95813

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Add paragraph 3.1.1 and appendix A for microcircuit die.
Changes in accordance with N.O.R. 5962-R168-96.
96-08-01
R. MONNIN
B
Make changes to boilerplate and add device class T. - ro
98-12-04
R. MONNIN
C
Drawing updated to reflect current requirements. - gt
03-01-06
R. MONNIN
D
Add device type 04. Delete dose rate upset testing. - ro
06-12-12
R. MONNIN
E
Make limit changes to the “Supply voltage between –V and ground” parameter
as specified under paragraph 1.3. - ro
07-02-27
J. RODENBECK
F
Add device type 05. - ro
08-06-19
R. HEBER
G
Corrected device types 04 and 05 technology from CMOS to BiCMOS.
Add BiCMOS device types 06, 07, and 08. Delete latch up data from
paragraph 1.5, paragraph 4.4.4.3 dose rate induced latchup testing, and
paragraph 4.4.4.4 dose rate burnout. Delete table III and references to device
class M requirements. - ro
13-03-22
C. SAFFLE
REV
SHEET
REV
G
G
G
G
G
G
G
G
G
G
G
G
G
G
SHEET
15
16
17
18
19
20
21
22
23
24
25
26
27
28
REV STATUS
REV
G
G
G
G
G
G
G
G
G
G
G
G
G
G
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
SANDRA ROONEY
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
SANDRA ROONEY
APPROVED BY
MICHAEL A. FRYE
DRAWING APPROVAL DATE
95-11-09
REVISION LEVEL
G
MICROCIRCUIT, LINEAR RADIATION HARDENED
CMOS, DUAL SPDT ANALOG SWITCHES,
MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-95813
1 OF 28
5962-E143-12
1. SCOPE
1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space
application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and
lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation
Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the
manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended
application.
1.2 PIN. The PIN is as shown in the following example:
5962
R
Federal
stock class
designator
\
95813
RHA
designator
(see 1.2.1)
/
01
V
C
C
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
03
04
05
06
07
08
Generic number
Circuit function
HS303RH
HS307RH
HS390RH
HS303ARH
HS303BRH
HS303AEH
HS303BEH
HS303CEH
Radiation hardened DI, dual SPDT CMOS switch
Radiation hardened DI, dual SPDT CMOS switch
Radiation hardened DI, dual SPDT CMOS switch
Radiation hardened DI, dual SPDT BiCMOS switch
Radiation hardened DI, dual SPDT BiCMOS switch
Radiation hardened DI, dual SPDT BiCMOS switch
Radiation hardened DI, dual SPDT BiCMOS switch
Radiation hardened DI, dual SPDT BiCMOS switch
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Q, V
T
Device requirements documentation
Certification and qualification to MIL-PRF-38535
Certification and qualification to MIL-PRF-38535 with performance as specified
in the device manufacturers approved quality management plan.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
2
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
C
E
X
Y
Descriptive designator
Terminals
Package style
CDIP2-T14
CDIP2-T16
CDFP3-F14
CDFP4-F16
14
16
14
16
Dual-in-line
Dual-in-line
Flat package
Flat package
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V.
1.3 Absolute maximum ratings. 1/
Supply voltage between +V and -V :
Device types 01, 02, 03 .....................................................................................
Device types 04, 05, 06, 07, and 08....................................................................
Supply voltage between +V and ground :
Device types 01, 02, 03 .....................................................................................
Device types 04, 05, 06, 07, and 08....................................................................
Supply voltage between -V and ground :
Device types 01, 02, 03 .....................................................................................
Device types 04, 05, 06, 07, and 08....................................................................
Digital input overvoltage :
+VA .......................................................................................................................
