Si4511DY Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.0145 at VGS = 10 V 9.6 0.017 at VGS = 4.5 V 8.6 0.033 at VGS = - 4.5 V - 6.2 0.050 at VGS = - 2.5 V -5 • TrenchFET® Power MOSFET Pb-free N-Channel 20 P-Channel - 20 Available APPLICATIONS RoHS* • Level Shift • Load Switch COMPLIANT SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D1 S2 G2 Top View G1 Ordering Information: Si4511DY-T1 Si4511DY-T1-E3 (Lead (Pb)-Free) D2 S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Maximum Power Dissipationa ID IDM IS PD TJ, Tstg N-Channel P-Channel 10 secs Steady 10 secs Steady 20 - 20 ± 16 ± 12 9.6 7.2 - 6.2 - 4.6 7.7 5.8 - 4.9 - 3.7 40 - 40 1.7 0.9 - 1.7 0.9 2 1.1 2 1.1 1.3 0.7 1.3 0.7 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 sec Steady State Steady State RthJA RthJF N-Channel Typ Max 50 62.5 85 110 30 40 P-Channel Typ Max 50 62.5 90 110 30 35 Unit °C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. t ≤ 10 sec * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72223 S-61005-Rev. D, 12-Jun-06 www.vishay.com 1 Si4511DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Diode Forward Voltagb VGS(th) IGSS IDSS ID(on) rDS(on) gfs VDS = VGS, ID = 250 µA N-Ch 0.6 1.8 VDS = VGS, ID = - 250 µA P-Ch - 0.6 1.4 VDS = 0 V, VGS = ± 16 V N-Ch ± 100 VDS = 0 V, VGS = ± 12 V P-Ch ± 100 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 5 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch -5 VDS = 5 V, VGS = 10 V N-Ch 40 VDS = - 5 V, VGS = - 4.5 V P-Ch - 40 VGS = 10 V, ID = 9.6 A N-Ch 0.0115 VGS = - 4.5 V, ID = - 6.2 A P-Ch 0.022 0.033 VGS = 4.5 V, ID = 8.6 A N-Ch 0.0135 0.017 VGS = - 2.5 V, ID = - 5 A P-Ch 0.035 0.050 VDS = 15 V, ID = 9.6 A N-Ch 33 VDS = - 15 V, ID = - 6.2 A P-Ch 17 IS = 1.7 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 1.7 A, VGS = 0 V P-Ch - 0.8 - 1.2 N-Ch 11.5 18 P-Ch 17 20 N-Ch 3.7 P-Ch 4.1 VSD V nA µA A 0.0145 Ω S V Dynamica Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.6 A tr td(off) tf trr P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 6.2 A N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω nC N-Ch 3.3 P-Ch 4.3 N-Ch 12 P-Ch 25 40 N-Ch 12 20 20 P-Ch 30 45 N-Ch 55 85 P-Ch 70 105 N-Ch 15 25 P-Ch 50 75 IF = 1.7 A, di/dt = 100 A/µs N-Ch 50 100 IF = - 1.7 A, di/dt = 100 A/µs P-Ch 40 80 P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72223 S-61005-Rev. D, 12-Jun-06 Si4511DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 40 40 VGS = 10 thru 4 V 3V 32 I D − Drain Current (A) I D − Drain Current (A) 32 24 16 8 24 16 TC = 125 °C 8 25 °C 2V 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 - 55 °C 0 0.0 1.75 1.0 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 2000 1600 0.015 C − Capacitance (pF) VGS = 4.5 V VGS = 10 V 0.010 0.005 Ciss 1200 800 Coss Crss 400 0.000 0 0 8 16 24 32 40 0 4 ID − Drain Current (A) 8 12 16 20 VDS − Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.6 VDS = 10 V ID = 9.6 A 8 1.4 rDS(on) − On-Resistance (Normalized) V GS − Gate-to-Source Voltage (V) 1.5 VDS − Drain-to-Source Voltage (V) 0.020 r DS(on)− On-Resistance ( Ω ) 0.5 6 4 2 VGS = 10 V ID = 9.6 A 1.2 1.0 0.8 0 0 3 6 9 12 15 18 Qg − Total Gate Charge (nC) Gate