KMB9520 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) 2) 3) 4) BVDSS RDSON ID -100V 0.60Ω -6.8A Low gate charge. Green device available. Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. TO-263 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -6.8 Continuous Drain Current-T=100℃ -4.8 Pulsed Drain Current2 -27 EAS Single Pulse Avalanche Energy3 300 PD Power Dissipation4 60 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KMB9520 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Symbol Parameter Ratings RƟJC Thermal Resistance ,Junction to Case1 2.5 RƟJA Thermal Resistance, Junction to Ambient1 62 Units ℃/W Package Marking and Ordering Information Part NO. Marking Package KMB9520 KMB9520 TO-263 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -100 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -100 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -2.0 — -4.0 V VDS=10V,ID=6A — — 0.60 VDS=2.5V,ID=5A — — — VDS=5V,ID=12A 2.0 — — — 390 — — 170 — — 45 — — 9.6 — — 29 — — 21 — On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω --S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 25 — Qg Total Gate Charge — — 18 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — — 3.0 Qgd Gate-Drain “Miller” Charge ID=6A — — 9.0 ns ns ns ns nC nC nC — — -6.3 V — 95 200 ns — 0.3 3 0.66 nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/S www.kersemi.com 2 KMB9520 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics unless otherwise noted Fig 2. Typical Output Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.kersemi.com 3 KMB9520 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area VoltagB Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4