44 V
35 V
22 V
17.5 V
-22 V
-17.5 V
+VSUPPLY + 4 V
-VA ........................................................................................................................ -VSUPPLY - 4 V
Analog input overvoltage :
+VS ....................................................................................................................... +VSUPPLY + 1.5 V
-VS ........................................................................................................................ -VSUPPLY - 1.5 V
Continuous current, S or D ....................................................................................... 10 mA
Peak current, S or D
(pulsed at 1 ms, 10 percent duty cycle max) ......................................................... 40 mA
Storage temperature range ....................................................................................... -65°C to +150°C
Maximum package power dissipation at 125°C (PD) : 2/
Case outlines C and E .......................................................................................... 0.71 W
Case outlines X and Y .......................................................................................... 0.48 W
Thermal resistance, junction-to-case (θJC):
Case outlines C and E .......................................................................................... 19°C/W
Case outlines X and Y .......................................................................................... 17°C/W
Thermal resistance, junction-to-ambient (θJA):
Case outlines C and E .......................................................................................... 70°C/W
Case outlines X and Y .......................................................................................... 105°C/W
Lead temperature (soldering, 10 seconds) ............................................................... +300°C
Junction temperature (TJ) ......................................................................................... +175°C
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ If device power exceeds package dissipation capacity, provide heat sink or derate linearly (the derating is based on θJA)
at the following rates:
Case outlines C and E .............................................................................................. 14.3 mW/°C
Case outlines X and Y ............................................................................................... 9.5 mW/°C
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
3
1.4 Recommended operating conditions.
Operating supply voltage (±VSUPPLY) :
Device types 01, 02, 03, 04, 06, and 08 ................................................................ ±15 V
Device type 05 and 07 .......................................................................................... ±12 V
Ambient operating temperature range (TA) .............................................................. -55°C to +125°C
1.5 Radiation features
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s) :
Device types 01, 02, 03 .........................................................................................
Device types 04 and 05 .........................................................................................
Device types 06 and 07 ………………………………………………. ........................
Device types 08 ………………………………………………. ....................................
> 100 krads(Si) 3/
300 krads(Si) 4/
300 krads(Si) 5/
100 krads(Si) 6/
Maximum total dose available (dose rate ≤ .010 rad(Si)/s):
Device type 06, 07, and 08 .................................................................................... 50 krads(Si) 5/ 6/
Single event latch-up (SEL) ...................................................................................... No latch up 7/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.dla.mil/quicksearch/ or from the Standardization Document
Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
______
3/ Device types 01, 02, and 03 radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si).
4/
Device types 04 and 05 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate
effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in
MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si).
5/
Device types 06 and 07 radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) and condition D to a
maximum total dose of 50 krads(Si).
6/
Device type 08 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in
MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si) and condition D to a maximum total
dose of 50 krads(Si).
7/
Devices use dielectrically isolated (DI) technology and latch up is physically not possible.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
4
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q, T and V.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth table. The truth table shall be as specified on figure 2.
3.2.4 Timing diagrams. The timing diagrams shall be as specified on figure 3.
3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as required
in MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535
appendix A shall be provided with each lot of microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
5
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
1
01, 02,
Max
50
2,3
03, 08
75
Min
“Switch on” resistance
+RDS
VD = 10 V, IS = -10 mA
S1/S2/S3/S4
M,D,P,L,R 2/
1
1
VD = 10 V, IS = -10 mA
S1/S2/S3/S4
M,D,P,L,R,F 2/
S1/S2/S3/S4
M,D,P,L,R,F 2/
-RDS
VD = -10 V, IS = 10 mA
S1/S2/S3/S4
M,D,P,L,R 2/
M,D,P,L,R,F 2/
S1/S2/S3/S4
M,D,P,L,R,F 2/
source terminal of an
VS = +14 V, VD = -14 V
S1/S2/S3/S4
M,D,P,L,R 2/
“OFF” switch
60
05, 07
60
2,3
85
1
70
1
01, 02,
50
2,3
03, 08
75
60
04, 06
75
1
60
05, 07
M,D,P,L,R,F 2/
85
1
70
1
01, 02,
-2
+2
2,3
03
-100
+100
-100
+100
-10
+10
2,3
-100
+100
1
-100
+100
-10
+10
2,3
-100
+100
1
-100
+100
-100
+100
2,3
-150
+150
1
-150
+150
-1
+1
2,3
-20
+20
1
-20
+20
1
3/
VD = -V + 1 V, S1/S2/S3/S4
M,D,P,L,R,F 2/
1
VS = +14 V, VD = -14 V
S1/S2/S3/S4
M,D,P,L,R 2/
1
VS = +15 V, VD = -15 V
S1/S2/S3/S4
M,D,P,L,R 2/
60
2,3
1
S1/S2/S3/S4
50
2,3
1
VS = +14 V, VD = -14 V 3/
VS = +V - 1 V,
1
1
VD = -10 V, IS = 10 mA
+IS(OFF)
50
75
1
S1/S2/S3/S4
Leakage current into the
04, 06
1
VD = -10 V, IS = 10 mA
Ω
60
2,3
1
VD = 10 V, IS = -10 mA
Unit
04, 06
05, 07
08
08
nA
µA
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
6
TABLE I. Electrical performance characteristics - Continued.
