SSF6005 Main Product Characteristics:
VDSS
60V
RDS(on)
2.7mΩ(typ.)
ID
160A
TO-220 Features and Benefits:
Marking and pin
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Schematic diagram Assignment Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications. Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
160
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
110
IDM
Pulsed Drain Current②
640
Power Dissipation③
230
W
Linear Derating Factor
1.5
W/°C
VDS
Drain-Source Voltage
60
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.07mH②
350
mJ
IAS
Avalanche Current @ L=0.07mH②
100
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
PD @TC = 25°C
©Silikron Semiconductor CO.,LTD.
2013.08.13
www.silikron.com Version : 1.1
Units
A
page 1 of 8
SSF6005
Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
0.65
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Min.
Typ.
Max.
Units
60
—
—
V
—
2.7
3.5
—
4.6
—
2
—
4
—
1.98
—
—
—
1
—
—
50
— — 100
— — -100
Total gate charge
— 179
—
Qgs
Gate-to-Source charge
— 34
—
Qgd
Gate-to-Drain("Miller") charge
— 73
—
VGS = 10V
td(on)
Turn-on delay time
— 27
—
VGS=10V, VDS=35.3V,
tr
Rise time
— 101
—
td(off)
Turn-Off delay time
— 83
—
tf
Fall time
— 122
—
ID=75A
Ciss
Input capacitance
— 7889
—
VGS = 0V
Coss
Output capacitance
— 765
—
Crss
Reverse transfer capacitance
— 623
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 75A
TJ = 125℃
VDS = VGS, ID = 150μA
TJ = 125℃
VDS = 75V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 75A,
nC
ns
pF
VDS=30V,
RL=0.47Ω,
RGEN=2.7Ω
VDS = 50V
ƒ = 700KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
160
A
—
—
640
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.9
1.3
V
IS=75A, VGS=0V
trr
Reverse Recovery Time
—
36
—
ns
TJ = 25°C, IF =75A,
Qrr
Reverse Recovery Charge
—
44
—
nC
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.08.13
www.silikron.com Version : 1.1
page 2 of 8
SSF6005
Test circuits and Waveforms
EAS Test Circuit:
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes: ①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.08.13
www.silikron.com Version : 1.1
page 3 of 8
SSF6005
Typical electrical and thermal characteristics
Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
©Silikron Semiconductor CO.,LTD.
Figure 2. Gate to source cut‐off voltage
2013.08.13
www.silikron.com Figure 4: Normalized On-Resistance Vs. Case
Temperature
Version : 1.1
page 4 of 8
SSF6005
Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.08.13
www.silikron.com Version : 1.1
page 5 of 8
SSF6005
Mechanical Data：
TO220 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
b2
c
D
D1
DEP
E
E1
ФP1
e
e1
H1
L
L1
L2
ФP
Q
Q1
ϴ1
ϴ2
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.590
2.690
2.790
0.770
0.900
1.230
1.360
0.480
0.500
0.520
15.100
15.400
15.700
9.000
9.100
9.200
0.050
0.285
0.520
10.060
10.160
10.260
8.700
1.400
1.500
1.600
2.54BSC
5.08BSC
6.100
6.300
6.500
12.750
12.960
13.170
3.950
1.85REF
3.570
3.600
3.630
2.730
2.800
2.870
0.200
0
5
0
1
©Silikron Semiconductor CO.,LTD.
0
7
0
3
0
9
0
5
2013.08.13
www.silikron.com Min
0.173
0.050
0.102
0.030
0.048
0.019
0.354
0.002
0.396
0.055
0.240
0.502
0.141
0.107
0
5
0
1
Dimension In Inches
Nom
0.179
0.051
0.106
0.020
0.606
0.358
0.011
0.400
0.343
0.059
0.1BSC
0.2BSC
0.248
0.510
0.073REF
0.142
0.110
0.008
0
7
0
3
Version : 1.1
Max
0.185
0.052
0.110
0.035
0.054
0.020
0.362
0.020
0.404
0.063
0.256
0.519
0.156
0.143
0.113
0
9
0
5
page 6 of 8
SSF6005
Ordering and Marking Information
Device Marking: SSF6005
Package (Available)
TO-220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO220
50
20
1000
6000
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2013.08.13
www.silikron.com Version : 1.1
page 7 of 8
SSF6005
ATTENTION:
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
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Worldwide Sales and Service:
[email protected]
Technical Support:
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E-mail: [email protected]
©Silikron Semiconductor CO.,LTD.
2013.08.13
www.silikron.com Version : 1.1
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