HS-302RH/883S, HS-303RH/883S, HS-306RH/883S, HS-307RH/883S, HS-384RH/883S, HS-390RH/883S Radiation Hardened CMOS Analog Switches September 1995 Features Description • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HS-3XXRH/883S family of analog switches are monolithic devices fabricated using Radiation Hardened CMOS technology and the Intersil dielectric isolation process for latch-up free operation. Improved total dose hardness is obtained by layout (thin oxide tabs extending to a channel stop) and processing (hardened gate oxide). These switches offer low-resistance switching performance for analog voltages up to the supply rails. “ON” resistance is low and stays reasonably constant over the full range of operating voltage and current. “ON” resistance also stays reasonably constant when exposed to radiation, being typically 30Ω pre-rad and 35Ω post 100K RAD-Si. All devices provide break-before-make switching. • Radiation Hardened - Functional Total Dose Exceeds 1 x 105 RAD Si • Pin for Pin Compatible with Intersil HI-3XX Series Analog Switches • Analog Signal Range 15V • Low Leakage • Low RON • No Latch Up The 6 devices in this switch series are differentiated by type of switch action, pinout and digital logic levels. The HS-302/ 303/384/390RH/883S switches have 5V digital inputs while the HS-306/307RH/883S switches have 15V digital inputs. All devices are available in Ceramic Flatpack and SBDIP packages. The HS-3XXRH/883S switches can directly replace the HI-3XX series devices. • Versions for 5V and 15V Digital Systems • Low Operating Power • Military Temperature Range -55oC to +125oC Applications • Sample and Hold i.e. Low Leakage Switching • Op Amp Gain Switching i.e. Low ON Resistance Functional Diagram • Switched Capacitor Filters • Low Level Switching Circuits IN • Satellites N P D • Nuclear Reactor Controls • Military Environments Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE HS1-302RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead SBDIP HS9-302RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack HS1-302RH/Sample +25oC Sample 14 Lead SBDIP HS9-302RH/Sample +25oC Sample 14 Lead Ceramic Flatpack HS1-303RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead SBDIP HS9-303RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack HS1-303RH/Sample +25oC Sample 14 Lead SBDIP HS9-303RH/Sample +25oC Sample 14 Lead Ceramic Flatpack HS1-306RH/883S ( Note 1) -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead SBDIP HS9-306RH/883S ( Note 1) -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 1 Spec Number File Number 518526 3067.1 HS-3XXRH/883S Ordering Information (Continued) PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE HS1-306RH/Sample (Note 1) +25oC Sample 14 Lead SBDIP HS9-306RH/Sample (Note 1) +25oC Sample 14 Lead Ceramic Flatpack HS1-307RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead SBDIP HS9-307RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 14 Lead Ceramic Flatpack HS1-307RH/Sample +25oC Sample 14 Lead SBDIP HS9-307RH/Sample +25oC Sample 14 Lead Ceramic Flatpack HS1-384RH/883S (Note 1) -55oC to +125oC Intersil /883 Class S Equivalent 16 Lead SBDIP HS9-384RH/883S (Note 1) -55oC to +125oC Intersil /883 Class S Equivalent 16 Lead Ceramic Flatpack HS1-384RH/Sample (Note 1) +25oC Sample 16 Lead SBDIP HS9-384RH/Sample (Note 1) +25oC Sample 16 Lead Ceramic Flatpack HS1-390RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 16 Lead SBDIP HS9-390RH/883S -55oC to +125oC Intersil /883 Class S Equivalent 16 Lead Ceramic Flatpack HS1-390RH/Sample +25oC Sample 16 Lead SBDIP HS9-390RH/Sample +25oC Sample 16 Lead Ceramic Flatpack NOTE: 1. Not recommended for new design. Pinouts (Switch States are for Logic “1” Inputs) 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW DUAL DPST HS-302RH/883S HS-306RH/883S NC 1 S3 2 D3 3 14 V+ 13 S4 12 D4 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16 TOP VIEW DUAL SPDT HS-303RH/883S HS-307RH/883S 1 NC 2 S3 3 D3 DUAL DPST HS-384RH/883S 14 V+ D1 1 16 S1 D1 1 16 S1 13 S4 NC 2 15 IN1 NC 2 15 IN1 D3 3 14 V- D3 3 14 V- S3 4 13 GND S3 4 13 GND 12 D4 D1 4 11 D2 D1 4 11 D2 S1 5 10 S2 S1 5 10 S2 IN1 6 9 IN2 GND 7 8 V- IN1 6 GND 7 9 IN2 8 V- LOGIC SWITCH 1-4 LOGIC SW1 SW2 0 OFF 0 1 ON 1 DUAL SPDT HS-390RH/883S S4 5 12 NC S4 5 12 NC D4 6 11 V+ D4 6 11 V+ NC 7 10 IN2 NC 7 10 IN2 D2 8 9 S2 D2 8 9 S2 SW3 SW4 LOGIC SWITCH 1-4 LOGIC SW1 SW2 OFF ON 0 OFF 0 OFF ON ON OFF 1 ON 1 ON OFF Spec Number 2 SW3 SW4 518526 HS-3XXRH/883S Pinouts (Switch States are for Logic “1” Inputs) (Continued) 14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDIP3-F14 TOP VIEW DUAL DPST HS-302RH/883S HS-306RH/883S NC S3 D3 D1 S1 IN1 DUAL SPDT HS-303RH/883S HS-307RH/883S 1 14 2 13 3 12 4 11 5 10 6 9 7 8 GND V+ NC S4 S3 D4 D3 D2 D1 S2 S1 IN2 IN1 V- 1 14 2 13 3 12 4 11 5 10 6 9 7 8 GND V+ S4 D4 D2 S2 IN2 V- LOGIC SWITCH 1 - 4 LOGIC SW1 AND SW2 SW3 AND SW4 0 OFF 0 OFF ON 1 ON 1 ON OFF 16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDIP4-F16 TOP VIEW DUAL DPST HS-384RH/883S D1 NC D3 S3 DUAL SPDT HS-390RH/883S 1 16 2 15 3 14 4 13 5 12 S4 D4 NC D2 S1 D1 IN1 NC V- D3 GND S3 NC S4 V+ D4 IN2 NC S2 D2 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 S1 IN1 VGND NC 6 11 7 10 8 9 LOGIC SWITCH 1 - 4 LOGIC SW1 AND SW2 SW3 AND SW4 0 OFF 0 OFF ON 1 ON 1 ON OFF V+ IN2 S2 Spec Number 3 518526 Specifications HS-3XXRH/883S Absolute Maximum Ratings Reliability Information Supply Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . +44V +VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +22V -VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-22V Analog Input Overvoltages: +VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +VSUPPLY +1.5V -VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-VSUPPLY - 1.5V Digital Input Overvoltage: +VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+VSUPPLY +4V -VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-VSUPPLY -4V Peak Current, S or D Pulsed at 1ms, 10% Duty Cycle Max . . . 40mA Continuous Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Lead Temperature (soldering 10s) . . . . . . . . . . . . . . . . . . . . .≤ +300oC Thermal Resistance θJA θJC 14 Lead SBDIP Package . . . . . . . . . . . . . 70oC/W 19oC/W 14 Lead Ceramic Flatpack Package . . . . 105oC/W 17oC/W 16 Lead SBDIP Package . . . . . . . . . . . . . 