SSF7509B Main Product Characteristics: VDSS 70V RDS(on) 5.3mΩ(typ.) ID 100A TO-220 Features and Benefits: Marking and Pin Schematic Diagram Assignment Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol Parameter Max. ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 100 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 86 IDM Pulsed Drain Current② 400 Power Dissipation③ 200 W Linear Derating Factor 1.3 W/°C VDS Drain-Source Voltage 70 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.3mH 375 mJ IAS Avalanche Current @ L=0.3mH 50 A -55 to +175 °C PD @TC = 25°C TJ TSTG Operating Junction and Storage Temperature Range ©Silikron Semiconductor CO.,LTD. 2014.01.06 www.silikron.com Version : 1.0 Units A page 1 of 8 SSF7509B Thermal Resistance Symbol Characteristics RθJC RθJA Typ. Max. Units Junction-to-case③ — 0.75 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Qg Min. Typ. Max. Units 70 — — V — 5.3 8 — 9.3 2 — 4 — 2.36 — — — 1 — — 50 — — 100 — — -100 Total gate charge — 85 — Qgs Gate-to-Source charge — 22 — Qgd Gate-to-Drain("Miller") charge — 29 — td(on) Turn-on delay time — 18 — tr Rise time — 18 — td(off) Turn-Off delay time — 55 — tf Fall time — 19 — Ciss Input capacitance — 4552 — Coss Output capacitance — 401 — Crss Reverse transfer capacitance — 285 — Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 30A mΩ TJ = 125℃ VDS = VGS, ID = 250μA V TJ = 125℃ VDS = 70V,VGS = 0V μA TJ = 125℃ VGS =20V nA VGS = -20V ID = 30A, nC VDS=30V, VGS = 10V VGS=10V, VDS=30V, ns RL=15Ω, RGEN=2.5Ω VGS = 0V pF VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units — — 100 A — — 400 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage — 0.95 1.3 V IS=30A, VGS=0V trr Reverse Recovery Time — 40 — ns TJ = 25°C, IF =68A, Qrr Reverse Recovery Charge — 73 — nC di/dt = 100A/μs ©Silikron Semiconductor CO., LTD. 2014.01.06 www.silikron.com Version : 1.0 page 2 of 8 SSF7509B Test circuits and Waveforms EAS Test Circuit: Switching Time Test Circuit: Gate charge test circuit: Switching Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO., LTD. 2014.01.06 www.silikron.com Version : 1.0 page 3 of 8 SSF7509B Typical electrical and thermal characteristics Figure 2. Gate to source cut-off voltage Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature ©Silikron Semiconductor CO., LTD. Figure 4: Normalized On-Resistance Vs. Case Temperature 2014.01.06 www.silikron.com Version : 1.0 page 4 of 8 SSF7509B Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6.Typical Capacitance Vs. Drain-to-Source Temperature Voltage Case Temperature Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO., LTD. 2014.01.06 www.silikron.com Version : 1.0 page 5 of 8 SSF7509B Mechanical Data: TO220 PACKAGE OUTLINE DIMENSION_GN Symbol A A1 A2 b b1 b2 C D D1 D2 E E1 ФP Dimension In Millimeters Min Nom Max 4.400 4.550 4.700 1.270 1.300 1.330 2.240 2.340 2.440 1.270 1.270 1.370 1.470 0.750 0.800 0.850 0.480 0.500 0.520 15.100 15.400 15.700 8.800 8.900 9.000 2.730 2.800 2.870 9.900 10.000 10.100 8.700 3.570 3.600 3.630 Min 0.173 0.050 0.088 0.050 0.030 0.019 0.594 0.346 0.107 0.390 0.141 1.400 1.600 0.055 13.570 0.518 ФP1 e e1 L 13.150 L1 L2 L3 2.900 1.650 3.000 1.750 3.100 1.850 0.900 1.000 50 70 Q2 Q3 0 5 50 0 Q4 10 L4 Q1 ©Silikron Semiconductor CO., LTD. 1.500 2.54BSC 5.08BSC 13.360 7.35REF Dimension In Inches Nom Max 0.179 0.185 0.051 0.052 0.092 0.096 0.050 0.054 0.058 0.031 0.033 0.020 0.021 0.606 0.618 0.350 0.354 0.110 0.113 0.394 0.398 0.343 0.142 0.143 0.059 0.1BSC 0.2BSC 0.526 0.29REF 0.063 0.114 0.065 0.118 0.069 0.122 0.073 1.100 0.035 0.039 0.043 90 50 70 90 7 70 0 9 90 0 5 50 0 7 70 90 90 30 50 10 30 50 2014.01.06 www.silikron.com Version : 1.0 0.534 page 6 of 8 SSF7509B Ordering and Marking Information Device Marking: SSF7509B Package (Available) TO-220 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/Carton Box TO-220 50 20 1000 6000 6 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=175℃@ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices ©Silikron Semiconductor CO., LTD. 2014.01.06 www.silikron.com Version : 1.0 page 7 of 8 SSF7509B ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: [email protected] ©Silikron Semiconductor CO., LTD. 2014.01.06 www.silikron.com Version : 1.0 page 8 of 8