TRANSISTOR MODULE QCA200AA100 UL;E76102 （M） QCA200AA100 is a dual Darlington power transistor module with has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. 113max C2E1 C 15 27 E2 B2 3-M6 B1 E1 E2 B1X High DC current gain hFE monuting base 4ｰφ6.5 B2X VCEX=1000V ● Low saturation voltage for higher efficiency 90max. 70±0.2 ● IC=200A, ● 93±0.2 25 25 31.5 ● Isolated B2X B2 E2 34.5 C1 C2E1 NAME PLATE E1 B1 B1X ■Maximum Ratings Symbol Tab＃110 t =0.5 E2 31max. （Applications） Motor Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit：A （Tj＝25℃ unless otherwise specified） Item Conditions Ratings Unit QCA200AA100 VCBO Collector-Base Voltage Emitter open 1000 V VCEX Collector-Emitter Voltage VBE＝−2V 1000 V IC＝40A，IB2＝−5A 1000 V 10 V Collector Current 200 A Reverse Collector Current 200 A 10 A VCEX（SUS） Collector-Emitter Sustaning Voltage VEBO IC −IC Emitterr-Base Voltage Collector open IB Base Current PC Collector-Emitter power dissipation Tj Junction Temperature Tstg Storage Temperature VISO Isolation Voltage(RMS) A.C. 1minute Mounting Torque（M6） Recommended Value 2.5-3.9（25-40） Mass Typical Value TC＝25℃ 1560 W −40 to 150 ℃ −40 to 125 ℃ 2500 V 4.7（48） N･m (㎏f･B) 675 g ■Electrical Characteristics Symbol Item Conditions ICBO Collector Cut-off Current VCB＝1000V Emitter open IEBO Emitter Cut-off Current VEB＝10V Collector open hFE Ic＝200A，VCE＝2.8V D.C. Current Gain Ic＝200A，VCE＝5V Ratings Min. Max Unit 4.00 mA 500 mA 75 100 VCE(sat) Collector-Emitter Sturation Voltage Ic＝200A，IB＝4A 2.5 V VBE(sat) ton Base-Emitter Saturation Voltage Ic＝200A，IB＝4A 3.5 V tstg On Time Switching Time tf VECO Rth(j-c) Storage Time Fall Tjme Collector-Emitter Reverse Voltage (Diode forward voltage drop) Thermal Impedance (Junction to case) SanRex 3.0 Vcc＝600V，Ic＝200A IB1＝4A，IB2＝−4A 15.0 μs 3.0 −Ic＝200A 1.8 Transistor part 0.08 Diode part 0.35 V ℃/W ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] QCA200AA100 D.C. Current Gain VCE 5V VCE 2.8V Typical DC Current Gain hFE １０００ ５００ Tj 125℃ ２００ Tj 25℃ １００ ５０ ２０ １ ２ １０ ５ ２０ ５０ １００ ２００ Collector-Emitter Voltage VＣＥ （V） Base-Emitter Voltage VBE（V） ２０００ Saturation Characteristics １０１ Typical Tj 25℃ Tj 125℃ ５ vBE(sat) ２ vCE(sat) ０ １０ ５ ５００ １００ ２ 50 μ s Pulse Wide １０3 ５ ２ Tj 25℃ Non-Repetitive Single pulse ５ ２ ３００ I B2 I B2 ２５０ ５ １０３ １００ Tj 25℃ ０ ０ Collector Reverse Current -Ic（A） Derating Factor（%） Second Breakdown Limit Thermal Limit １００ ５ Typical Tj 25℃ ２ tf ton IB1 IB2 4A −4A Vcc 600V １０-１ ５ ０ １２００ Forward Voltage of Free Wheeling Diode ５ Tj 25℃ Tj 125℃ ２ １０１ ５ ２ １ ２ ２ Transient Thermal Impedance 100msec∼100sec ５ Maximum Transistor Part ２ １０-２ １００ ５ １０００ １０２ １０-１ ts ２ ８００ Emitter-Collector Voltage VECO（V） Collector Current Vs Switching Time ５ ６００ １００ ０ １５０ Transient Thermal Impedance θj-c（℃/W） Switching Time ton tf ts（μs） ２ ４００ ２ Case Temperature（℃） １０１ ２００ Collector-Emitter Voltage VCE（V） Collector Current Derating Factor ５０ −4A −8A １５０ ２ １００ ０ ０ ５ ２００ Collector-Emitter Voltage VCE（V） ５０ ２ ４００ ５０ １０２ １０２ ３５０ ２ １０１ ５ ５ Reverse Bias Safe Operating Area Collector Current Ic（A） Collector Current Ic（A） 10 20 0μs 0μ s １０２ ２ Collector Current Ic（A） Forward Bias Safe Operating Area ２ １０１ ５ Collector Current Ic（A） ５ 4.0A IB １００ Collector Current Ic（A） ２００ ５ 200μec∼100msec ２ １０-３ ５ ２ １０-１ ２ ５ １０-３ ２ ５ １００ ２ ５ １０-２ ２ ５ １０１ ２ ５ １０-１ ５ １０２ Time t（sec） SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]