Transistors IC SMD Type PNP General Purpose Transistor 2PB709AW Features High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -45 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -6 V Collector current IC -100 mA Peak collector current ICM -200 mA mW Total power dissipation Ptot 200 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 K/W Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current ICBO Testconditons Unit -10 nA -5 ìA -10 nA -500 mV 5 pF IC = 0; VEB = -5 V DC current gain 2PB709AQW 2PB709ARW 2PB709ASW hFE IC = -2 mA; VCE = -10 V 160 210 290 VCE(sat) IC = -100 mA; IB = -10 mA; * Collector capacitance Cc IE = ie = 0; VCB = -10 V; f = 1 MHz Transition frequency 2PB709AQW 2PB709ARW 2PB709ASW fT IC = -1 mA; VCE = -10 V;f = 100 MHz 300 ìs; ä Max IE = 0; VCB = -45 V; Tj = 150 IEBO * Pulse test: tp Typ IE = 0; VCB = -45 V Emitter cut-off current Collector-emitter saturation voltage Min 60 70 80 260 340 460 MHz 0.02. hFE Classification TYPE 2PB709AQW Marking N5 2PB709ARW 2PB709ASW N7 N9 www.kexin.com.cn 1