Datasheet

UNISONIC TECHNOLOGIES CO., LTD
6N70-P
Power MOSFET
6.0A, 700V N-CHANNEL
POWER MOSFET
1
1
TO-220F

DESCRIPTION
The UTC 6N70-P is an N-channel mode power MOSFET
using UTC’s advanced technology to provide customers with a
minimum on-state resistance, high switching speed, low gate
charge and low input capacitance.
The UTC 6N70-P is universally applied in high efficiency
switch mode power supply.

FEATURES
1
1
TO-251
TO-251L
1
1
TO-251S
TO-251S2
1
1
* RDS(ON) < 1.8Ω @ VGS=10V, ID=3A
* High switching speed

TO-220F2
TO-251S4
TO-252
SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N70L-TF2-T
6N70G-TF2-T
6N70L-TF3-T
6N70G-TF3-T
6N70L-TM3-T
6N70G-TM3-T
6N70L-TMA-T
6N70G-TMA-T
6N70L-TMS-T
6N70G-TMS-T
6N70L-TMS2-T
6N70G-TMS2-T
6N70L-TMS4-T
6N70G-TMS4-T
6N70L-TN3-R
6N70G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220F2
TO-220F
TO-251
TO-251L
TO-251S
TO-251S2
TO-251S4
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
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QW-R502-968.E
6N70-P

Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
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6N70-P

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage (Note 2)
Drain Current
Continuous
SYMBOL
VDSS
VGSS
TC=25°C
TC=100°C
ID
RATINGS
700
±30
6
3.8
24
6
200
13
2.5
42
40
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
RATINGS
62.5
UNIT
°С/W
110
°С/W
2.9
3.1
°С/W
°С/W
2.27
°С/W
Pulsed
IDM
Avalanche Current (Note 2)
IAR
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
TO-220F2
TO-220F
Power Dissipation
W
TO-251/TO-252
TO-251L/TO-251S
55
TO-251S2/TO-251S4
PD
TO-220F2
0.33
TO-220F
0.32
Linear Derarting
W/°C
TO-251/TO-252
Factor
TO-251L/TO-251S
0.44
TO-251S2/TO-251S4
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 12mH, IAS = 6A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C
4. ISD ≤ 6A, di/dt ≤140A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220F/TO-220F2
TO-251/TO-252
Junction to Ambient
TO-251L/TO-251S
TO-251S2/TO-251S4
TO-220F2
TO-220F
Junction to Case
TO-251/TO-252
TO-251L/TO-251S
TO-251S2/TO-251S4
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
BVDSS
ID=250µA, VGS=0V
∆BVDSS/∆TJ ID=250µA
VDS=700V
IDSS
VDS=560V, TC=125°C
VGS=+30V, VDS=0V
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
Output Capacitance
COSS
f=1.0MHz (Note 1, 2)
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDS=30V, ID=0.5A, RG=2.5Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VGS=10V, VDS=50V,
Gate to Source Charge
QGS
ID=1.3A (Note 1, 2)
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Integral reverse pn-diode in
Maximum Body-Diode Pulsed Current
the MOSFET
ISM
(Note 3)
Drain-Source Diode Forward Voltage
VSD
IS=6A, VGS=0V, TJ = 25°C
(Note 2)
Notes: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP MAX UNIT
700
0.79
2.0
V
V/°C
25
µA
250 µA
+100 nA
-100 nA
1.6
4.0
1.8
V
Ω
810
95
15
1000
135
25
pF
pF
pF
57
64
180
68
25
6.5
6.0
84
90
220
100
35
ns
ns
ns
ns
nC
nC
nC
6
A
24
A
1.4
V
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TEST CIRCUITS AND WAVEFORMS

Same Type
as DUT
12V
200nF
50kΩ
VDS
300nF
VGS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveforms
VDS
RG
90%
RD
VDS
VGS
10V
10%
DUT
VGS
td(ON)
tR
td(OFF) tF
tON
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
tOFF
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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Gate-Source Voltage, VGS (V)
TYPICAL CHARACTERISTICS
Capacitance (pF)

Power MOSFET
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TYPICAL CHARACTERISTICS(C

On-Resistance vs. Temperature
1.2
3.0
ID=250μA
Drain-Source On-Resistance,
RDS(ON) (Normalized)
Drain-Source Breakdown Voltage,
VDSS (Normalized)
Breakdown Voltage vs. Temperature
1.1
1.0
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
0.5
0.0
-100
200
-50
0
50
100
150
200
Junction Temperature, TJ (°C)
Junction Temperature, TJ (°C)
Drain Current, ID (A)
Drain Current, ID (A)
2.5
VGS=10V
ID=3.0A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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