IS-1825ASRH, ISL71823ASRH ® Data Sheet September 25, 2008 Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs FN9065.3 Features • Electrically Screened to DSCC SMD # 5962-02511 The single event and total dose hardened IS-1825ASRH and ISL71823ASRH pulse width modulators are designed to be used in high frequency, switching power supplies in either voltage or current-mode configurations. Both designs include a precision voltage reference, a low power start-up circuit, a high frequency oscillator, a wide-band error amplifier and a fast current-limit comparator. The IS-1825ASRH features dual, alternating outputs operating from zero to less than 50% duty-cycle, while the ISL71823ASRH features dual, in-phase outputs operating from zero to less than 100% duty cycle. Constructed with the Intersil Rad-hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are guaranteed and tested for 300krad(Si) total dose performance. • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - Total Dose. . . . . . . . . . . . . . . . . . . . . 300krad(SI) (max) - Latch-up Immune . . . . . . . . . . . . . Dielectrically Isolated - SEU immune . . . . . . . . . . LET = 35MeV/mg/cm2(max) • Oscillator Frequency . . . . . . . . . . . . . . . . . . . .1MHz(max) • High Output Drive Current . . . . . . . . . . . . . . .1A peak(typ) • Low Start-up Current . . . . . . . . . . . . . . . . . . . 300µA(max) • Undervoltage Lockout - Start Threshold . . . . . . . . . . . . . . . . . . . . . . . .8.8V(max) - Stop Threshold . . . . . . . . . . . . . . . . . . . . . . . . 7.6V(min) - Hysteresis. . . . . . . . . . . . . . . . . . . . . . . . . . 300mV(min) • Improved Soft-Start Function Compared with Commercial 1825A/1823A Types • Pulse-by-Pulse Current Limiting Detailed Electrical Specifications for these devices are contained in SMD 5962-02511. A “hot-link” is provided on our website for downloading the SMD. • Latched Overcurrent Comparator with Full Cycle Restart • Programmable Leading Edge Blanking Applications • Voltage or Current-Mode Switching Power Supplies • Control of High Current MOSFET Drivers • Motor Speed and Direction Control Pinouts IS9-1825ASRH, ISL71823ASRHQF (CDFP4-F20 FLATPACK) TOP VIEW IS1-1825ASRH, ISL71823ASRHQD (CDIP2-T16 SBDIP) TOP VIEW INV 1 NON-INV 2 16 VREF NC 1 20 VREF 15 VCC INV 2 19 VCC NON-INV 3 18 OUT B E/A OUT 4 17 PGND CLK/LEB 5 16 VC 14 OUT B E/A OUT 3 CLK/LEB 4 13 VC RT 5 12 PGND RT 6 15 VC CT 6 11 OUT A CT 7 14 PGND RAMP 8 13 OUT A SS 9 12 GND NC 10 11 ILIM/SD 10 GND RAMP 7 9 ILIM/SD SS 8 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002, 2005, 2008. All Rights Reserved All other trademarks mentioned are the property of their respective owners. IS-1825ASRH, ISL71823ASRH Ordering Information INTERNAL MKT. NUMBER ORDERING NUMBER TEMP. RANGE (°C) PACKAGE PKG DWG. # IS0-1825ASRH/SAMPLE IS0-1825ASRH/SAMPLE -50 to +125 5962F0251101V9A IS0-1825ASRH-Q -50 to +125 5962F0251101QEC IS1-1825ASRH-8 -50 to +125 16 Ld SBDIP D16.3 5962F0251101QXC IS9-1825ASRH-8 -50 to +125 20 Ld Flatpack K20.A 5962F0251101VEC IS1-1825ASRH-Q -50 to +125 16 Ld SBDIP D16.3 5962F0251101VXC IS9-1825ASRH-Q -50 to +125 20 Ld Flatpack K20.A IS1-1825ASRH/Proto IS1-1825ASRH/Proto -50 to +125 16 Ld SBDIP D16.3 IS9-1825ASRH/Proto IS9-1825ASRH/Proto -50 to +125 20 Ld Flatpack K20.A 5962F0251102QEC ISL71823ASRHQD -50 to +125 16 Ld SBDIP D16.3 5962F0251102QXC ISL71823ASRHQF -50 to +125 20 Ld Flatpack K20.A 5962F0251102VEC ISL71823ASRHVD -50 to +125 16 Ld SBDIP D16.3 5962F0251102VXC ISL71823ASRHVF -50 to +125 20 Ld Flatpack K20.A ISL71823ASRHD/Proto ISL71823ASRHD/Proto -50 to +125 16 Ld SBDIP D16.3 ISL71823ASRHF/Proto ISL71823ASRHF/Proto -50 to +125 20 Ld Flatpack K20.A Typical Performance Curves 10k 100 C220pF DMAX 90 C1000pF 1k DMAX (%) FREQUENCY (Hz) C470pF C2200pF C4700pF 80 70 100 60 C10nF 10 C22nF 1 10 Rt TIMING RESISTANCE (kΩ) FIGURE 1. OSCILLATOR FREQUENCY vs Rt and Ct 2 100 50 1 10 Rt TIMING RESISTANCE (kΩ) 100 FIGURE 2. MAXIMUM DUTY CYCLE vs Rt FN9065.3 September 25, 2008 IS-1825ASRH, ISL71823ASRH Die Characteristics Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation DIE DIMENSIONS: 4310µm x 5840µm (170 mils x 230 mils) Thickness: 483µm ± 25.4µm (19 mils ± 1 mil) Backside Finish: Silicon INTERFACE MATERIALS ASSEMBLY RELATED INFORMATION Glassivation Substrate Potential: Type: Phosphorus Silicon Glass (PSG) Thickness: 8.0kA ± 1.0kA Unbiased (DI) Top Metallization ADDITIONAL INFORMATION Type: AlSiCu Thickness: 16.0kA ± 2kA Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 585 Metallization Mask Layout IS-1825ASRH/ISL71823ASRH RT CLK/LEB CT E/A OUT RAMP NON-INV INV SS RT ILIM/SD VREF OGND GND VCC OUT A OUT B PGND PGND VC VC Notes: 1. Both the OGND (oscillator ground) and the GND (control circuit ground) pads must be bonded to ground. These pads are both bonded to the GND pin on the packaged devices. 2. All double-sized bond pads must be double bonded for current sharing purposes. All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 3 FN9065.3 September 25, 2008