70oC/W 19oC/W 16 Lead Ceramic Flatpack Package . . . . 105oC/W 17oC/W Maximum Package Power Dissipation at +125oC Ambient 14 Lead SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W 14 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . 0.48W 16 Lead SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W 16 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . .0.48 If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: 14 Lead SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/oC 14 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . 9.5mW/oC 16 Lead SBDIP Package . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/oC 16 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . 9.5mW/oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Supply Voltage (± VSupply) . . . . . . . . . . . . . . . . . . . . . ±15V Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC TABLE 1. HS-302RH/303RH/384RH/390RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V PARAMETER “Switch On” Resistance SYMBOL +RDS -RDS Leakage Current Into the Source Terminal of an “Off” Switch +IS(OFF) -IS(OFF) Leakage Current into the Drain Terminal of an “Off” Switch +ID(OFF) -ID(OFF) Leakage Current from an “On” Driver Into the Switch (Drain & Source) +ID(ON) -ID(ON) Low Level Input Address Current High Level Input Address Current IAL IAH CONDITIONS VD = 10V, IS = -10mA, S1/S2/S3/S4 VD = -10V, IS = 10mA, S1/S2/S3/S4 VS = +14V, VD = -14V, S1/S2/S3/S4 VS = -14V, VD = +14V, S1/S2/S3/S4 VS = -14V, VD = +14V, S1/S2/S3/S4 VS = +14V, VD = -14V, S1/S2/S3/S4 VS = VD = +14V, S1/S2/S3/S4 VS = VD = -14V, S1/S2/S3/S4 All Channels VA = 0.8V All Channels VA = 4.0V GROUP A SUBGROUPS LIMITS TEMPERATURE MIN MAX UNITS 1 +25oC - 50 Ω 2, 3 -55oC to +125oC - 75 Ω 1 +25oC - 50 Ω 2, 3 -55oC to +125oC - 75 Ω 1 +25oC -2 2 nA 2, 3 -55oC to +125oC -100 100 nA 1 +25oC -2 2 nA 2, 3 -55oC to +125oC -100 100 nA 1 +25oC -2 2 nA 2, 3 -55oC to +125oC -100 100 nA 1 +25oC -2 2 nA 2, 3 -55oC to +125oC -100 100 nA 1 +25oC -2 2 nA 2, 3 -55oC to +125oC -100 100 nA 1 +25oC -2 2 nA 2, 3 -55oC to +125oC -100 100 nA 1 +25oC -1 1 µA 2, 3 -55oC to +125oC -1 1 µA 1 +25oC -1 1 µA 2, 3 -55oC to +125oC -1 1 µA Spec Number 4 518526 Specifications HS-3XXRH/883S TABLE 1. HS-302RH/303RH/384RH/390RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V (Continued) PARAMETER SYMBOL Positive Supply Current I(+) CONDITIONS All Channels VA = 0.8V GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 10 µA - 100 µA - 0.5 mA - 1 mA -10 - µA -100 - µA -10 - µA -100 - µA 2, 3 VA1 = 0V, VA2 = 4.0V and VA1 = 4.0V, VA2 = 0V 1 2, 3 Negative Supply Current I(-) All Channels VA = 0.8V 1 2, 3 VA1 = 0V, VA2 = 4.0V and VA1 = 4.0V, VA2 = 0V 1 2, 3 LIMITS -55oC to +125oC +25oC -55oC to +125oC +25oC -55oC to +125oC +25oC -55oC to +125oC TABLE 1. HS-306RH/307RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V PARAMETER SYMBOL “Switch On” Resistance +RDS +RDS Leakage Current Into the Source Terminal of an “Off” Switch +IS(OFF) -IS(OFF) Leakage Current into the Drain Terminal of an “Off” Switch +ID(OFF) -ID(OFF) Leakage Current from an “On” Driver Into the Switch (Drain and Source) +ID(ON) -ID(ON) Low Level Input Address