UNISONIC TECHNOLOGIES CO., LTD Preliminary UNA03R050M Power MOSFET 22A, 30V N-CHANNEL POWERTRENCH SYNCFET DESCRIPTION 1 The UTC UNA03R050M is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, etc. The UTC UNA03R050M is suitable for synchronous rectifier for DC/DC converters, Notebook Vcore/GPU low side switch and telecom secondary side rectification, etc. DFN-8(5x6) FEATURES * RDS(ON) < 5.0mΩ @ VGS=10V, ID=18A RDS(ON) < 6.2mΩ @ VGS=4.5V, ID=16A * High efficiency * Low RDS(ON) SYMBOL ORDERING INFORMATION Ordering Number Note: UNA03R050MG-K08-5060-R Pin Assignment: G: Gate D: Drain Package DFN-8(5×6) 1 S 2 S Pin Assignment 3 4 5 6 7 8 S G D D D D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R209-092.a UNA03R050M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage (Note 3) VGSS ±20 V Continuous (Package limited) 22 A TC=25 °C Continuous (Silicon limited) 70 A Drain Current ID TC=25 °C Continuous TA=25°C 18 A (Note 1) Pulsed 100 A Single Pulse Avalanche Energy (Note 2) EAS 33 mJ TC=25 °C 36 W PD Power Dissipation TA=25°C (Note 1) 2.5 W Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. L=0.85mH, IAS=21A, VDD=50V, RG=25Ω, Starting TJ = 25°C 4. ISD ≤ 18A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 1) θJA 50 °C/W Junction-to-Case θJC 3.4 °C/W Notes: 1. θJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. θJC is guaranteed by design while θCA is determined by the user's board design. 2 L=0.3mH, IAS=14A, VDD=27V, VGS=10V, Starting TJ = 25°C 3 As an N-ch device, the negative VGS rating is for low duty cycle pulse occurrence only. No continuous rating is implied. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R209-092.a UNA03R050M Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Forward ON CHARACTERISTICS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-State Resistance SYMBOL BVDSS ∆BVDSS ∆TJ TEST CONDITIONS ID=1mA, VGS=0V VDS=24V, VGS=0V VGS=20V, VDS=0V VGS(TH) ∆BVGS( TH) VDS=VGS, ID=1mA RDS(ON) www.unisonic.com.tw V mV/° C 18 1.2 1.5 ID=10mA, Referenced to 25°C -4 VGS=10V, ID=18A VGS=4.5V, ID=16A VGS=10V, ID=18A, TJ=125°C 4.2 5.4 5.3 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS= 30V, ID= 0.5A, Gate to Source Charge QGS VGS= 10 V (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD = 30V, ID = 0.5A, Rise Time tR RG = 25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS VGS=0V, IS=2A (Note 2) Source to Drain Diode Forward Voltage VSD VGS=0V, IS=18A (Note 2) Reverse Recovery Time trr IF=18A, di/dt=100A/µs Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD 30 ID=10mA, Referenced to 25°C IDSS IGSS ∆TJ MIN TYP MAX UNIT 500 100 µA nA 3.0 V mV/° C 5.0 6.2 6.8 mΩ mΩ mΩ 420 300 3.8 pF pF pF 260 12 16 64 120 760 430 nC nC nC ns ns ns ns 0.63 0.8 23 20 0.8 1.2 36 32 V V ns nC 3 of 6 QW-R209-092.a UNA03R050M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R209-092.a UNA03R050M Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R209-092.a UNA03R050M Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R209-092.a