Datasheet

UNISONIC TECHNOLOGIES CO., LTD
12N25V
Power MOSFET
12A, 250V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 12N25V is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 12N25V is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.

FEATURES
* ID=12A
* VDS = 250V
* RDS(ON)<0.5Ω @ VGS=10V, ID=12A
* High switching speed
* 100% avalanche tested

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N25VL-TA3-T
12N25VG-TA3-T
12N25VL-TN3-R
12N25VG-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
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12N25V

Power MOSFET
MARKING
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12N25V

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
RATINGS
UNIT
250
V
±20
V
Continuous (TC=25°C)
12
A
Drain Current
Pulsed (Note 2)
48
A
Single Pulsed Avalanche Energy
474
mJ
Peak Diode Recovery dv/dt
7.5
V/ns
TO-220
73
W
Power Dissipation
PD
TO-252
83
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Drain-Source Voltage
Gate-Source Voltage

THERMAL DATA
Junction to Ambient
Junction to Case

SYMBOL
VDSS
VGSS
ID
IDM
EAS
dv/dt
PARAMETER
TO-220
TO-252
TO-220
TO-252
SYMBOL
θJA
θJC
RATINGS
62.5
100
1.7
1.5
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
250
V
Drain-Source Leakage Current
IDSS
VDS=250V, VGS=0V
1
µA
Forward
VGS=+20V, VDS=0V
+100 nA
Gate- Source Leakage Current
IGSS
-100 nA
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.0
2.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=12A
0.34 0.5
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
3000
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
900
pF
Reverse Transfer Capacitance
CRSS
400
6
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
14
ns
Rise Time
tR
80
ns
VDD=200V, ID=12A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
90
ns
80
ns
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
12
A
Maximum Body-Diode Pulsed Current
ISM
48
A
Drain-Source Diode Forward Voltage
VSD
IS=12A, VGS=0V
1.4
V
Reverse Recovery Time
trr
210
ns
IS=12A, VGS=0V, dIF/dt=100A/μs
Reverse Recovery Charge
Qrr
1.5
μC
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
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12N25V

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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12N25V

Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
90%
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)

200
150
100
200
150
100
50
50
0
0
0
0.5
1
2.5 3 3.5
1.5
2
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Drain Current, ID (A)
0
75
225
300
375
150
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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