Datasheet

UNISONIC TECHNOLOGIES CO., LTD
6N70K-MTQ
Power MOSFET
6.0A, 700V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 6N70K-MTQ is an N-channel mode power
MOSFET using UTC’s advanced technology to provide
customers with a minimum on-state resistance, high switching
speed, low gate charge and low input capacitance.
The UTC 6N70K-MTQ is universally applied in high
efficiency switch mode power supply.

FEATURES
* RDS(ON)<2.4Ω @ VGS=10V, ID = 3 A
* High switching speed

SYMBOL
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6N70K-MTQ

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N70KL-TA3-T
6N70KG-TA3-T
6N70KL-TF3-T
6N70KG-TF3-T
6N70KL-TF1-T
6N70KG-TF1-T
6N70KL-TF2-T
6N70KG-TF2-T
6N70KL-TF3-T
6N70KG-TF3-T
6N70KL-TM3-T
6N70KG-TM3-T
6N70KL-TMS-T
6N70KG-TMS-T
6N70KL-TMS2-T
6N70KG-TMS2-T
6N70KL-TMS4-T
6N70KG-TMS4-T
6N70KL-TN3-R
6N70KG-TN3-R
6N70KL-TND-R
6N70KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Power MOSFET
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
MARKING
UNISONIC TECHNOLOGIES CO., LTD
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
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage (Note 2)
VGSS
±30
V
Continuous TC=25°C
ID
6
A
Drain Current
Pulsed
IDM
24
A
Avalanche Current (Note 2)
IAR
6
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
75
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.5
V/ns
TO-220
125
TO-220F/TO-220F1
42
TO-220F2/TO-220F3
Power Dissipation
W
TO-251/TO-251S
TO-251S2/TO-251S4
55
TO-252/TO-252D
PD
TO-220
1
TO-220F
0.32
TO-220F1/TO-220F2
0.336
Linear Derarting Factor
W/°C
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
0.44
TO-252/TO-252D
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 5mH, IAS = 5.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 6A, di/dt ≤140A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
TO-220
TO-220F
TO-220F1/TO-220F2
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
UNISONIC TECHNOLOGIES CO., LTD
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RATINGS
UNIT
62.5
θJA
°С/W
110
3.1
1.0
θJC
2.9
°С/W
2.27
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
SYMBOL
TEST CONDITIONS
BVDSS
ID=250µA, VGS=0V
∆BVDSS/∆TJ ID=250µA
VDS=700V, VGS=0V
IDSS
VDS=560V, TC=125°C
VGS=+30V, VDS=0V
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V,
Output Capacitance
COSS
f=1.0MHz (Note 1, 2)
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω
VGS=10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VGS=10V, VDS=50V,
ID=1.3A, IG=100µA
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Integral reverse pn-diode in
Maximum Body-Diode Pulsed Current
the MOSFET
ISM
(Note 3)
Drain-Source Diode Forward Voltage
VSD
IS=6A, VGS=0V, TJ = 25°C
(Note 2)
Notes: 1. Pulse Test: Pulse width ≤ 250µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
700
0.79
2.0
2.0
V
V/°C
1
µA
250 µA
+100 nA
-100 nA
4.0
2.4
V
Ω
480
65
7.5
pF
pF
pF
70
61
140
41
45
7
7
ns
ns
ns
ns
nC
nC
nC
6
A
24
A
1.4
V
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TEST CIRCUITS AND WAVEFORMS

Same Type
as DUT
12V
200nF
50kΩ
VDS
300nF
VGS
DUT
3mA
Gate Charge Test Circuit
Gate Charge Waveforms
VDS
RG
90%
RD
VDS
VGS
10V
10%
DUT
VGS
td(ON)
tR
td(OFF) tF
tON
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
tOFF
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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TYPICAL CHARACTERISTICS
Body-Diode Continuous
Current, IS (A)

Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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