SSF7507
75V N-Channel MOSFET
Main Product Characteristics
VDSS
75V
RDS(ON)
5mohm(typ.)
ID
110A
TO-220
Schematic Diagram
Assignment
Features and Benefits
Marking and Pin
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Parameter
Max.
ID @ TC = 25°C
Symbol
Continuous Drain Current, VGS @ 10V①
110
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
80
IDM
Pulsed Drain Current②
420
Power Dissipation③
241
W
Linear Derating Factor
1.5
W/°C
VDS
Drain-Source Voltage
75
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH②
633
mJ
IAR
Avalanche Current @ L=0.3mH②
65
A
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 8
Units
A
Rev.1.0
SSF7507
75V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
0.62
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62.5
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
75
—
—
V
—
5
6
—
9
—
2
—
4
—
2.45
—
—
—
1
—
—
50
—
—
100
-100
—
—
Total gate charge
—
127.7
—
Qgs
Gate-to-Source charge
—
30.9
—
Qgd
Gate-to-Drain("Miller") charge
—
47.6
—
td(on)
Turn-on delay time
—
23.1
—
tr
Rise time
—
19.9
—
td(off)
Turn-Off delay time
—
61.4
—
tf
Fall time
—
28.4
—
Ciss
Input capacitance
—
6776
—
Coss
Output capacitance
—
535
—
Crss
Reverse transfer capacitance
—
484
—
mΩ
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
nA
VDS = 75V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 30A,
nC
VDS=30V,
VGS = 10V
VGS=10V, VDS=30V,
ns
RL=15Ω,
RGEN=2.55Ω
VGS = 0V,
pF
VDS = 25V,
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
110
A
—
—
420
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.84
1.3
V
IS=30A, VGS=0V
trr
Reverse Recovery Time
—
42.8
—
ns
TJ = 25°C, IF =75A, di/dt =
Qrr
Reverse Recovery Charge
—
86.7
—
nC
100A/μs
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Page 2 of 8
Rev.1.0
SSF7507
75V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 3 of 8
Rev.1.0
SSF7507
75V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
Temperature
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Figure 4: Normalized On-Resistance Vs. Case
Page 4 of 8
Rev.1.0
SSF7507
75V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 8
Rev.1.0
SSF7507
75V N-Channel MOSFET
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 6 of 8
Rev.1.0
SSF7507
75V N-Channel MOSFET
Mechanical Data
TO220 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
b2
c
D
D1
DEP
E
E1
ФP 1
e
e1
H1
L
L1
L2
ФP
Q
Q1
ϴ1
ϴ2
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Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.590
2.690
2.790
0.770
0.900
1.230
1.360
0.480
0.500
0.520
15.100
15.400
15.700
9.000
9.100
9.200
0.050
0.285
0.520
10.060
10.160
10.260
8.700
1.400
1.500
1.600
2.54BSC
5.08BSC
6.100
6.300
6.500
12.750
12.960
13.170
3.950
1.85REF
3.570
3.600
3.630
2.730
2.800
2.870
0.200
0
5
0
1
0
7
0
3
0
9
0
5
Page 7 of 8
Min
0.173
0.050
0.102
0.030
0.048
0.019
0.354
0.002
0.396
0.055
0.240
0.502
0.141
0.107
0
5
0
1
Dimension In Inches
Nom
0.179
0.051
0.106
0.020
0.606
0.358
0.011
0.400
0.343
0.059
0.1BSC
0.2BSC
0.248
0.510
0.073REF
0.142
0.110
0.008
0
7
0
3
Max
0.185
0.052
0.110
0.035
0.054
0.020
0.362
0.020
0.404
0.063
0.256
0.519
0.156
0.143
0.113
0
9
0
5
Rev.1.0
SSF7507
75V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF7507
Package (Available)
TO-220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package Units/ Tubes/Inner
Type
Tube Box
TO-220
50
Units/Inner
Box
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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1000
Inner
Units/Carton
Boxes/Carton Box
Box
6
6000
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 8 of 8
Rev.1.0