SSF13N50
Main Product Characteristics
VDSS
500V
RDS(on)
0.39Ω(typ.)
ID
13A
TO-220
Features and Benefits:
Marking and Pin
Assignment
Schematic Diagram
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Description
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
13
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
8
IDM
Pulsed Drain Current②
52
Power Dissipation③
166
W
Linear Derating Factor
1.33
W/°C
VDS
Drain-Source Voltage
500
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=4.5mH
753
mJ
IAS
Avalanche Current @ L=4.5mH
18.3
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
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2013.12.09
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Version : 1.1
A
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SSF13N50
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
0.75
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
V
500
—
—
—
0.39
0.48
—
0.91
—
2
—
4
—
2.1
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
40
—
Qgs
Gate-to-Source charge
—
11
—
Qgd
Gate-to-Drain("Miller") charge
—
14
—
td(on)
Turn-on delay time
—
16
—
tr
Rise time
—
27
—
td(off)
Turn-Off delay time
—
46
—
tf
Fall time
—
33
—
Ciss
Input capacitance
—
1491
—
Coss
Output capacitance
—
203
—
Crss
Reverse transfer capacitance
—
2.1
—
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 6.6A
Ω
TJ = 125℃
VDS = VGS, ID = 250μA
V
TJ = 125℃
VDS = 500V,VGS = 0V
μA
TJ = 125℃
VGS =30V
nA
VGS = -30V
ID = 11A,
nC
VDS=400V,
VGS = 10V
VGS=10V, VDS =250V,
nS
RGEN=9.6Ω, ID =11A
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
13
A
—
—
52
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.86
1.4
V
IS=11A, VGS=0V
trr
Reverse Recovery Time
—
400
—
ns
TJ = 25°C, IF =11A,
Qrr
Reverse Recovery Charge
—
2.7
—
μc
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.12.09
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Version : 1.1
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SSF13N50
Test circuits and Waveforms
EAS Test Circuit:
Switching Time Test Circuit:
Gate charge test circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.12.09
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Version : 1.1
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SSF13N50
Typical electrical and thermal characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
©Silikron Semiconductor CO.,LTD.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
2013.12.09
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SSF13N50
Typical electrical and thermal characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Case Temperature
Figure8. Maximum Effective Transient Thermal Impedance,
Junction-to-Case
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2013.12.09
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Version : 1.1
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SSF13N50
Mechanical Data：
TO220 PACKAGE OUTLINE DIMENSION_GN
Symbol
A
A1
A2
b
b1
b2
C
D
D1
D2
E
E1
ФP
ФP1
e
e1
L
L1
L2
L3
L4
Q1
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.240
2.340
2.440
1.270
1.270
1.370
1.470
0.750
0.800
0.850
0.480
0.500
0.520
15.100
15.400
15.700
8.800
8.900
9.000
2.730
2.800
2.870
9.900
10.000
10.100
8.700
3.570
3.600
3.630
1.400
1.500
1.600
2.54BSC
5.08BSC
13.150
13.360
13.570
7.35REF
Dimension In Inches
Nom
Max
0.179
0.185
0.051
0.052
0.092
0.096
0.050
0.054
0.058
0.031
0.033
0.020
0.021
0.606
0.618
0.350
0.354
0.110
0.113
0.394
0.398
0.343
0.142
0.143
0.059
0.063
0.1BSC
0.2BSC
0.518
0.526
0.534
0.29REF
Min
0.173
0.050
0.088
0.050
0.030
0.019
0.594
0.346
0.107
0.390
0.141
0.055
2.900
1.650
3.000
1.750
3.100
1.850
0.114
0.065
0.118
0.069
0.122
0.073
0.900
1.000
1.100
0.035
0.039
0.043
0
5
0
7
0
9
5
0
0
90
7
Q2
Q3
0
5
50
0
7
70
0
9
90
0
5
50
0
7
70
9
90
Q4
10
30
50
10
30
50
©Silikron Semiconductor CO.,LTD.
2013.12.09
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Version : 1.1
0
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SSF13N50
Ordering and Marking Information
Device Marking: SSF13N50
Package (Available)
TO-220
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-220
50
20
1000
6000
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2013.12.09
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Version : 1.1
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SSF13N50
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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Any and all information described or contained herein are subject to change without notice due to
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Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
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TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2013.12.09
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Version : 1.1
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