Datasheet

UNISONIC TECHNOLOGIES CO., LTD
6N60-P
Power MOSFET
6A, 600V N-CHANNEL POWER
MOSFET
1
1
TO-220F
TO-220

DESCRIPTION
The UTC 6N60-P is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in switching power
supplies and adaptors.

FEATURES
SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N60L-TA3-T
6N60G-TA3-T
6N60L-TF1-T
6N60G-TF1-T
6N60L-TF2-T
6N60G-TF2-T
6N60L-TF3-T
6N60G-TF3-T
6N60L-TM3-T
6N60G-TM3-T
6N60L-TN3-R
6N60G-TN3-R
6N60L-TQ2-T
6N60G-TQ2-T
6N60L-TQ2-R
6N60G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
1
TO-220F1
TO-220F2
1
1
* RDS(ON) < 1.75Ω @ VGS = 10V, ID = 3A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

1
TO-263
TO-251
1
TO-252
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
Tape Reel
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QW-R502-969.C
6N60-P

Power MOSFET
MARKING
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6N60-P

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
6
A
Continuous Drain Current
ID
6
A
Pulsed Drain Current (Note 2)
IDM
24
A
Single Pulsed (Note 3)
EAS
260
mJ
Avalanche Energy
13
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.0
ns
TO-220/TO-263
125
W
TO-220F/TO-220F1
40
W
Power Dissipation
PD
TO-220F2
42
W
TO-251/TO-252
55
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 14mH, IAS = 6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 6A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F2
TO-220F/TO-220F1
Junction to Ambient
TO-263
TO-251/TO-252
TO-220/TO-263
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATING
62.5
110
1.0
3.2
2.97
2.27
UNIT
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
600
V
VDS = 600V, VGS = 0V
10
μA
Forward
VGS = 30V, VDS = 0V
100 nA
Gate- Source Leakage Current
IGSS
-100 nA
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3A
1.2 1.75 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
751
pF
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
89
pF
17
pF
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
25
nC
VDS=50V, ID=1.3A, VGS=10 V
Gate-Source Charge
QGS
4.9
nC
(Note 1, 2)
9.4
nC
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
60
ns
Turn-On Rise Time
tR
80
ns
VDD=30V, ID =0.5A, RG =25Ω
IG = 100μA (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
230
ns
Turn-Off Fall Time
tF
90
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 6 A
1.4
V
Maximum Continuous Drain-Source Diode
IS
6
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
24
A
Forward Current
Reverse Recovery Time
trr
290
ns
VGS = 0 V, IS = 6 A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
3.0
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
Drain Current,ID (µA)
Drain Current,ID (µA)
Drain Current,ID (A)
Drain Current, ID (A)
TYPICAL CHARACTERISTICS

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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