KSMD10N20 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Description This N-channel MOSFET s use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS 200V 1) 2) 3) 4) RDSON ID 9.6A 0.36Ω Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-252 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 7.6 Continuous Drain Current-T=100℃ 4.8 Pulsed Drain Current2 30.4 EAS Single Pulse Avalanche Energy3 5.1 PD Power Dissipation4 51 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMD10N20 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 2.48 RƟJA Thermal Resistance, Junction to Ambient1 110 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KSMD10N20 KSMD10N20 TO-252 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA 200 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — 1 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA 3.0 — 5.0 V VDS=10V,ID=6A — 0.28 0.36 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A — 6 — — 510 670 — 95 130 — 13 17 — 13 40 — 90 190 — 26 70 On Characteristics VGS(th) RDS(ON) GFS GATE-Source Threshold Voltage Drain-Source On Resistance² Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 50 110 Qg Total Gate Charge — 13.5 18 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 3.8 — Qgd Gate-Drain “Miller” Charge ID=6A — 5.5 — ns ns ns ns nC nC nC — — 1.5 V — 130 — ns — 0.6 — nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMD10N20 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage unless otherwise noted Figure 2. Transfer Characteristics Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature www.kersemi.com 3 KSMD10N20 KERSMI ELECTRONIC CO.,LTD. 200V N-channel MOSFET Figure 5. Capacitance Characteristics Figure 7.Breakdown Voltage Variation vs. Temperature Figure 6. Gate Charge Characteristics Figure 8.Maximum Safe Operating Area Figure 9. Transient Thermal Response Curve www.kersemi.com 4