Test
Leakage current into the
Symbol
-IS(OFF)
source terminal of an
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Min
Max
1
01, 02,
-2
+2
2,3
1
03
-100
-100
+100
+100
1
04, 06
-10
+10
2,3
-100
+100
1
-100
+100
-10
+10
2,3
-100
+100
1
-100
+100
-100
+100
2,3
-150
+150
1
-150
+150
-1
+1
2,3
-20
+20
1
-20
+20
VS = -14 V, VD = +14 V
S1/S2/S3/S4
M,D,P,L,R 2/
“OFF” switch
VS = -14 V, VD = +14 V 3/
S1/S2/S3/S4
M,D,P,L,R,F 2/
VS = -V + 1 V,
1
3/
VD = +V - 1 V, S1/S2/S3/S4
M,D,P,L,R,F 2/
1
VS = -14 V, VD = +14 V
S1/S2/S3/S4
M,D,P,L,R 2/
1
VS = -15 V, VD = +15 V
S1/S2/S3/S4
M,D,P,L,R 2/
Leakage current into the
drain terminal of an
+ID(OFF)
VD = -14 V, VS = +14 V
S1/S2/S3/S4
M,D,P,L,R 2/
“OFF” switch
08
08
01, 02,
-2
+2
2,3
03
-100
+100
-100
+100
-10
+10
2,3
-100
+100
1
-100
+100
-10
+10
2,3
-100
+100
1
-100
+100
-100
+100
2,3
-150
+150
1
-150
+150
-1
+1
2,3
-20
+20
1
-20
+20
1
S1/S2/S3/S4 3/
M,D,P,L,R,F 2/
1
3/
VD = -V + 1 V, S1/S2/S3/S4
M,D,P,L,R,F 2/
1
VD = -14 V, VS = +14 V
S1/S2/S3/S4
M,D,P,L,R 2/
1
VD = -15 V, VS = +15 V
S1/S2/S3/S4
M,D,P,L,R 2/
Unit
1
1
VD = -14 V, VS = +14 V
VS = +V - 1 V,
05, 07
Limits
04, 06
05, 07
08
08
nA
µA
nA
µA
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
7
TABLE I. Electrical performance characteristics - Continued.
