UNISONIC TECHNOLOGIES CO., LTD Preliminary UNA06R460H Power MOSFET 20A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UNA06R460H is N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance . It also can with stand high energy pulse in the avalanche and commutation mode, etc. The UTC UNA06R460H is universally applied in low voltage, such as automotive, high efficiency switching for DC/DC converters and DC motor control, etc. FEATURES * RDS(ON) < 46mΩ @ VGS=10V, ID=20A * High power and current handling capability * High speed switching SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UNA06R460HL-TN3-T UNA06R460HG-TN3-T UNA06R460HL-TND-T UNA06R460HG-TND-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-128.b UNA06R460H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±16 V Continuous TC=25°C ID 20 A Drain Current Pulsed (Note 2) IDM 80 A Single Pulsed Avalanche Energy (Note 3) EAS 27 mJ Power Dissipation PD 1.13 W Peak Diode Recovery dv/dt dv/dt 1.96 V/ns Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 0.85mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 20A, di/dt ≤ 100A/µs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 110 2.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=60V, VGS=0V VDS=48V, VGS=0V, TC=125°C VGS=+16V, VDS=0V VGS=-16V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, VGS=10V, ID=0.5A, Rise Time tR RG =25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=20A, VGS=0V Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Body Diode Reverse Recovery Time tRR IS=20A, dIS/dt=100A/µs Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 2.0 1 10 +100 -100 V µA µA nA nA 4.0 46 V mΩ 690 58 32 pF pF pF 46 6 6 60 35 80 29 nC nC nC ns ns ns ns 1.2 20 80 80 62 V A A ns nC 2 of 5 QW-R209-128.b UNA06R460H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-128.b UNA06R460H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 5 QW-R209-128.b UNA06R460H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-128.b