DISCRETE SEMICONDUCTORS DATA SHEET ‘ dbook, halfpage M3D109 PXT4401 NPN switching transistor Product data sheet Supersedes data of 1999 Apr 14 2004 Nov 22 NXP Semiconductors Product data sheet NPN switching transistor PXT4401 FEATURES PINNING • High current (max. 600 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Switching and linear amplification in industrial and consumer applications. DESCRIPTION 2 NPN switching transistor in a SOT89 plastic package. PNP complement: PXT4403. 3 3 MARKING 2 1 1 sym042 MARKING CODE(1) TYPE NUMBER PXT4401 *2X Fig.1 Simplified outline (SOT89) and symbol. Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PXT4401 2004 Nov 22 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads 2 VERSION SOT89 NXP Semiconductors Product data sheet NPN switching transistor PXT4401 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 600 mA ICM peak collector current − 800 mA IBM peak base current − 200 mA Ptot total power dissipation note 1 − 0.5 W note 2 − 0.8 W note 3 Tamb ≤ 25 °C − 1.1 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 006aaa238 1600 Ptot (mW) 1200 800 (1) (2) (3) 400 0 −75 −25 25 75 125 175 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves. 2004 Nov 22 3 NXP Semiconductors Product data sheet NPN switching transistor PXT4401 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT note 1 250 K/W note 2 156 K/W note 3 113 K/W 30 K/W in free air thermal resistance from junction to soldering point Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 006aaa235 103 Zth (K/W) 102 (1) (3) (2) (4) (5) (6) (7) 10 (8) (9) (10) 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 22 4 NXP Semiconductors Product data sheet NPN switching transistor PXT4401 006aaa236 103 Zth (K/W) (1) 102 (2) (3) (4) (5) (6) 10 (7) (8) (9) (10) 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 006aaa237 103 Zth (K/W) 102 (1) (3) (2) (4) (5) (6) 10 (7) (8) (9) (10) 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 22 5 NXP Semiconductors Product data sheet NPN switching transistor PXT4401 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current IE = 0 A; VCB = 60 V − 50 nA IEBO emitter-base cut-off current IC = 0 A; VEB = 6 V − 50 nA hFE DC current gain VCE = 1 V; (see Fig.6) 20 − IC = 0.1 mA 20 − IC = 1 mA 40 − IC = 10 mA 80 − IC = 150 mA; note 1 100 300 IC = 500 mA; VCE = 2 V; note 1 40 − VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 − 400 mV IC = 500 mA; IB = 50 mA; note 1 − 750 mV VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA; note 1 − 950 mV IC = 500 mA; IB = 50 mA; note 1 − 1.2 V − 8 pF Cc collector capacitance IE =ie = 0 A; VCB = 5 V; f = 1 MHz Ce emitter capacitance IC =ic = 0 A; VEB = 500 mV; f = 1 MHz − 30 pF fT transition frequency IC = 20 mA; VCE = 10 V; f =100 MHz 250 − MHz − 35 ns − 15 ns Switching times (between 10% and 90% levels); (see Fig.7) ton turn-on time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA td delay time tr rise time − 20 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Nov 22 6 NXP Semiconductors Product data sheet NPN switching transistor PXT4401 MGD811 300 handbook, full pagewidth hFE VCE = 1 V 200 100 0 10−1 1 102 10 Fig.6 DC current gain; typical values. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.7 Test circuit for switching times. 2004 Nov 22 7 oscilloscope IC mA 103 NXP Semiconductors Product data sheet NPN switching transistor PXT4401 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 22 REFERENCES IEC JEDEC JEITA TO-243 SC-62 8 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet NPN switching transistor PXT4401 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Nov 22 9 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp10 Date of release: 2004 Nov 22 Document order number: 9397 750 13898