Test
Leakage current into the
Symbol
-ID(OFF)
drain terminal of an
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Min
Max
1
01, 02,
-2
+2
2,3
1
03
-100
-100
+100
+100
1
04, 06
-10
+10
2,3
-100
+100
1
-100
+100
-10
+10
2,3
-100
+100
1
-100
+100
-100
+100
2,3
-150
+150
1
-150
+150
-1
+1
2,3
-20
+20
1
-20
+20
VD = +14 V, VS = -14 V
S1/S2/S3/S4
M,D,P,L,R 2/
“OFF” switch
VD = +14 V, VS = -14 V 3/
S1/S2/S3/S4
M,D,P,L,R,F 2/
VS = -V + 1 V,
1
3/
VD = +V - 1 V, S1/S2/S3/S4
M,D,P,L,R,F 2/
1
VD = +14 V, VS = -14 V
S1/S2/S3/S4
M,D,P,L,R 2/
1
VD = +15 V, VS = -15 V
S1/S2/S3/S4
M,D,P,L,R 2/
Leakage current from an
“ON” driver into the
+ID(ON)
VD = VS = +14 V,
S1/S2/S3/S4
M,D,P,L,R 2/
switch (Drain and
08
08
01, 02,
-2
+2
2,3
03
-100
+100
-100
+100
-10
+10
2,3
-100
+100
1
-100
+100
-10
+10
2,3
-100
+100
1
-100
+100
-20
+20
2,3
-100
+100
1
-100
+100
1
S1/S2/S3/S4
M,D,P,L,R,F 2/
1
VD = VS = +V – 1 V,
S1/S2/S3/S4
M,D,P,L,R,F 2/
1
VD = VS = +14 V,
S1/S2/S3/S4
M,D,P,L,R 2/
Unit
1
1
VD = VS = +14 V,
Source)
05, 07
Limits
04, 06
05, 07
08
nA
µA
nA
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
8
TABLE I. Electrical performance characteristics - Continued.
Test
Leakage current from an
Symbol
-ID(ON)
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
1
01, 02,
Min
-2
Max
+2
2,3
03
-100
+100
-100
+100
-10
+10
2,3
-100
+100
1
-100
+100
-10
+10
2,3
-100
+100
1
-100
+100
-20
+20
2,3
-100
+100
1
-100
+100
VD = VS = -14 V,
S1/S2/S3/S4
“ON” driver into the
M,D,P,L,R 2/
switch (Drain and
1
1
VD = VS = -14 V,
Source)
S1/S2/S3/S4
M,D,P,L,R,F 2/
1
VD = VS = -V + 1 V,
S1/S2/S3/S4
M,D,P,L,R,F 2/
VD = VS = +14 V,
1
S1/S2/S3/S4
M,D,P,L,R 2/
Low level input address
IAL
current
08
1,2,3
01, 03,
-1
+1
1
08
-1
+1
All channels VA = 3.5 V
1,2,3
02
-1
+1
-1
+1
1
All channels VA = 0.8 V
M,D,P,L,R,F 2/
IAH
05, 07
Unit
All channels VA = 0.8 V
M,D,P,L,R 2/
M,D,P,L,R 2/
High level input address
04, 06
Limits
All channels VA = 4.0 V
M,D,P,L,R 2/
current
All channels VA = 11 V
M,D,P,L,R 2/
1,2,3
04, 05,
-1
+1
1
06, 07
-1
+1
1,2,3
01,03,
-1
+1
1
08
-1
+1
1,2,3
02
-1
+1
-1
+1
1
All channels VA = 4.0 V
M,D,P,L,R,F 2/
1,2,3
04, 05,
-1
+1
1
06, 07
-1
+1
nA
µA
µA
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
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TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
1
01, 03
Limits
Min
Positive supply current
+I
All channels VA = 0.8 V
M,D,P,L,R 2/
All channels VA = 0.8 V
M,D,P,L,R,F 2/
100
1
100
1
04, 05,
100
2,3
06, 07
150
1
M,D,P,L,R 2/
Max
10
2,3
1
All channels VA = 0.8 V
Unit
150
08
100
2, 3
150
1
150
VA1 = 0 V, VA2 = 4.0 V
1
VA1 = 4.0 V, VA2 = 0 V
2,3
1
1
1
M,D,P,L,R 2/
01, 03
0.5
VA1 = 0 V, VA2 = 4.0 V
1
04, 05,
0.4
VA1 = 4.0 V, VA2 = 0 V
2,3
06, 07,
0.6
M,D,P,L,R,F 2/
1
1
VA1 = 4.0 V, VA2 = 0 V
2, 3
0.6
1
0.6
1
All channels VA = 0 V,
15 V
M,D,P,L,R
mA
08
0.4
02
10
2,3
100
1
100
1
100
µA
2/,
All channels, VA = 0 V
M,D,P,L,R
mA
0.6
VA1 = 0 V, VA2 = 4.0 V
M,D,P,L,R 2/
µA
2/,
All channels, VA = 15 V
See footnotes at end of table.
