UNISONIC TECHNOLOGIES CO., LTD
18T10
Preliminary
Power MOSFET
9A, 100V N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
DESCRIPTION
The UTC 18T10 is an N-channel enhancement mode Power
MOSFET, it uses UTC’s advanced technology to provide the
customers with a minimum on state resistance, high switching speed
and low gate charge, etc.
The UTC 18T10 is suitable for low voltage applications such as
DC/DC converters, etc.
FEATURES
* RDS(ON)<0.16Ω @ VGS=10V
* High switching speed
* Low gate charge
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
18T10L-TN3-T
18T10G-TN3-T
18T10L-TN3-R
18T10G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
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18T10
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
9
A
Continuous TC=25°C
ID
VGS @ 10V TC=100°C
Drain Current
5.6
A
Pulsed (Note 1)
IDM
30
A
TC=25°C
27.8
W
Total Power Dissipation
PD
TA=25°C
1.3
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
110
4.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=80V, VGS=0V
VDS=80V, VGS=0V, TJ=125°C
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
VGS=10V, ID=5A
Static Drain-Source On-State Resistance
RDS(ON)
(Note 3)
VGS=4.5V, ID=1A
Forward Transconductance
gFS
VDS=10V, ID=5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 3)
QG
VGS=4.5V, VDS=80V, ID=5A
Gate to Source Charge
QGS
Gate to Drain ("Miller") Charge
QGD
Turn-ON Delay Time (Note 3)
tD(ON)
Rise Time
tR
VDS=30V, ID=0.5A, RG=25Ω,
V
Turn-OFF Delay Time
tD(OFF)
GS=10V
Fall-Time
tF
SOURCE- DRAIN DIODE
Forward On Voltage (Note 3)
VSD
IS=5A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse test.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
100
25
250
+100
-100
1
V
µA
µA
nA
nA
3
160
440
V
mΩ
mΩ
S
400
55
35
640
pF
pF
pF
23
5.25
5.5
33
28
160
45
50
nC
nC
nC
ns
ns
ns
ns
1.3
V
5
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VER.a
18T10
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(ON)
tR
tON
td(OFF) tF
tOFF
Resistive Switching Waveforms
Charge
Gate Charge Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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