Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BF620; BF622
NPN high-voltage transistors
Product data sheet
Supersedes data of 1999 Apr 21
2004 Dec 14
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
FEATURES
PINNING
• Low current (max. 50 mA)
PIN
• High voltage (max. 300 V).
1
emitter
2
collector
3
base
APPLICATIONS
DESCRIPTION
• Video output stages.
DESCRIPTION
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BF621 and BF623.
2
MARKING
3
TYPE NUMBER
MARKING CODE
BF620
DC
BF622
DA
3
2
1
1
sym042
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BF620
BF622
2004 Dec 14
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2
VERSION
SOT89
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
MAX.
UNIT
open emitter
−
300
V
−
250
V
BF620
−
300
V
BF622
−
250
V
BF620
BF622
VCEO
MIN.
collector-emitter voltage
open base
VEBO
emitter-base voltage
−
5
V
IC
collector current (DC)
−
50
mA
ICM
peak collector current
−
100
mA
IBM
peak base current
−
50
mA
Ptot
total power dissipation
note 1
−
0.5
W
note 2
−
0.8
W
note 3
−
1.1
W
open collector
Tamb ≤ 25 °C
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
2004 Dec 14
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
006aaa238
1600
Ptot
(mW)
1200
800
(1)
(2)
(3)
400
0
−75
−25
25
75
125
175
Tamb (°C)
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Dec 14
4
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
CONDITIONS
thermal resistance from junction to
ambient
Rth(j-s)
VALUE
UNIT
note 1
250
K/W
note 2
156
K/W
note 3
113
K/W
30
K/W
in free air
thermal resistance from junction to
soldering point
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
006aaa235
103
Zth
(K/W)
102
(1)
(3)
(2)
(4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; standard footprint.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Dec 14
5
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
006aaa236
103
Zth
(K/W)
(1)
102
(2)
(3)
(4)
(5)
(6)
10
(7)
(8)
(9)
(10)
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa237
103
Zth
(K/W)
102
(1)
(3)
(2)
(4)
(5)
(6)
10
(7)
(8)
(9)
(10)
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
2004 Dec 14
6
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector-base cut-off current
CONDITIONS
MIN.
MAX.
UNIT
IE = 0 A; VCB = 200 V
−
10
nA
IE = 0 A; VCB = 200 V; Tj = 150 °C
−
10
µA
nA
IEBO
emitter-base cut-off current
IC = 0 A; VEB = 5 V
−
50
hFE
DC current gain
IC = 25 mA; VCE = 20 V
50
−
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB = 5 mA
−
600
mV
Cre
feedback capacitance
IC = ic = 0 A; VCE = 30 V; f = 1 MHz
−
1.6
pF
fT
transition frequency
IC = −10 mA; VCE = 10 V; f = 100 MHz
60
−
MHz
2004 Dec 14
7
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
bp3
E
HE
Lp
1
2
3
c
bp2
w M
bp1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp1
bp2
bp3
c
D
E
e
e1
HE
Lp
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
1.2
0.8
0.13
OUTLINE
VERSION
SOT89
2004 Dec 14
REFERENCES
IEC
JEDEC
JEITA
TO-243
SC-62
8
EUROPEAN
PROJECTION
ISSUE DATE
04-08-03
06-03-16
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Dec 14
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/04/pp10
Date of release: 2004 Dec 14
Document order number: 9397 750 13867