UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 15mΩ @VGS = 10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified *Pb-free plating product number: UTD484L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UTD484-TN3-R UTD484L-TN3-R UTD484-TN3-T UTD484L-TN3-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 7 QW-R502-207.A UTD484 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current TC=25°C ID 25 A Pulsed Drain Current(Note 1) IDM 80 A Avalanche Current(Note 1) IAR 15 A Repetitive avalanche energy L=0.3mH(Note 1) EAR 33 mJ TC=25°C 50 Power Dissipation W PD TA=25°C 2.1 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER SYMBOL θJA θJC Junction-to-Ambient Junction-to-Case MIN TYP 55 2.3 MAX 60 3 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Body Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS =0 V, ID =250 µA VDS =24V, VGS =0 V VDS =0 V, VGS = ±20V 30 VGS(TH) ID(ON) VDS =VGS, ID =250 µA VDS =5 V, VGS =10V VGS =10 V, ID =20 A VGS =4.5 V, ID =15 A 1 80 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VDS =15 V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS =15V, VGS =10V, ID =20 A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V,VDS=15V,RL=0.75Ω, RGEN =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A,VGS=0V Maximum Body-Diode Continuous IS Current Body Diode Reverse Recovery Time tRR IF=20 A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±100 V µA nA 1.5 2.5 12.1 18.5 15 23 938 142 99 1220 17.5 3 4.1 5 12 19 6 21 0.71 1 V 21 A 21 12 ns nC 19 10 V A mΩ pF nC ns 2 of 6 QW-R502-207.A UTD484 Power MOSFET TYPICAL CHARACTERISTICS Drain Current,ID (A) Drain Current,ID (A) On-Resistance vs. Drain Current and Gate Voltage 20 1.6 Normalized On-Resistance Drain to Source On-Resistance, RDS(ON) (mΩ) 25 VGS=4.5V 15 VGS=10V 10 5 Pulse width ≤80μs, duty cycle ≤0.5%. 0 4 8 12 16 Drain Current,ID (A) 1.4 VGS=10V ID=20A 1.2 1 VGS=4.5V ID=15A 0.8 0.6 -25 -50 20 Pulse width ≤80μs, duty cycle ≤0.5%. 0 25 50 75 100 125 150 175 Junction Temperature (°С) Reverse Drain Current,IS (A) Drain to Source On-Resistance, RDS(ON) (mΩ) 0 On-Resistance vs. Junction Temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-207.A UTD484 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Power (W) Drain Current,ID (A) Capacitance (pF) Gate to Source Voltage,VGS (V) Normalized Maximum Transient Thermal Impedance Normalized Transient Thermal Resistance,ZθJC 10 D=TON/T TJ,PK=Tc+PDM.ZθJc.θJc θJA=3°С/W In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse 1 PDM 0.1 TON T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 0.01 Pulse Width (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 10 100 4 of 6 QW-R502-207.A UTD484 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Single Pulse Avalanche Capability tA= 35 L·LD BV-VDD 30 TA=25°С 25 TA=150°С 20 Power De-Rating 40 Power Dissipation (W) Peak Avalanche Current,ID (A) 40 15 10 30 20 10 5 0 0 0.000001 0 0.001 25 75 100 125 150 50 Case Temperature,TC (°С) 175 Power (W) Current Rating,ID (A) 0.00001 0.0001 Time in Avalanche,tA (s) Normalized Maximum Transient Thermal Impedance Normalized Transient Thermal Resistance,ZθJA 10 D=TON/T TJ,PK=TA+PDM.ZθJA.θJA θJA=60°С/W 10 1 In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse 0.1 PDM 0.01 TON Single Pulse 0.001 0.00001 0.0001 0.001 T 0.01 0.1 Pulse Width (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 10 100 1000 5 of 6 QW-R502-207.A UTD484 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-207.A