KEXIN 2PB709AW

Transistors
IC
SMD Type
PNP General Purpose Transistor
2PB709AW
Features
High collector current (max. 100 mA).
Low collector-emitter saturation voltage (max. 500 mV).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-45
V
Collector-emitter voltage
VCEO
-45
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-100
mA
Peak collector current
ICM
-200
mA
mW
Total power dissipation
Ptot
200
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient
Rth j-a
625
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
ICBO
Testconditons
Unit
-10
nA
-5
ìA
-10
nA
-500
mV
5
pF
IC = 0; VEB = -5 V
DC current gain
2PB709AQW
2PB709ARW
2PB709ASW
hFE
IC = -2 mA; VCE = -10 V
160
210
290
VCE(sat) IC = -100 mA; IB = -10 mA; *
Collector capacitance
Cc
IE = ie = 0; VCB = -10 V; f = 1 MHz
Transition frequency
2PB709AQW
2PB709ARW
2PB709ASW
fT
IC = -1 mA; VCE = -10 V;f = 100 MHz
300 ìs; ä
Max
IE = 0; VCB = -45 V; Tj = 150
IEBO
* Pulse test: tp
Typ
IE = 0; VCB = -45 V
Emitter cut-off current
Collector-emitter saturation voltage
Min
60
70
80
260
340
460
MHz
0.02.
hFE Classification
TYPE
2PB709AQW
Marking
N5
2PB709ARW 2PB709ASW
N7
N9
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