UNISONIC TECHNOLOGIES CO., LTD 4N40 Power MOSFET 4A, 400V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 4N40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply. FEATURES * High switching speed * RDS(ON)<1.5Ω @ VGS=10V, ID=2A * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N40L-TA3-T 4N40G-TA3-T 4N40L-TF3-T 4N40G-TF3-T 4N40L-TM3-T 4N40G-TM3-T 4N40L-TMS-T 4N40G-TMS-T 4N40L-TN3-R 4N40G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-251 TO-251S TO-252 1 G G G G G Pin Assignment 2 3 D S D S D S D S D S Packing Tube Tube Tube Tube Tape Reel 1 of 5 QW-R502-550.D 4N40 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-550.D 4N40 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Continuous (TC=25°C) ID 4 A Drain Current Pulsed (Note 1) IDM 8 A Avalanche Energy Single Pulsed (Note 3) EAS 140 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns 60 W TO-220 Power Dissipation TO-220F 27 W TO-251/TO-251S/TO-252 52 W PD TO-220 0.48 W/°C Derate above 25°C TO-220F 0.22 W/°C TO-251/TO-252 0.41 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L=18mH, IAS=4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F Junction to Ambient TO-251/TO-251S/TO-252 TO-220 Junction to Case TO-220F TO-251/TO-251S/TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 110 2.08 4.5 2.4 UNIT °C/W °C/W 3 of 5 QW-R502-550.D 4N40 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current Gate- Source Leakage Current IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=400V, VGS=0V VDS=320V, TC=125°С VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, RG=25Ω Turn-OFF Delay Time tD(OFF) (Note 2, 3) Fall-Time tF Total Gate Charge QG VDD=50V, ID=1.3A, VGS=10V, IG=100µA Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=4A, VGS=0V Body Diode Reverse Recovery Time trr IS=4A, VGS=0V, dIF/dt=100A/µs(Note 2) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 3. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX 400 2.0 UNI T 1 100 +100 -100 V µA µA nA nA 4.0 1.8 V Ω 315 120 40 pF pF pF 30 60 100 68 18.5 4.5 5.5 ns ns ns ns nC nC nC 30 1.4 800 V ns 4 of 5 QW-R502-550.D 4N40 Power MOSFET TEST CIRCUITS AND WAVEFORMS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-550.D