Datasheet

UNISONIC TECHNOLOGIES CO., LTD
6N60-C
Power MOSFET
6.2A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 6N60-C is a high voltage power MOSFET and is
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristics. This power
MOSFET is usually used at high speed switching
applications in switching power supplies and adaptors.

FEATURES
* RDS(ON) < 1.5Ω @ VGS=10V, ID=3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
6N60L-TF3-T
6N60G-TF3-T
TO-220F
6N60L-TF1-T
6N60G-TF1-T
TO-220F1
6N60L-TMS-T
6N60G-TMS-T
TO-251S
6N60L-TMS2-T
6N60G-TMS2-T
TO-251S2
6N60L-TMS4-T
6N60G-TMS4-T
TO-251S4
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
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QW-R502-A50.C
6N60-C

Power MOSFET
MARKING
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6N60-C

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
6.2
A
Continuous Drain Current
ID
6.2
A
Pulsed Drain Current (Note 2)
IDM
24.8
A
310
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
TO-220/TO-220F1
40
W
Power Dissipation
PD
TO-251S/TO-251S2/
55
W
TO-251S4
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 17mH, IAS = 6A, VDD = 90V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F1
Junction to Ambient
TO-251S/TO-251S2/
TO-251S4
TO-220/TO-220F1
Junction to Case
TO-251S/TO-251S2/
TO-251S4
SYMBOL
UNISONIC TECHNOLOGIES CO., LTD
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θJA
θJC
RATING
62.5
UNIT
°C/W
110
°C/W
3.2
°C/W
2.27
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNI
T
BVDSS
VGS=0V, ID=250μA
600
V
VDS=600V, VGS=0V
10
μA
Drain-Source Leakage Current
IDSS
VDS=480V, VGS=0V, TJ =125°C
100 μA
Forward
VGS=30V, VDS=0V
100 nA
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
-100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3.1A
1.1 1.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
650
pF
Output Capacitance
COSS
VDS=25V, VGS=0V, f =1.0 MHz
95
pF
Reverse Transfer Capacitance
CRSS
8
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
54
ns
Turn-On Rise Time
tR
46
ns
VDD=30V, ID=1.0A, RG=25Ω
(Note 1, 2)
Turn-Off Delay Time
tD(OFF)
180
ns
Turn-Off Fall Time
tF
56
ns
25
nC
Total Gate Charge
QG
VDS=50V, ID=1.3A, VGS=10 V
Gate-Source Charge
QGS
6.6
nC
(Note 1, 2)
Gate-Drain Charge
QGD
4.9
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0 V, IS=6.2 A
1.4
V
Maximum Continuous Drain-Source Diode
IS
6.2
A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
24.8 A
Forward Current
Reverse Recovery Time
trr
290
ns
VGS=0 V, IS=6.2 A,
dIF/dt=100 A/μs (Note 1)
Reverse Recovery Charge
QRR
2.35
μC
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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