Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UNA03R050M
Power MOSFET
22A, 30V N-CHANNEL
POWERTRENCH SYNCFET

DESCRIPTION
1
The UTC UNA03R050M is an N-channel MOSFET, it uses UTC’s
advanced technology to provide the customers with a minimum on
state resistance, etc.
The UTC UNA03R050M is suitable for synchronous rectifier for
DC/DC converters, Notebook Vcore/GPU low side switch and
telecom secondary side rectification, etc.

DFN-8(5x6)
FEATURES
* RDS(ON) < 5.0mΩ @ VGS=10V, ID=18A
RDS(ON) < 6.2mΩ @ VGS=4.5V, ID=16A
* High efficiency
* Low RDS(ON)

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UNA03R050MG-K08-5060-R
Pin Assignment: G: Gate
D: Drain
Package
DFN-8(5×6)
1
S
2
S
Pin Assignment
3 4 5 6 7 8
S G D D D D
Packing
Tape Reel
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage (Note 3)
VGSS
±20
V
Continuous (Package limited)
22
A
TC=25 °C
Continuous (Silicon limited)
70
A
Drain Current
ID
TC=25 °C
Continuous TA=25°C
18
A
(Note 1)
Pulsed
100
A
Single Pulse Avalanche Energy (Note 2)
EAS
33
mJ
TC=25 °C
36
W
PD
Power Dissipation
TA=25°C (Note 1)
2.5
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. L=0.85mH, IAS=21A, VDD=50V, RG=25Ω, Starting TJ = 25°C
4. ISD ≤ 18A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1)
θJA
50
°C/W
Junction-to-Case
θJC
3.4
°C/W
Notes: 1. θJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4
material. θJC is guaranteed by design while θCA is determined by the user's board design.
2 L=0.3mH, IAS=14A, VDD=27V, VGS=10V, Starting TJ = 25°C
3 As an N-ch device, the negative VGS rating is for low duty cycle pulse occurrence only. No continuous rating
is implied.
UNISONIC TECHNOLOGIES CO., LTD
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current Forward
ON CHARACTERISTICS
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Static Drain-Source On-State Resistance
SYMBOL
BVDSS
∆BVDSS
∆TJ
TEST CONDITIONS
ID=1mA, VGS=0V
VDS=24V, VGS=0V
VGS=20V, VDS=0V
VGS(TH)
∆BVGS( TH)
VDS=VGS, ID=1mA
RDS(ON)
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V
mV/°
C
18
1.2
1.5
ID=10mA, Referenced to 25°C
-4
VGS=10V, ID=18A
VGS=4.5V, ID=16A
VGS=10V, ID=18A, TJ=125°C
4.2
5.4
5.3
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS= 30V, ID= 0.5A,
Gate to Source Charge
QGS
VGS= 10 V (Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD = 30V, ID = 0.5A,
Rise Time
tR
RG = 25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
VGS=0V, IS=2A (Note 2)
Source to Drain Diode Forward Voltage
VSD
VGS=0V, IS=18A (Note 2)
Reverse Recovery Time
trr
IF=18A, di/dt=100A/µs
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
30
ID=10mA, Referenced to 25°C
IDSS
IGSS
∆TJ
MIN TYP MAX UNIT
500
100
µA
nA
3.0
V
mV/°
C
5.0
6.2
6.8
mΩ
mΩ
mΩ
420
300
3.8
pF
pF
pF
260
12
16
64
120
760
430
nC
nC
nC
ns
ns
ns
ns
0.63
0.8
23
20
0.8
1.2
36
32
V
V
ns
nC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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