VISHAY SI4511DY_06

Si4511DY
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)
0.0145 at VGS = 10 V
9.6
0.017 at VGS = 4.5 V
8.6
0.033 at VGS = - 4.5 V
- 6.2
0.050 at VGS = - 2.5 V
-5
• TrenchFET® Power MOSFET
Pb-free
N-Channel
20
P-Channel
- 20
Available
APPLICATIONS
RoHS*
• Level Shift
• Load Switch
COMPLIANT
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
D1
S2
G2
Top View
G1
Ordering Information: Si4511DY-T1
Si4511DY-T1-E3 (Lead (Pb)-Free)
D2
S1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source Current (Diode
Conduction)a
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Maximum Power Dissipationa
ID
IDM
IS
PD
TJ, Tstg
N-Channel
P-Channel
10 secs
Steady
10 secs
Steady
20
- 20
± 16
± 12
9.6
7.2
- 6.2
- 4.6
7.7
5.8
- 4.9
- 3.7
40
- 40
1.7
0.9
- 1.7
0.9
2
1.1
2
1.1
1.3
0.7
1.3
0.7
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 sec
Steady State
Steady State
RthJA
RthJF
N-Channel
Typ
Max
50
62.5
85
110
30
40
P-Channel
Typ
Max
50
62.5
90
110
30
35
Unit
°C/W
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
b. t ≤ 10 sec
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72223
S-61005-Rev. D, 12-Jun-06
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Si4511DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltagb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = VGS, ID = 250 µA
N-Ch
0.6
1.8
VDS = VGS, ID = - 250 µA
P-Ch
- 0.6
1.4
VDS = 0 V, VGS = ± 16 V
N-Ch
± 100
VDS = 0 V, VGS = ± 12 V
P-Ch
± 100
VDS = 20 V, VGS = 0 V
N-Ch
1
VDS = - 20 V, VGS = 0 V
P-Ch
-1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
N-Ch
5
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
P-Ch
-5
VDS = 5 V, VGS = 10 V
N-Ch
40
VDS = - 5 V, VGS = - 4.5 V
P-Ch
- 40
VGS = 10 V, ID = 9.6 A
N-Ch
0.0115
VGS = - 4.5 V, ID = - 6.2 A
P-Ch
0.022
0.033
VGS = 4.5 V, ID = 8.6 A
N-Ch
0.0135
0.017
VGS = - 2.5 V, ID = - 5 A
P-Ch
0.035
0.050
VDS = 15 V, ID = 9.6 A
N-Ch
33
VDS = - 15 V, ID = - 6.2 A
P-Ch
17
IS = 1.7 A, VGS = 0 V
N-Ch
0.8
1.2
IS = - 1.7 A, VGS = 0 V
P-Ch
- 0.8
- 1.2
N-Ch
11.5
18
P-Ch
17
20
N-Ch
3.7
P-Ch
4.1
VSD
V
nA
µA
A
0.0145
Ω
S
V
Dynamica
Total Gate Charge
Gate-Source Charge
Qg
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 9.6 A
tr
td(off)
tf
trr
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 6.2 A
N-Channel
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
nC
N-Ch
3.3
P-Ch
4.3
N-Ch
12
P-Ch
25
40
N-Ch
12
20
20
P-Ch
30
45
N-Ch
55
85
P-Ch
70
105
N-Ch
15
25
P-Ch
50
75
IF = 1.7 A, di/dt = 100 A/µs
N-Ch
50
100
IF = - 1.7 A, di/dt = 100 A/µs
P-Ch
40
80
P-Channel
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72223
S-61005-Rev. D, 12-Jun-06
Si4511DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless noted
40
40
VGS = 10 thru 4 V
3V
32
I D − Drain Current (A)
I D − Drain Current (A)
32
24
16
8
24
16
TC = 125 °C
8
25 °C
2V
0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
- 55 °C
0
0.0
1.75
1.0
2.0
2.5
3.0
VGS − Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3.5
2000
1600
0.015
C − Capacitance (pF)
VGS = 4.5 V
VGS = 10 V
0.010
0.005
Ciss
1200
800
Coss
Crss
400
0.000
0
0
8
16
24
32
40
0
4
ID − Drain Current (A)
8
12
16
20
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
1.6
VDS = 10 V
ID = 9.6 A
8
1.4
rDS(on) − On-Resistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
1.5
VDS − Drain-to-Source Voltage (V)
0.020
r DS(on)− On-Resistance ( Ω )
0.5
6
4
2
VGS = 10 V
ID = 9.6 A
1.2
1.0
0.8
0
0
3
6
9
12
15
18
Qg − Total Gate Charge (nC)
Gate Charge
Document Number: 72223
S-61005-Rev. D, 12-Jun-06
21
24
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ − Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4511DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
