UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640-P suitable for resonant and PWM converter topologies. 1 TO-220 FEATURES * RDS(ON) =0.18Ω@ VGS=10V, ID=10A * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (CRSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen-Free UF640L-TA3-T UF640G-TA3-T www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 5 QW-R502-Q17.A UF640-P Power MOSFET ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 200 V Drain-Gate Voltage (RGS=20kΩ) VDGR 200 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 18 A Pulsed Drain Current (Note 2) IDM 72 A Single Pulse Avalanche Energy Rating (Note 2) EAS 580 mJ Maximum Power Dissipation PD 123 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L=3.37mH, VDD=50V, RG=25Ω, peak IAS=18A, starting TJ=25°C. 3. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 62.5 1.01 UNIT °C/W °C/W 2 of 5 QW-R502-A17.A UF640-P Power MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Turn-ON Delay Time Turn-ON Rise Time Turn-OFF Delay Time Turn-OFF Fall-Time Total Gate Charge SYMBOL BVDSS IDSS IGSS VGS(THR) RDS(ON) TEST CONDITIONS MIN ID=250μA, VGS=0V VDS = Rated BVDSS, VGS = 0V VGS= ±20V 200 VGS=VDS, ID=250μA VGS=10V, ID=10A TYP 2 0.13 25 ±100 V μA nA 4 0.17 V Ω CISS COSS CRSS VDS=25V, VGS=0V, f=1MHz 805 240 46 tD(ON) tR tD(OFF) tF VDD=100V,ID≈18A, RG=9.1Ω,RL=5.4Ω, MOSFET Switching Times are Essentially Independent of Operating Temperature 26 46 300 97 40 70 350 120 ns ns ns ns QG(TOT) VGS=10V, ID≈18A, VDS=0.8 x Rated BVDSS Gate Charge is Essentially Independent of Operating Temperature IG(REF) = 1.5mA 34 55 nC Gate Source Charge QGS Gate Drain Charge QGD ISM pF pF pF 5.5 nC 6.6 nC SOURCE TO DRAIN DIODE SPECIFICATIONS Diode Forward Voltage (Note) VSD TJ=25°C, IS=18A, VGS=0V, Integral Reverse p-n Junction Continuous Source Current IS Diode in the MOSFET (body diode) Drain Pulse Source Current (body diode) (Note) MAX UNIT Gate 2.0 V 18 A 72 A 530 5.6 ns μC Sourse Reverse Recovery Time trr TJ=25°C, IS=18A, dIS/dt=100A/μs Reverse Recovery Charge QRR TJ=25°C, IS=18A, dIS/dt=100A/μs Note: Pulse Test: Pulse width ≤ 300μs, duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 120 1.3 240 2.8 3 of 5 QW-R502-A17.A UF640-P Power MOSFET TEST CIRCUIT VDS RL 10% 0 RG VDD VGS 90% D.U.T. 90% VGS 50% 10% 0 tD(ON) tON Fig.3 Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR PULSE WIDTH 50% tD(OFF) tF tOFF Fig.4 Resistive Switching Waveforms 4 of 5 QW-R502-A17.A UF640-P Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-A17.A