Current High Level Input Address Current IAL IAH CONDITIONS VD = 10V, IS = -10mA, S1/S2/S3/S4 VD = -10V, IS = 10mA, S1/S2/S3/S4 VS = +14V, VD = -14V, S1/S2/S3/S4 VS = -14V, VD = +14V, S1/S2/S3/S4 VS = -14V, VD = +14V, S1/S2/S3/S4 VS = +14V, VD = -14V, S1/S2/S3/S4 VS = VD = +14V, S1/S2/S3/S4 VS = VD = -14V, S1/S2/S3/S4 All Channels VA = 3.5V All Channels VA = 11V GROUP A SUBGROUPS LIMITS TEMPERATURE MIN MAX UNITS 1 +25oC - 50 Ω 2, 3 -55oC to +125oC - 75 Ω 1 +25oC - 50 Ω 2, 3 -55oC to +125oC - 75 Ω 1 +25oC -2 2 nA 2, 3 -55oC to +125oC -100 100 nA 1 +25oC -2 2 nA 2, 3 -55oC to +125oC -100 100 nA 1 +25oC -2 2 nA 2, 3 -55oC to +125oC -100 100 nA 1 +25oC -2 2 nA 2, 3 -55oC to +125oC -100 100 nA 1 +25oC -2 2 nA 2, 3 -55oC to +125oC -100 100 nA 1 +25oC -2 2 nA 2, 3 -55oC to +125oC -100 100 nA 1 +25oC -1 1 µA 1, 2 -55oC to +125oC -1 1 µA 1 +25oC -1 1 µA 1, 2 -55oC to +125oC -1 1 µA Spec Number 5 518526 Specifications HS-3XXRH/883S TABLE 1. HS-306RH/307RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V (Continued) PARAMETER SYMBOL Positive Supply Current I(+) CONDITIONS All Channels VA = 0V All Channels VA = 15V Negative Supply Current I(-) All Channels VA = 0V All Channels VA = 15V GROUP A SUBGROUPS LIMITS TEMPERATURE MIN MAX UNITS 1 +25oC - 10 µA 2, 3 -55oC to +125oC - 100 µA 1 +25oC - 10 µA 2, 3 -55oC to +125oC - 100 µA 1 +25oC -10 - µA 2, 3 -55oC to +125oC -100 - µA 1 +25oC -10 - µA 2, 3 -55oC to +125oC -100 - µA TABLE 2. HS-302RH/303RH/384RH/390RH/883S AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0V PARAMETER SYMBOL Break-Before-Make Time Delay (HS-303RH & 390RH Only) TOPEN Switch Turn “On” Time TON Switch Turn “Off” Time TOFF CONDITIONS RL = 300Ω, VS = +3V, VAH = 5V RL = 300Ω, VS = +3V RL = 300Ω, VS = +3V GROUP A SUBGROUPS LIMITS TEMPERATURE MIN MAX UNITS 9 +25oC 30 150 ns 10, 11 -55oC to +125oC - 300 ns 9 +25oC - 300 ns 10, 11 -55oC to +125oC - 500 ns 9 +25oC - 250 ns 10, 11 -55oC to +125oC - 450 ns TABLE 2. HS-306RH/307RH/883S AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +15.0V, VAL = 0V PARAMETER SYMBOL Break-Before-Make Time Delay (HS-307RH Only) TOPEN Switch Turn “On” Time TON Switch Turn “Off” Time TOFF CONDITIONS RL = 300Ω, VS = +3V RL = 300Ω, VS = +3V RL = 300Ω, VS = +3V GROUP A SUBGROUPS LIMITS TEMPERATURE MIN MAX UNITS 9 +25oC 30 150 ns 10, 11 -55oC to +125oC - 300 ns 9 +25oC - 300 ns 10, 11 -55oC to +125oC - 500 ns 9 +25oC - 250 ns 10, 11 -55oC to +125oC - 450 ns Spec Number 6 518526 Specifications HS-3XXRH/883S TABLE 3. HS-302RH/303RH/306RH/307RH/384RH/390RH/883S ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1) Unless Otherwise Specified: HS-302RH/303RH/384RH/390RH/883S V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0V HS-306RH/307RH/883S V- = -15V, V+ = +15V, VAH = +15.0V, VAL = 0V PARAMETER Switch Input Capacitance Driver Input Capacitance SYMBOL CIS(OFF) CC1 CC2 Switch Output Off Isolation Crosstalk Charge Transfer COS VISO VCR VCTE (NOTE 1) CONDITIONS LIMITS TEMPERATURE MIN MAX UNITS Measured Source to GND +25oC - 28 pF VA = 0V +25oC - 10 pF VA = 15V +25oC - 10 pF Measured Drain to GND +25oC - 28 pF VGEN = 1Vp-p, f = 1MHz +25oC 40 - dB VGEN = 1Vp-p, f = 1MHz +25oC 40 - dB VS = GND, CL = 0.01µF +25oC - 15 mV NOTE:1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. TABLE 4. HS-302RH/303RH/384RH/390RH/883S DC POST 100K RAD (Si) ELECTRICAL CHARACTERISTICS Tested Per Mil-Std-883. Unless Otherwise Specified: HS-302RH/303RH/384RH/390RH/883S V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V LIMITS PARAMETER SYMBOL CONDITIONS TEMPERATURE MIN MAX UNITS +RDS VD = 10V, IS = -10mA, S1/S2/S3/S4 +25oC - 60 Ω -RDS VD = -10V, IS = 10mA, S1/S2/S3/S4 +25oC - 60 Ω Leakage Current Into the Source Terminal of an “Off” Switch +IS(OFF) VS = +14V, VD = -14V, S1/S2/S3/S4 +25oC -100 100 nA -IS(OFF) VS = -14V, VD = +14V, S1/S2/S3/S4 +25oC -100 100 nA Leakage Current into the Drain Terminal of an “Off” Switch +ID(OFF) VS = -14V, VD = +14V, S1/S2/S3/S4 +25oC -100 100 nA -ID(OFF) VS = +14V, VD = -14V, S1/S2/S3/S4 +25oC -100 100 nA Leakage Current from an “On” Driver Into the Switch (Drain & Source) -ID(ON) VS = VD = +14V, S1/S2/S3/S4 +25oC -100 100 nA -ID(ON) VS = VD = -14V, S1/S2/S3/S4 +25oC -100 100 nA All Channels VA = 0.8V +25oC - 100 µA VA1 = 0V, VA2 = 4.0V and VA1 = 4.0V, VA2 = 0V +25oC - 1 mA All Channels VA = 0.8V +25oC -100 - µA VA1 = 0V, VA2 = 4.0V and VA1 = 4.0V, VA2 = 0V +25oC -100 - µA “Switch On” Resistance Positive Supply Current Negative Supply Current I(+) I(-) High Level Address Current IAH All Channels High +25oC -1 +1 µA Low Level Address Current IAL All Channels Low +25oC -1 +1 µA Break-Before-Make Time Delay (HS-303RH/883S and HS390RH/883S Only) TOPEN RL = 300Ω, VS = +3V, (Note 1) +25oC 2 300 ns Switch Turn-On Time TON RL = 300Ω, VS = +3V, (Note 2) +25oC - 500 ns Switch Turn-Off Time TOFF RL = 300Ω, VS = +3V, (Note 2) +25oC - 450 ns NOTES: 1. VAL = 0V; VAH = 5.0V 2. VAL = 0V; VAH = 4.0 Spec Number 7 518526 Specifications HS-3XXRH/883S TABLE 4. HS-306/307RH/883S DC POST 100K RAD (Si) ELECTRICAL CHARACTERISTICS Tested Per Mil-Std-883. Unless Otherwise Specified: HS-306RH/307RH/883S V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V LIMITS PARAMETER SYMBOL CONDITIONS TEMPERATURE MIN MAX UNITS +RDS VD = 10V, IS = -10mA, S1/S2/S3/S4 +25oC - 60 Ω -RDS VD = -10V, IS = 10mA, S1/S2/S3/S4 +25oC - 60 Ω Leakage Current Into the Source Terminal of an “Off” Switch +IS(OFF) VS = +14V, VD = -14V, S1/S2/S3/S4 +25oC -100 100 nA -IS(OFF) VS = -14V, VD = +14V, S1/S2/S3/S4 +25oC -100 100 nA Leakage Current into the Drain Terminal of an “Off” Switch +ID(OFF) VS = -14V, VD = +14V, S1/S2/S3/S4 +25oC -100 100 nA -ID(OFF) VS = +14V, VD = -14V, S1/S2/S3/S4 +25oC -100 100 nA Leakage Current from an “On” Driver Into the Switch (Drain & Source) -ID(ON) VS = VD = +14V, S1/S2/S3/S4 +25oC -100 100 nA -ID(ON) VS = VD = -14V, S1/S2/S3/S4 +25oC -100 100 nA All Channels VA = 0V +25oC - 100 µA All Channels VA = 15V +25oC - 1 mA All Channels VA = 0V +25oC -100 - µA All Channels VA = 15V +25oC -100 - µA “Switch On” Resistance Positive Supply Current I(+) Negative Supply Current I(-) High Level Address Current IAH All Channels High +25oC -1 +1 µA Low Level Address Current IAL All Channels Low +25oC -1 +1 µA TOPEN RL = 300Ω, VS = +3V, (Note 1) +25oC 2 300 ns TON RL = 300Ω, VS = +3V, (Note 1) +25oC - 500 ns RL = 300Ω, VS = +3V, (Note 