UNISONIC TECHNOLOGIES CO., LTD UTM6016 Power MOSFET 8A, 60V N-CHANNEL FAST SWITCHING MOSFET DESCRIPTION The UTC UTM6016 is an N-Channel MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UTM6016 is suitable for application in networking DC-DC power system and LCD/LED back light, etc. FEATURES SOP-8 1 * RDS(ON) < 12 mΩ @ VGS = 10V, ID=8A RDS(ON) < 15 mΩ @ VGS = 4.5V, ID=6A * Low gate charge * Excellent CdV/dt effect decline * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Note: UTM6016G-S08-R UTM6016G-K08-5060-R Pin Assignment: G: Gate DFN-8(5x6) Package SOP-8 DFN-8(5×6) D: Drain S: Source 1 S S 2 S S Pin Assignment 3 4 5 6 S G D D S G D D 7 D D 8 D D Packing Tape Reel Tape Reel MARKING SOP-8 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd DFN-8(5×6) 1 of 6 QW-R502-A76.D UTM6016 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous VGS @ 10V (Note 1) Drain Current RATINGS UNIT 60 V ±20 V TA=25°C 8 A ID 6.4 A TA=70°C 32 A Pulsed (Note 2) IDM Avalanche Current IAS 38 A Single Pulse Avalanche Energy (Note 3) EAS 123 mJ SOP-8 1.5 W Power Dissipation (TA=25°C) (Note 4) PD DFN-8(5×6) 1.92 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL CHARACTERISTICS (Note 1) PARAMETER RATINGS SOP-8 85 Junction to Ambient θJA DFN-8(5×6) 65 SOP-8 24 Junction to Case θJC DFN-8(5×6) 12 Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=3.85mH, IAS=8A. 4. The power dissipation is limited by 150°C junction temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL UNIT °C/W °C/W 2 of 6 QW-R502-A76.D UTM6016 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS ID=250µA, VGS=0V △BVDSS/△TJ Reference to 25°C , ID=1mA VDS=48V, VGS=0V, TJ=25°C IDSS VDS=48V, VGS=0V, TJ=55°C Forward VGS=+20V, VDS=0V IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Temperature Coefficient Static Drain-Source On-State Resistance (Note 2) VGS(TH) △VGS(TH) RDS(ON) VDS=VGS, ID=250µA VGS=10V, ID=8A VGS=4.5V, ID=6A VDS=5V, ID=8A MIN TYP 60 0.052 1.2 MAX UNIT V V/°C 1 µA 5 µA +100 nA -100 nA 2.5 -5.76 10 12 45 mV/°C 12 15 Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS 1070 1200 VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS 200 220 190 210 Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) Total Gate Charge (4.5V) QG 290 310 =10V, V =48V, I =1A V Gate to Source Charge QGS 10.7 15 GS DS D 30 45 Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) 55 70 Rise Time tR 100 120 VGS=10V, VDD=30V, RG=3.3Ω, ID=2A Turn-OFF Delay Time tD(OFF) 580 620 Fall-Time tF 190 210 GUARANTEED AVALANCHE CHARACTERISTICS Single Pulse Avalanche Energy (Note 5) EAS VDD=25V, L=0.1mH, IAS=30A 77 DIODE CHARACTERISTICS Continuous Source Current (Note 1, 6) IS 8 VG=VD=0V , Force Current 32 Pulsed Source Current (Note 2, 6) ISM Diode Forward Voltage (Note 2) VSD VGS=0V , IS=8A , TJ=25°C 1.2 Reverse Recovery Time trr 18 IF=8A, dI/dt=100A/μs, TJ=25°C Reverse Recovery Charge Qrr 15.6 Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed, pulse width≤300µs, duty cycle≤2%. 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=30A. 4. The power dissipation is limited by 150°C junction temperature. 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns mJ A A V nS nC 3 of 6 QW-R502-A76.D UTM6016 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-A76.D UTM6016 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-A76.D UTM6016 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-A76.D