SSFT3906 Main Product Characteristics:
30V
VDSS
SSFT3906
RDS(on)
3.2mohm(typ.)
ID
90A
TO220 Schematic diagram Marking and pin
Assignment Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
90
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
60
IDM
Pulsed Drain Current②
180
Power Dissipation③
91
W
Linear Derating Factor
0.61
W/°C
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
304
mJ
IAS
Avalanche Current @ L=0.3mH
45
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
PD @TC = 25°C
©Silikron Semiconductor CO.,LTD.
2011.08.08
www.silikron.com Version : 2.0
A
page 1 of 7
SSFT3906 Thermal Resistance
Symbol
Characterizes
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
1.65
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characterizes @TA=25℃
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source breakdown
Min.
unless otherwise specified
Typ.
Max.
Units
V
30
—
—
—
3.2
6
Static Drain-to-Source
—
4.3
—
on-resistance
— 4.8
8.5
— 6.2
—
1
1.73
3
—
1.52
—
Drain-to-Source leakage
—
—
1
current
—
—
50
Gate-to-Source forward
— — 100
-100
— —
voltage
Gate threshold voltage
leakage
Qg
Total gate charge
— 35.25
—
Qgs
Gate-to-Source charge
— 11.04
—
Qgd
Gate-to-Drain("Miller") charge
— 15.94
—
td(on)
Turn-on delay time
— 14.6
—
tr
Rise time
— 48.9
—
td(off)
Turn-Off delay time
— 30.6
—
tf
Fall time
— 10.3
—
Ciss
Input capacitance
— 4315
—
Coss
Output capacitance
— 439
—
Crss
Reverse transfer capacitance
— 403
—
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
mΩ
TJ = 125℃
VGS=4.5V,ID = 20A
TJ = 125℃
V
μA
nA
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 30V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 32A,
nC
VDS=15V,
VGS =4.5V
ns
VGS=4.5V, VDS=15V,
RGEN=2Ω，ID = 32A,
VGS = 0V
pF
VDS = 15V
ƒ = 800kHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
90
A
—
—
180
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.71
1.3
V
IS=1A, VGS=0V
trr
Reverse Recovery Time
—
15.8
—
ns
TJ = 25°C, IF =30A,
Qrr
Reverse Recovery Charge
—
8.0
—
nC
di/dt = 150A/μs
©Silikron Semiconductor CO.,LTD.
2011.08.08
www.silikron.com Version : 2.0
page 2 of 7
SSFT3906 Test circuits and Waveforms
Switch Waveforms:
Notes: ①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
©Silikron Semiconductor CO.,LTD.
2011.08.08
www.silikron.com Version : 2.0
page 3 of 7
SSFT3906 ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Figure 2: Transfer Characteristics Normalized On-Resistance
)
Figure 1: Rdson vs Vgs
Ω
Rdson On-Resistance (m
Rdson On-Resistance (mohm)
Typical electrical and thermal characteristics
Vgs=10V
ID=30A
Vgs=4.5V
ID=20A
150
TJ-Junction Temperature(℃)
ID- Drain Current (A)
Figure 4: Drain‐Source On‐Resistance Figure 3: Drain-Source On-Resistance
©Silikron Semiconductor CO.,LTD.
2011.08.08
www.silikron.com Version : 2.0
page 4 of 7
SSFT3906 Mechanical Data：
TO220 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
b2
c
D
D1
DEP
E
E1
ФP1
e
e1
H1
L
L1
L2
ФP
Q
Q1
ϴ1
ϴ2
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.590
2.690
2.790
0.770
0.900
1.230
1.360
0.480
0.500
0.520
15.100
15.400
15.700
9.000
9.100
9.200
0.050
0.285
0.520
10.060
10.160
10.260
8.700
1.400
1.500
1.600
2.54BSC
5.08BSC
6.100
6.300
6.500
12.750
12.960
13.170
3.950
1.85REF
3.570
3.600
3.630
2.730
2.800
2.870
0.200
50
10
©Silikron Semiconductor CO.,LTD.
70
30
90
50
2011.08.08
www.silikron.com 0.141
0.107
-
Dimension In Inches
Nom
0.179
0.051
0.106
0.020
0.606
0.358
0.011
0.400
0.343
0.059
0.1BSC
0.2BSC
0.248
0.510
0.073REF
0.142
0.110
0.008
50
10
70
30
Min
0.173
0.050
0.102
0.030
0.048
0.019
0.354
0.002
0.396
0.055
0.240
0.502
-
Version : 2.0
Max
0.185
0.052
0.110
0.035
0.054
0.020
0.362
0.020
0.404
0.063
0.256
0.519
0.156
0.143
0.113
90
50
page 5 of 7
SSFT3906 Ordering and Marking Information
Device Marking: SSFT3906
Package (Available)
TO220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
TO220
Units/ Tubes/
Tube Inner Box
50
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/
Inner Box
1000
Inner Boxes/
Carton Box
6
Duration
Sample Size
Tj=150℃ or 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2011.08.08
www.silikron.com Version : 2.0
Units/
Carton Box
6000
page 6 of 7
SSFT3906 ATTENTION:
■
■
■
■
■
■
■
■
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause
damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for
safe design, redundant design, and structural design.
In the event that any or all Silikron products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from the authorities concerned in accordance with the above law.
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including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
Silikron product that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change
without notice.
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©Silikron Semiconductor CO.,LTD.
2011.08.08
www.silikron.com Version : 2.0
page 7 of 7