1) +25oC - 450 ns Break-Before-Make Time Delay (HS-307RH/883S Only) Switch Turn-On Time Switch Turn-Off Time TOFF NOTE: 1. VAL = 0V; VAH = 15V TABLE 5. HS-302RH/303RH/384RH/390RH/883S DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS Guaranteed, Per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUPS LIMITS TEMPERATURE MIN MAX UNITS -5 5 Ω +RDS VD = 10V, IS = -10mA, S1/S2/S3/S4 1 +25oC -RDS VD = -10V, IS = 10mA, S1/S2/S3/S4 1 +25oC -5 5 Ω Leakage Current Into the Source Terminal of an “Off” Switch +IS(OFF) VS = +14V, VD = -14V, S1/S2/S3/S4 1 +25oC -2 2 nA -IS(OFF) VS = -14V, VD = +14V, S1/S2/S3/S4 1 +25oC -2 2 nA Leakage Current into the Drain Terminal of an “Off” Switch +ID(OFF) VS = -14V, VD = +14V, S1/S2/S3/S4 1 +25oC -2 2 nA -ID(OFF) VS = +14V, VD = -14V, S1/S2/S3/S4 1 +25oC -2 2 nA Leakage Current from an “On” Driver Into the Switch (Drain & Source) +ID(ON) VS = VD = +14V, S1/S2/S3/S4 1 +25oC -2 2 nA -ID(ON) VS = VD = -14V, S1/S2/S3/S4 1 +25oC -2 2 nA “Switch On” Resistance Spec Number 8 518526 Specifications HS-3XXRH/883S TABLE 5. HS-302RH/303RH/384RH/390RH/883S DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS Guaranteed, Per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V (Continued) PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUPS LIMITS TEMPERATURE MIN MAX UNITS -100 100 nA Low Level Input Address Current IAL All Channels VA = 0.8V 1 +25oC High Level Input Address Current IAH All Channels VA = 4.0V 1 +25oC -100 100 nA Positive Supply Current I(+) All Channels VA = 0.8V 1 +25oC -1 1 µA VA1 = 0V, VA2 = 4.0V and VA1 = 4.0V, VA2 = 0V 1 +25oC -0.1 0.1 mA All Channels VA = 0.8V 1 +25oC -1 1 µA 1 +25oC -1 1 µA Negative Supply Current I(-) VA1 = 0V, VA2 = 4.0V and VA1 = 4.0V, VA2 = 0V TABLE 5. HS-306RH/307RH/883S DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS Guaranteed, Per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V LIMITS PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS +RDS VD = 10V, IS = -10mA, S1/S2/S3/S4 1 +25oC -5 5 Ω -RDS VD = -10V, IS = 10mA, S1/S2/S3/S4 1 +25oC -5 5 Ω +IS(OFF) VS = +14V, VD = -14V, S1/S2/S3/S4 1 +25oC -2 2 nA -IS(OFF) VS = -14V, VD = +14V, S1/S2/S3/S4 1 +25oC -2 2 nA +ID(OFF) VS = -14V, VD = +14V, S1/S2/S3/S4 1 +25oC -2 2 nA -ID(OFF) VS = +14V, VD = -14V, S1/S2/S3/S4 1 +25oC -2 2 nA Leakage Current from an “On” Driver Into the Switch (Drain & Source) +ID(ON) VS = VD = +14V, S1/S2/S3/S4 1 +25oC -2 2 nA VS = VD = -14V, S1/S2/S3/S4 1 +25oC -2 2 nA Low Level Input Address Current IAL All Channels VA = 3.5V 1 +25oC -100 100 nA High Level Input Address Current IAH All Channels VA = 11V 1 +25oC -100 100 nA Positive Supply Current I(+) All Channels VA = 0V 1 +25oC -1 1 µA All Channels VA = 15V 1 +25oC -1 1 µA All Channels VA = 0V 1 +25oC -1 1 µA All Channels VA = 15V 1 +25oC -1 1 µA “Switch On” Resistance Leakage Current Into the Source Terminal of an “Off” Switch Leakage Current into the Drain Terminal of an “Off” Switch Negative Supply Current -ID(ON) I(-) Spec Number 9 518526 Specifications HS-3XXRH/883S TABLE 6. APPLICABLE SUBGROUPS GROUP A SUBGROUPS CONFORMANCE GROUPS METHOD TESTED RECORDED Initial Test 100%/5004 1, 7, 9 1, (Note 2) Interim Test 100%/5004 1, 7, 9, Deltas 1, Deltas, (Note 2) PDA 100%/5004 1, 7, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample/5005 1, 7, 9 Group D Sample/5005 1, 7, 9 Group E, Subgroup 2 Sample/5005 1, 7 Group A (Note 1) Group B 1, 2, 3, Deltas, (Note 2) NOTES: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. 