Charge Document Number: 72223 S-61005-Rev. D, 12-Jun-06 21 24 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ − Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4511DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 0.05 r DS(on) − On-Resistance ( I S − Source Current (A) ) 40 10 TJ = 150 °C TJ = 25 °C 0.04 ID = 9.6 A 0.03 ID = 3 A 0.02 0.01 0.00 1 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 1 4 5 On-Resistance vs. Gate-to-Source Voltage 0.4 30 ID = 250 µA 0.2 25 20 - 0.0 Power (W) V GS(th) Variance (V) 3 VGS − Gate-to-Source Voltage (V) VSD − Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage - 0.2 15 - 0.4 10 - 0.6 5 - 0.8 - 50 2 - 25 0 25 50 75 100 125 0 10 -2 150 10 -1 1 TJ − Temperature (°C) 10 100 600 Time (sec) Threshold Voltage Single Pulse Power 100 rDS(on) Limited IDM Limited P(t) = 0.0001 I D − Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 TC = 25 °C Single Pulse dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Safe Operating Area www.vishay.com 4 Document Number: 72223 S-61005-Rev. D, 12-Jun-06 Si4511DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72223 S-61005-Rev. D, 12-Jun-06 www.vishay.com 5 Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 40 40 VGS = 5 thru 3.5 V TC = - 55 °C 3V 25 °C 32 24 I D − Drain Current (A) I D − Drain Current (A) 32 2.5 V 16 2V 8 125 °C 24 16 8 1.5 V 0 0.0 0.4 0.8 1.2 1.6 0 0.0 2.0 0.5 VDS − Drain-to-Source Voltage (V) 1.5 2.0 2.5 3.0 3.5 VGS − Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3000 0.10 2500 0.08 C − Capacitance (pF) r DS(on) − On-Resistance (Ω) 1.0 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V 0.02 Ciss 2000 1500 1000 Coss 500 Crss 0.00 0 0 8 16 24 32 40 0 4 ID − Drain Current (A) 8 16 20 VDS − Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.6 5 VGS = 4.5 V ID = 6.2 A VDS = 10 V ID = 6.2 A 1.4 4 r DS(on) − On-Resistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 3 2 1.2 1.0 0.8 1 0 0 3 6 9 12 Qg − Total Gate Charge (nC) Gate Charge www.vishay.com 6 15 18 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ − Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 72223 S-61005-Rev. D, 12-Jun-06 Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 0.10 r DS(on) − On-Resistance ( Ω) I S − Source Current (A) 40 TJ = 150 °C 10 TJ = 25 °C 0.08 0.06 ID = 6.2 A 0.04 0.02 0.00 1 0.0 0.3 0.6 0.9 1.2 1.5 0 1 3 4 5 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.6 30 25 0.4 20 ID = 250 µA 0.2 Power (W) V GS(th) Variance (V) 2 VGS − Gate-to-Source Voltage (V) VSD − Source-to-Drain Voltage (V) 0.0 15 10 - 0.2 5 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10 -2 150 10 -1 1 10 TJ − Temperature (°C) Time (sec) Threshold Voltage Single Pulse Power 100 600 100 IDM Limited rDS(on) Limited I D − Drain Current (A) 10 P(t) = 0.001 P(t) = 0.01 1 0.1 ID(on) Limited P(t) = 0.1 P(t) = 1 TC = 25 °C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Safe Operating Area Document Number: 72223 S-61005-Rev. D, 12-Jun-06 www.vishay.com 7 Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72223. www.vishay.com 8 Document Number: 72223 S-61005-Rev. D, 12-Jun-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1