KSM640 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Description This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON ID 200V 0.19Ω 180A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-220 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 18 Continuous Drain Current-T=100℃ 11.4 Pulsed Drain Current2 72 EAS Single Pulse Avalanche Energy3 250 PD Power Dissipation4 139 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSM640 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance, Junction to Case1 2.89 RƟJA Thermal Resistance ,Junction to Ambient1 62.5 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSM640 KSM640 TO-220 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 200 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 10 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 2.0 — 4.0 V VDS=10V,ID=6A — 0.145 0.19 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A — 13 — — 1300 1700 — 175 230 — 45 60 — 20 50 — 145 300 — 145 300 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 110 2300 Qg Total Gate Charge — 45 230 Qgs Gate-Source Charge VGS=4.5V, VDS=20V, — 6.5 — Qgd Gate-Drain “Miller” Charge ID=6A — 22 — ns ns ns ns nC nC nC — — 1.5 V — 195 — ns — 1.47 — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSM640 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics Figure 3. Capacitance Characteristics unless otherwise noted Figure 2. Transfer Characteristics Figure 4. On-Resistance Variation vs. Drain Current and Gate Voltage www.kersemi.com 3 KSM640 KERSMI ELECTRONIC CO.,LTD. 200V Figure 5. Gate Charge Characteristics Figure 7.Breakdown Voltage Variation vs. Temperature N-channel MOSFET Figure 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 8.Maximum Safe Operating Area Figure 9. Transient Thermal Response Curve www.kersemi.com 4