KSM5210 KERSMI ELECTRONIC CO.,LTD. -100V p-channel MOSEETS Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON ID -100V 0.06Ω -40A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-220 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -40 Continuous Drain Current-T=100℃ -29 Pulsed Drain Current2 -140 EAS Single Pulse Avalanche Energy3 780 PD Power Dissipation4 200 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSM5210 KERSMI ELECTRONIC CO.,LTD. -100V p-channel Symbol Parameter RƟJC Thermal Resistance ,Junction to Case1 RƟJA Thermal Resistance, Junction to Ambient1 MOSEETS Ratings Units 0.75 ℃/W 62 Package Marking and Ordering Information Part NO. Marking Package KSM5210 KSM5210 TO-220 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -100 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 25 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -2.0 — -4.0 V VDS=10V,ID=6A — — 0.06 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A 10 — — — 2700 — — 790 — — 450 — — 17 — — 86 — — 79 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 81 — Qg Total Gate Charge — — 180 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — — 25 Qgd Gate-Drain “Miller” Charge ID=6A — — 97 ns ns ns ns nC nC nC — — -1.6 V — 170 260 ns — 1.2 1.8 nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSM5210 KERSMI ELECTRONIC CO.,LTD. -100V p-channel MOSEETS Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics unless otherwise noted Fig 2. Typical Output Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.kersemi.com 3 KSM5210 KERSMI ELECTRONIC CO.,LTD. -100V p-channel Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage MOSEETS Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4