UTC-IC UF640

UNISONIC TECHNOLOGIES CO., LTD
UF640
MOSFET
18 A, 200 V, 0.18 OHM,
N-CHANNEL POWER MOSFET
1
DESCRIPTION
These kinds of n-channel power mos field effect transistor have
low conduction power loss, high input impedance, and high
switching speed, Linear Transfer Characteristics, so can be use in
a variety of power conversion applications.
The UF640 suitable for resonant and PWM converter topologies.
TO-220
1
FEATURES
TO-220F
* RDS(ON) =0.18Ω@VGS = 10V.
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (CRSS = typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
*Pb-free plating product number: UF640L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
UF640-TA3-T
UF640L-TA3-T
UF640-TF3-T
UF640L-TF3-T
Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
UF640L-TA3-T
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TA3: TO-220, TF3: TO-220F
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 5
Ver.A
UF640
MOSFET
ABSOLUTE MAXIMUM RATING (TC = 25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Drain-Gate Voltage (RGS = 20kΩ)
Gate-Source Voltage
SYMBOL
VDSS
VDGR
VGSS
RATINGS
UNIT
200
V
200
V
±20
V
TC = 25℃
18
A
Continuous Drain Current
ID
TC = 100℃
11
A
Pulsed Drain Current (Note 2)
IDM
72
A
Single Pulse Avalanche Energy Rating (Note 3)
EAS
580
mJ
Maximum Power Dissipation
125
W
PD
W/℃
Dissipation Derating Factor
1.0
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Channel to Ambient
Thermal Resistance, Channel to Case
SYMBOL
θJA
θJC
MIN
TYP
MAX
62
1
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
On-State Drain Current
Gate-Source Leakage Current
Drain-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate-Source Charge
Gate-Drain “Miller” Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
TEST CONDITIONS
BVDSS ID = 250µA, VGS = 0V
VGS(THR) VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
IDSS
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TJ = 125℃
ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS = 10V
IGSS
VGS = ±20V
RDS(ON) ID = 10A, VGS = 10V
gFS
VDS ≥ 10V, ID = 11A
CISS
COSS VDS = 25V, VGS = 0V, f = 1MHz
CRSS
VGS = 10V, ID ≈ 18A, VDS = 0.8 x
QG(TOT)
Rated BVDSS Gate Charge is
Essentially Independent of
QGS
Operating Temperature IG(REF) =
QGD
1.5mA
tD(ON) VDD = 100V, ID ≈ 18A, RGS = 9.1Ω,
RL = 5.4Ω,
tR
t D(OFF) MOSFET Switching Times are
Essentially Independent of
tF
Operating Temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
200
2
TYP
MAX UNIT
V
4
V
25
µA
250
µA
18
6.7
0.14
10
1275
400
100
43
±100
0.18
64
A
nA
Ω
S
pF
pF
pF
nC
8
nC
22
nC
13
50
46
21
77
68
ns
ns
ns
35
54
ns
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Ver.A
UF640
MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
TEST CONDITIONS
MIN
Measured
From the
Contact Screw
on Tab to
Center of Die Modified MOSFET Symbol
Internal Drain Inductance
LD
Showing the Internal
Measured
From the Drain Devices Inductances
Lead, 6mm
D
(0.25in) From
Package to
LD
Center of Die
G
Measured
LS
From the
S
Source Lead,
6mm (0.25in)
Internal Source Inductance
LS
from Header to
Source
Bonding Pad
SOURCE TO DRAIN DIODE SPECIFICATIONS
Diode Forward Voltage (Note 1)
VSD
TJ = 25℃, IS = 18A, VGS = 0V,
Continuous Source Current (body
Integral Reverse p-n Junction
IS
diode)
Diode in the MOSFET
Drain
Pulse Source Current (body diode)
(Note 1)
SYMBOL
ISM
Gate
TYP
MAX UNIT
3.5
nH
4.5
nH
7.5
nH
2.0
V
18
A
72
A
Sourse
TJ = 25℃, IS = 18A,
120
240
530
ns
Reverse Recovery Time
tRR
dIS/dt = 100A/µs
TJ = 25℃, IS = 18A,
1.3
2.8
5.6
µC
Reverse Recovery Charge
QRR
dIS/dt = 100A/µs
Note 1. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance
curve.
3. L = 3.37mH, VDD = 50V, RG = 25Ω, peak IAS = 18A, starting TJ = 25℃.
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www.unisonic.com.tw
3 of 5
Ver.A
UF640
MOSFET
TEST CIRCUIT
VDS
BVDSS
L
RG
VDS
VDD
IAS
VDD
D.U.T.
0
0.01Ω
tp
tAV
IAS
Figure 1A. Unclamped Energy Test Circuit
Figure 1B. Unclamped Energy Waveforms
VDS
90%
RL
10%
0
RG
90%
VDD
VGS
D.U.T.
VGS
50%
10%
0
tD(ON)
50%
PULSE WIDTH
tR
t D(OFF) t F
t OFF
tON
Figure 2B. Resistive Switching Waveforms
Figure 2A. Switching Time Test Circuit
VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
12V
BATTERY
VDD
SAME TYPE
AS DUT
50kΩ
Q G(TOT)
QGS
0.3µF
0.2µF
Q GD
VGS
D
VDS
DUT
G
0
IG(REF)
IG CURRENT
SAMPLING
RESISTOR
S
IG(REF)
I D CURRENT
SAMPLING
RESISTOR
Figure 3A. Gate Charge Test Circuit
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0
0
Figure 3B. Gate Charge Waveforms
4 of 5
Ver.A
UF640
MOSFET
TYPICAL CHARACTERISTICS
30
Pulse Duration = 80µs
Duty Cycle = 0.5% MAX
Drain Current, ID (A)
24
18
VGS =6V
12
6
0
0
1.0
2.0
5.0
3.0
4.0
Drain to Source Voltage, VDS (V)
Drain to Source on Resistance
R DS(ON) (Ω)
Saturation Characteristics
Drain to Source On Resistance vs. Gate
Voltage And Drain Current
1.5
Pulse Duration = 80µs
Duty Cycle = 0.5% Max
1.2
0.8
0.6
VGS =10V
0.3
0
0
45
60
15
30
Drain Current, ID (A)
75
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Ver.A