2. Table 5 parameters on.y. Spec Number 10 518526 HS-302RH/303RH/306RH/307RH/384RH/390RH/883S Intersil Space Level Product Flow Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) 100% Interim Electrical Test (T1) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% PDA, Method 5004 (Note 1) 100% Delta Calculation (T0-T1) 100% Nondestructive Bond Pull, Method 2023 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 Sample - Wire Bond Pull Monitor, Method 2011 100% Interim Electrical Test (T2) Sample - Die Shear Monitor, Method 2019 or 2027 100% Delta Calculation (T0-T2) 100% Internal Visual Inspection, Method 2010, Condition A 100% PDA, Method 5004 (Note 1) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Final Electrical Test 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% Radiographic, Method 2012 (Note 2) 100% Fine/Gross Leak, Method 1014 100% External Visual, Method 2009 100% PIND, Method 2020, Condition A Sample - Group A, Method 5005 (Note 3) 100% External Visual Sample - Group B, Method 5005 100% Serialization Sample - Group D, Method 5005 100% Initial Electrical Test (T0) 100% Data Package Generation (Note 4) 100% Static Burn-In 1, Condition A or B, 72hrs. min., +125oC min. NOTES: 1. Failures from subgroup 1, 7 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 2. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 3. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 4. Data Package Contents: • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. • X-Ray report and film. Includes penetrometer measurements. • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). • Lot Serial Number Sheet (Good units serial number and lot number). • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. (See Table 6) • Group B and D attributes and/or Generic data. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. Spec Number 11 518526 HS-302RH/303RH/306RH/307RH/384RH/390RH/883S Irradiation Circuits V+ NC R1 R2 R3 R4 1 14 2 13 3 12 4 11 5 10 6 9 R8 S4 S3 S1 R2 R6 D2 D1 R1 R7 D4 D3 R3 R5 S2 R4 IN2 IN1 GND 8 7 1 14 2 13 3 12 4 11 5 10 6 9 S3 D3 D1 S1 GND V2 V1 S4 R8 D4 R7 D2 R6 S2 R5 IN2 IN1 V3 V- V+ NC V1 8 7 HS-302RH/303RH/883S HS-384RH/390RH/883S V3 V- V2 HS-306RH/307RH/883S NOTES: NOTES: 1. R1 - R8 = 10kΩ ± 5%, 1/4W 1. R1 - R8 = 10kΩ ± 5%, 1/4W 2. V1 = +15V ± 10% 2. V1 = +15V ± 10% 3. V2 = -15V ± 10% 3. V2 = -15V ± 10% 4. V3 = +5V ± 10% 4. V3 = +12V ± 10% 5. All irradiation testing is performed in the 14 pin package. 5. All irradiation testing is performed in the 14 pin package. Burn-In Circuits VA V- V+ R NC 1 14 C 2 13 3 12 R D R R R 1 16 2 15 3 14 V+ 4 13 5 12 6 11 7 10 8 9 VA -V D C D C R 4 11 5 10 6 9 7 8 R R +V VC D STATIC CONFIGURATION HS-302RH/303RH/306RH/307RH/883S STATIC CONFIGURATION HS-384RH/390RH/883S NOTES: NOTES: 1. R = 10KΩ ± 5%, 1/4W (4 per position) 1. R = 10KΩ ± 5%, 1/4W (4 per position) 2. C = 0.01µF minimum (per position) or 0.1µF minimum per row 2. C = 0.01µF minimum (per position) or 0.1µF minimum per row 3. D = IN4002 (or equivalent) 3. D = IN4002 (or equivalent) 4. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V 4. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V 5. VA = +15.5V ± 0.5V for 306RH/307RH 5. VA = +5.5V ± 0.5V 6. VA = +5.5V ± 0.5V for 302RH/303RH Spec Number 12 518526 HS-302RH/303RH/306RH/307RH/384RH/390RH/883S Burn-In Circuits (Continued) F V- F V- V+ NC 1 14 2 NC V+ C 1 2 13 3 12 R R 12 4 11 4 11 5 10 5 10 6 9 6 9 7 8 7 8 R R V- D R 3 R V+ 14 C D 13 R V+ R VC C D DYNAMIC CONFIGURATION HS-302RH/303RH/883S D DYNAMIC CONFIGURATION HS-306RH/307RH/883S NOTES: NOTES: 1. R = 10KΩ ± 5%, 1/4W (4 per position) 1. R = 10KΩ ± 5%, 1/4W (4 per position) 2. C = 0.01µF minimum (per position) or 0.1µF minimum per row 2. C = 0.01µF minimum (per position) or 0.1µF minimum per row 3. D = IN4002 (or equivalent) 3. D = IN4002 (or equivalent) 4. F = 100kHz square wave, 50% duty cycle, VL = 0.8V max., VH = 5.5V ± 0.5V 4. F = 100kHz square wave, 50% duty cycle, VL = 0.8V max., VH = 14V ± 1V 5. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V 5. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V R 1 16 2 15 3 14 F R R 4 13 5 12 6 11 7 10 8 9 -V D C D C +V R DYNAMIC CONFIGURATION HS-384RH/390RH/883S NOTES: 1. R = 10KΩ ± 5%, 1/4W (4 per position) 2. C = 0.01µF minimum (per position) or 0.1µF minimum per row 3. D = IN4002 (or equivalent) 4. F = 100kHz square wave, 50% duty cycle, VL = 0.8V max., VH = +5.5V ±0.5V 5. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V Spec Number 13 518526 HS-302RH/303RH/306RH/307RH/384RH/390RH/883S Test Circuits SWITCH TYPE VINH HS-302RH/303RH/384RH/390RH/883S 4V HS-306RH/307RH/883S 15V V+ +15V LOGIC “1” = SWITCH ON VO VS = +3V RL 300Ω VINH LOGIC INPUT SWITCH OUTPUT 50% VS LOGIC INPUT V-15V GND 50% 0V 90% 10% 0V tON SWITCH OUTPUT tOFF FIGURE 1. SWITCHING TEST CIRCUIT (tON, tOFF) SWITCH TYPE VINH HS-303RH/390RH/883S 5V HS-307RH/883S 15V LOGIC “1” = SWITCH ON V+ +15V D1 VS1 = +3V LOGIC INPUT 0V OUT 1 D2 VS2 = +3V RL1 = RL2 = 300Ω VINH OUT 2 RL2 LOGIC INPUT RL1 0V V-15V GND 50% 0V SWITCH OUTPUT 50% OUT 1 OUT 2 50% 50% tBBM tBBM FIGURE 2. BREAK-BEFORE-MAKE TEST CIRCUIT (tBBM) VA VB D S ID(OFF) 10mA ± ± ±10V ID(ON) RON = VB - VA ± 10mA FIGURE 3. ON RESISTANCE TEST CIRCUIT (RON) IS(OFF) D A S A ±14V 14V A ±14V FIGURE 4. ON LEAKAGE CURRENT TEST CIRCUIT (IDON) FIGURE 5. OFF LEAKAGE CURRENT TEST CIRCUIT (ISOFF, IDOFF) Spec Number 14 518526 HS-302RH/303RH/306RH/307RH/384RH/390RH/883S Metallization Topology WORST CASE CURRENT DENSITY: 1.732e05 A/cm2 DIE DIMENSIONS: Die Size: 2130 x 1930µm Die Thickness: 11 ±1 mils SUBSTRATE POTENTIAL: Unbiased PROCESS: DI Linear Metal Gate CMOS METALLIZATION: Type: Al, 12.5kÅ ± 2kÅ Back: Gold GLASSIVATION: Type: SiO2 Thickness: 8kÅ ± 1kÅ Metallization Mask Layout S4 V+ S3 HS-302RH/303RH/306RH/307RH/883S D1 D2 S1 S2 IN1 IN2 NC V- D4 GND D3 IN1 S1 D1 D3 HS-384RH/390RH/883S S3 VGND S4 IN2 S2 D2 D4 V+ Spec Number 15 518526 HS-302RH/303RH/306RH/307RH/384RH/390RH/883S All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Spec Number 16