0.05
r DS(on) − On-Resistance (
I S − Source Current (A)
)
40
10
TJ = 150 °C
TJ = 25 °C
0.04
ID = 9.6 A
0.03
ID = 3 A
0.02
0.01
0.00
1
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
1
4
5
On-Resistance vs. Gate-to-Source Voltage
0.4
30
ID = 250 µA
0.2
25
20
- 0.0
Power (W)
V GS(th) Variance (V)
3
VGS − Gate-to-Source Voltage (V)
VSD − Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
- 0.2
15
- 0.4
10
- 0.6
5
- 0.8
- 50
2
- 25
0
25
50
75
100
125
0
10 -2
150
10 -1
1
TJ − Temperature (°C)
10
100
600
Time (sec)
Threshold Voltage
Single Pulse Power
100
rDS(on) Limited
IDM Limited
P(t) = 0.0001
I D − Drain Current (A)
10
P(t) = 0.001
1
P(t) = 0.01
ID(on)
Limited
P(t) = 0.1
0.1
P(t) = 1
P(t) = 10
TC = 25 °C
Single Pulse
dc
BVDSS Limited
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
Safe Operating Area
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Document Number: 72223
S-61005-Rev. D, 12-Jun-06
Si4511DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 85 °C
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72223
S-61005-Rev. D, 12-Jun-06
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Si4511DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
40
40
VGS = 5 thru 3.5 V
TC = - 55 °C
3V
25 °C
32
24
I D − Drain Current (A)
I D − Drain Current (A)
32
2.5 V
16
2V
8
125 °C
24
16
8
1.5 V
0
0.0
0.4
0.8
1.2
1.6
0
0.0
2.0
0.5
VDS − Drain-to-Source Voltage (V)
1.5
2.0
2.5
3.0
3.5
VGS − Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3000
0.10
2500
0.08
C − Capacitance (pF)
r DS(on) − On-Resistance (Ω)
1.0
0.06
VGS = 2.5 V
0.04
VGS = 4.5 V
0.02
Ciss
2000
1500
1000
Coss
500
Crss
0.00
0
0
8
16
24
32
40
0
4
ID − Drain Current (A)
8
16
20
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
5
VGS = 4.5 V
ID = 6.2 A
VDS = 10 V
ID = 6.2 A
1.4
4
r DS(on) − On-Resistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
12
3
2
1.2
1.0
0.8
1
0
0
3
6
9
12
Qg − Total Gate Charge (nC)
Gate Charge
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6
15
18
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ − Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72223
S-61005-Rev. D, 12-Jun-06
Si4511DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
0.10
r DS(on) − On-Resistance ( Ω)
I S − Source Current (A)
40
TJ = 150 °C
10
TJ = 25 °C
0.08
0.06
ID = 6.2 A
0.04
0.02
0.00
1
0.0
0.3
0.6
0.9
1.2
1.5
0
1
3
4
5
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.6
30
25
0.4
20
ID = 250 µA
0.2
Power (W)
V GS(th) Variance (V)
2
VGS − Gate-to-Source Voltage (V)
VSD − Source-to-Drain Voltage (V)
0.0
15
10
- 0.2
5
- 0.4
- 50
- 25
0
25
50
75
100
125
0
10 -2
150
10 -1
1
10
TJ − Temperature (°C)
Time (sec)
Threshold Voltage
Single Pulse Power
100
600
100
IDM Limited
rDS(on) Limited
I D − Drain Current (A)
10
P(t) = 0.001
P(t) = 0.01
1
0.1
ID(on)
Limited
P(t) = 0.1
P(t) = 1
TC = 25 °C
Single Pulse
P(t) = 10
dc
BVDSS Limited
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
Safe Operating Area
Document Number: 72223
S-61005-Rev. D, 12-Jun-06
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Si4511DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 85 °C
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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data, see http://www.vishay.com/ppg?72223.
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Document Number: 72223
S-61005-Rev. D, 12-Jun-06
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Vishay
Notice
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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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Document Number: 91000
Revision: 08-Apr-05
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