UNISONIC TECHNOLOGIES CO., LTD 4N30Z Power MOSFET 4A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N30Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON)<2Ω @ VGS=10V, ID=4A * High switching speed * Typically 3.2nC low gate charge * 100% avalanche tested * Enhanced ESD capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N30ZL-TN3-R 4N30ZG-TN3-R 4N30ZL-TN3-T 4N30ZG-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 3 QW-R502-849.A 4N30Z Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 300 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 4 A Avalanche Current IAR 4 A Single Pulsed EAS 52 mJ Avalanche Energy Repetitive EAR 52 mJ Power Dissipation PD 1.14 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VDS=0V Drain-Source Leakage Current IDSS VDS=300V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDD=50V, ID=4A, IG=100µA, Gate to Source Charge QGS VGS=10V Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=4A, RG=25Ω, VGS=0~10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=4A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 300 2 1 ±10 ±10 V µA µA µA 4 2 V Ω 850 250 200 pF pF pF 3.2 0.64 1.6 6 38 11 13 0.1 nC nC nC ns ns ns ns 4 16 1.48 A A V 2 of 3 VER.A 4N30Z Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) Drain Current, ID (µA) Drain Current, ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-849.A