SSF1010 Main Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.) ID 100A TO220 Features and Benefits: Marking and pin Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Schematic diagram Assignment Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute max Rating: Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 100 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 70 IDM Pulsed Drain Current② 400 Power Dissipation③ 205 W Linear Derating Factor 1.3 W/°C VDS Drain-Source Voltage 100 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=1.28mH 576 mJ IAS Avalanche Current @ L=1.28mH 30 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C PD @TC = 25°C ©Silikron Semiconductor CO.,LTD. 2011.05.25 www.silikron.com Version : 2.2 Units A page 1 of 8 SSF1010 Thermal Resistance Symbol Characterizes RθJC RθJA Typ. Max. Units Junction-to-case③ — 0.73 °C /W Junction-to-ambient (t ≤ 10s) ④ — 62 °C /W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 °C /W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Typ. Max. Units V Conditions 100 — — — 9.5 10 — 17.8 — 2 — 4 — 2.52 — — — 1 — — 50 — — 100 -100 — — Total gate charge — 120 — Qgs Gate-to-Source charge — 24 — Qgd Gate-to-Drain("Miller") charge — 45 — VGS = 10V td(on) Turn-on delay time — 39 — VGS=10V, VDS=30V, tr Rise time — 67 — td(off) Turn-Off delay time — 221 — tf Fall time — 79 — ID=2A Ciss Input capacitance — 5688 — VGS = 0V Coss Output capacitance — 312 — Crss Reverse transfer capacitance — 287 — mΩ V μA nA VGS = 0V, ID = 250μA VGS=10V,ID = 30A TJ = 125°C VDS = VGS, ID = 250μA TJ = 125°C VDS = 100V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V ID = 30A, nC ns pF VDS=30V, RL=15Ω, RGEN=2.5Ω VDS = 25V ƒ =1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 100 A — — 400 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.85 1.3 V IS=60A, VGS=0V trr Reverse Recovery Time — 51 — ns TJ = 25°C, IF =75A, di/dt = Qrr Reverse Recovery Charge — 135 — nC 100A/μs ©Silikron Semiconductor CO.,LTD. 2011.05.25 www.silikron.com Version : 2.2 page 2 of 8 SSF1010 Test circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. ⑥ The maximum current rating is limited by bond-wires. ©Silikron Semiconductor CO.,LTD. 2011.05.25 www.silikron.com Version : 2.2 page 3 of 8 SSF1010 Typical electrical and thermal characteristics Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage vs. Temperature ©Silikron Semiconductor CO.,LTD. Figure 2. Gate to source cut‐off voltage 2011.05.25 www.silikron.com Figure 4: Normalized On-Resistance Vs. Case Temperature Version : 2.2 page 4 of 8 SSF1010 Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case Temperature Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO.,LTD. 2011.05.25 www.silikron.com Version : 2.2 page 5 of 8 SSF1010 Mechanical Data: TO220 PACKAGE OUTLINE DIMENSION Symbol A A1 A2 b b2 c D D1 DEP E E1 ФP1 e e1 H1 L L1 L2 ФP Q Q1 ϴ1 ϴ2 Dimension In Millimeters Min Nom Max 4.400 4.550 4.700 1.270 1.300 1.330 2.590 2.690 2.790 0.770 0.900 1.230 1.360 0.480 0.500 0.520 15.100 15.400 15.700 9.000 9.100 9.200 0.050 0.285 0.520 10.060 10.160 10.260 8.700 1.400 1.500 1.600 2.54BSC 5.08BSC 6.100 6.300 6.500 12.750 12.960 13.170 3.950 1.85REF 3.570 3.600 3.630 2.730 2.800 2.870 0.200 0 5 0 1 ©Silikron Semiconductor CO.,LTD. 0 7 0 3 0 9 0 5 2011.05.25 www.silikron.com Min 0.173 0.050 0.102 0.030 0.048 0.019 0.354 0.002 0.396 0.055 0.240 0.502 0.141 0.107 0 5 0 1 Dimension In Inches Nom 0.179 0.051 0.106 0.020 0.606 0.358 0.011 0.400 0.343 0.059 0.1BSC 0.2BSC 0.248 0.510 0.073REF 0.142 0.110 0.008 0 7 0 3 Version : 2.2 Max 0.185 0.052 0.110 0.035 0.054 0.020 0.362 0.020 0.404 0.063 0.256 0.519 0.156 0.143 0.113 0 9 0 5 page 6 of 8 SSF1010 Ordering and Marking Information Device Marking: SSF1010 Package (Available) TO220 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type TO220 Units/ Tube Tubes/Inner Box 50 20 Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Units/Inner Inner Box Boxes/Carton Box 1000 6 Duration Sample Size Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ or 175℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO.,LTD. 2011.05.25 www.silikron.com Version : 2.2 Units/Carton Box 6000 page 7 of 8 SSF1010 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO.,LTD. 2011.05.25 www.silikron.com Version : 2.2 page 8 of 8