Datasheet

SSF4703DC
DESCRIPTION
The SSF4703DC uses advanced trench technology
to provide excellent RDS(ON) and low gate charge . A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch,
or for DC-DC conversion applications.
GENERAL FEATURES
Schematic diagram
● MOSFET
VDS = -20V,ID = -3.4A
RDS(ON) < 160mΩ @ VGS=-1.8V
RDS(ON) < 120mΩ @ VGS=-2.5V
RDS(ON) < 90mΩ @ VGS=-4.5V
●SCHOTTKY
VR = 20V, IF = 1A, VF<0.5V @ 0.5A
Pin Assignment
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●DC-DC conversion applications
●Load switch
●Power management
DFN3X2-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
4703DC
SSF4703DC
DFN3X2-8L
－
－
－
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
MOSFET
Schottky
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
ID
-3.4
A
IDM
-15
A
Drain Current-Continuous@ Current-Pulsed (Note 1)
Schottky reverse voltage
VR
20
V
Continuous Forward Current
IF
1.9
A
Pulsed Forward Current
IFM
7
A
Maximum Power Dissipation
PD
1.7
0.96
W
TJ,TSTG
-55 To 150
-55 To 150
℃
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
MOSFET
Thermal Resistance, Junction-to-Ambient (Note 2)
©Silikron Semiconductor CO.,LTD.
RθJA
1
75
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℃/W
v2.0
SSF4703DC
Schottky
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA
80
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
℃/W
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-20
V
Zero Gate Voltage Drain Current
IDSS
VDS=-16V,VGS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
±100
nA
VGS(th)
VDS=VGS,ID=-250μA
-0.7
-1
V
VGS=-4.5V, ID=-3.4A
73
90
VGS=-2.5V, ID=-2.5A
99
120
VGS=-1.8V, ID=-1.5A
133
160
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
RDS(ON)
gFS
VDS=-5V,ID=-3.4A
-0.45
4
mΩ
7
S
540
PF
70
PF
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=-10V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
50
PF
Turn-on Delay Time
td(on)
10
nS
Turn-on Rise Time
tr
12
nS
44
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
VDD=-10V,ID=-3.4A
VGS=-4.5V,RGEN=3Ω
td(off)
Turn-Off Fall Time
tf
22
nS
Total Gate Charge
Qg
6.1
nC
Gate-Source Charge
Qgs
0.6
nC
Gate-Drain Charge
Qgd
1.6
nC
VDS=-10V,ID=-3.4A,VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VGS=0V,IS=-1A
-0.83
-1
V
-2
A
0.5
V
0.1
mA
SCHOTTKY PARAMETERS
Forward Voltage Drop
VF
IF=0.5A
0.39
Maximum reverse leakage current
Irm
VR=16V
Junction Capacitance
CT
VR=10V
34
Schottky Reverse Recovery Time
trr
IF=1A, dI/dt=100A/μs
5.2
Schottky Reverse Recovery Charge
Qrr
IF=1A, dI/dt=100A/μs
0.8
pF
10
ns
nC
NOTES:
©Silikron Semiconductor CO.,LTD.
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v2.0
SSF4703DC
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS（MOSFET）
ton
tr
Vdd
td(on)
Vgs
Rgen
td(off)
Rl
Vin
90%
Vout
D
toff
tf
VOUT
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Figure1:Switching Test Circuit
8
10
-55 OC
Vgs=5V
Vgs=3V
Vgs=2.5V
6
Id Drain Current(A)
Id - Drain Current(A)
8
6
Vgs=2V
4
25 OC
4
2
2
125 OC
Vgs=1.5V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
4
0
0.5
1
1.5
2
Vgs Gate-to-Source Voltage(V)
Vds - Drain-to Source Voltage(V)
Figure 3:Output Characteristics
Figure 4:Transfer Characteristics
0.3
800
700
0.25
Vgs=1.8V
0.2
C - Capacitance(pF)
Rdson - On-Resisitance(Ohm)
2.5
Vgs=2.5V
0.15
Vgs=4.5V
0.1
0.05
Ciss
600
500
400
300
Coss
200
100
Crss
0
0
0
2
4
6
8
Id - Drain Current(A)
10
0
Figure 5:On-Resistance vs. Drain Current
©Silikron Semiconductor CO.,LTD.
5
10
15
Vds - Drain-to-Source Voltage(V)
20
Figure 6: Capacitance
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ZθJA Normalized Transient
Thermal Resistance
SSF4703DC
Square Wave Pluse Duration(sec)
Figure 7: Normalized Maximum Transient Thermal Impedanc
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS（SCHOTTKY）
10
10
0.1
If - Forward Current(A)
Ir - Reverse Current(A)
1
20V
10V
0.01
Tj=150oC
1
Tj=25oC
0.001
0.0001
0
25
50
75
100
125
0.1
150
0
Tj - Juction Temperature(oC)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Vf - Forward Drop(V)
Figure 8:
Reverse Current vs. Junction Temperature
©Silikron Semiconductor CO.,LTD.
0.1
Figure 9: Forward Voltage Drop
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SSF4703DC
DFN3X2-8L PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Top View
Bottom View
SYMBOL
Side View
COMMON DIMENSIONS(MM)
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
A1
—
0.02
0.05
b
0.25
0.30
0.35
c
0.18
0.20
0.25
D
2.90
3.00
3.10
e
0.65 BCS.
Nd
1.95 BCS.
E
L
h
1.90
2.00
2.10
0.28
0.35
0.42
0.15X45°
NOTES：
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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v2.0
SSF4703DC
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
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functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
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cannot be evaluated in an independent device, the customer should always evaluate and test devices
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor CO.,LTD.
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