DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D114 2PB709AW PNP general purpose transistor Product data sheet 2002 Jun 26 NXP Semiconductors Product data sheet PNP general purpose transistor 2PB709AW FEATURES PINNING • High collector current (max. 100 mA) PIN • Low collector-emitter saturation voltage (max. 500 mV). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION 3 handbook, halfpage PNP transistor in an SC-70 (SOT323) plastic package. NPN complement: 2PD601AW 3 1 MARKING 2 MARKING CODE(1) TYPE NUMBER 2PB709AQW N5* 1 2PB709ARW N7* Top view 2PB709ASW N9* Note Fig.1 1. * = p: made in Hong Kong. * = t: made in Malaysia. 2 MAM048 Simplified outline SC-70 (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −45 V VCEO collector-emitter voltage open base − −45 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18”. 2002 Jun 26 2 NXP Semiconductors Product data sheet PNP general purpose transistor 2PB709AW THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 625 K/W note 1 Note 1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. MAX. UNIT IE = 0; VCB = −45 V − −10 nA IE = 0; VCB = −45 V; Tj = 150 °C − −5 μA − −10 nA 2PB709AQW 160 260 2PB709ARW 210 340 collector-base cut-off current IEBO emitter-base cut-off current IC = 0; VEB = −5 V hFE DC current gain IC = −2 mA; VCE = −10 V 290 460 VCEsat collector-emitter saturation voltage 2PB709ASW IC = −100 mA; IB = −10 mA; note 1 − −500 mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 5 pF fT transition frequency IC = −1 mA; VCE = −10 V; f = 100 MHz 60 − MHz 2PB709ARW 70 − MHz 2PB709ASW 80 − MHz 2PB709AQW Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2002 Jun 26 3 NXP Semiconductors Product data sheet PNP general purpose transistor 2PB709AW PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2002 Jun 26 REFERENCES IEC JEDEC EIAJ SC-70 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet PNP general purpose transistor 2PB709AW DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2002 Jun 26 5 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp6 Date of release: 2002 Jun 26 Document order number: 9397 750 09758