STANDARD
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TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
1
01, 03,
-10
2,3
1
08
-100
-100
Min
Negative supply current
-I
All channels VA = 0.8 V
M,D,P,L,R 2/
1
-10
VA1 = 4.0 V, VA2 = 0 V
2,3
-100
1
-100
1
All channels VA = 0 V,
15 V
M,D,P,L,R 2/
All channels VA = 0.8 V
M,D,P,L,R,F 2/
02
2,3
-100
1
-100
1
04, 05,
-10
2,3
06, 07
-100
-100
VA1 = 0 V, VA2 = 4.0 V
1
-10
VA1 = 4.0 V, VA2 = 0 V
2,3
-100
1
-100
Measured Source to GND
µA
-10
1
M,D,P,L,R,F 2/
CIS(OFF)
Max
VA1 = 0 V, VA2 = 4.0 V
M,D,P,L,R 2/
Switch input capacitance
Unit
4
All
28
pF
4
All
10
pF
4/ 5/
Driver input capacitance
Switch output
CC1
VA = 0 V
4/ 5/
CC2
VA = 15 V
4/ 5/
COS
Measured Drain to GND
10
4
All
28
pF
4/ 5/
4
All
40
dB
4/ 5/
4
All
40
dB
4
All
4/ 5/
VISO
Off isolation
VGEN = 1 VPP,
f = 1 MHz
VCR
Cross talk
VGEN = 1 VPP,
f = 1 MHz
Charge transfer error
VCTE
VS = GND,
4/ 5/
CL = 0.01 µF
15
mV
See footnotes at end of table.
STANDARD
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TABLE I. Electrical performance characteristics - Continued.
Test
Break-before-make
Symbol
tOPEN
time delay
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
RL = 300 Ω, VS = +3 V,
9
01, 03
VAH = 5.0 V, VAL = 0 V,
10,11
M,D,P,L,R 2/
see figure 3
9
M,D,P,L,R 2/
Max
150
02
2
300
30
50
10,11
VAH = 15.0 V, VAL = 0 V,
see figure 3
Min
30
Unit
ns
300
9
RL = 300 Ω, VS = +3 V,
Limits
300
9
RL = 300 Ω, VS = +3 V,
9
04, 05,
VAH = 5.0 V, VAL = 0 V,
10,11
06, 07
2
300
10
150
300
see figure 3
M,D,P,L,R,F 2/
9
RL = 300 Ω, VS = +3 V,
9
VAH = 5.0 V, VAL = 0 V,
10, 11
08
2
300
10
150
300
see figure 3
M,D,P,L,R 2/
Switch turn “ON” time
tON
9
2
300
RL = 300 Ω, VS = +3 V,
9
VAH = 4.0 V, VAL = 0 V,
10,11
500
9
500
see figure 3
M,D,P,L,R 2/
RL = 300 Ω, VS = +3 V,
9
VAH = 15.0 V, VAL = 0 V,
see figure 3
M,D,P,L,R 2/
01, 03
02
300
300
10,11
500
9
500
RL = 300 Ω, VS = +3 V,
9
04, 05,
375
VAH = 4.0 V, VAL = 0 V,
10,11
06, 07
500
see figure 3
M,D,P,L,R,F
2/
9
500
RL = 300 Ω, VS = +3 V,
9
VAH = 4.0 V, VAL = 0 V,
10,11
500
9
1000
see figure 3
M,D,P,L,R 2/
ns
08
375
See footnotes at end of table.
STANDARD
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
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TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 1/
-55°C ≤ TA ≤ +125°C
unless otherwise specified
Group A
subgroups
Device
type
Limits
Min
Switch turn “OFF” time
tOFF
9
VAH = 4.0 V, VAL = 0 V,
10,11
450
9
450
M,D,P,L,R 2/
RL = 300 Ω, VS = +3 V,
9
VAH = 15.0 V, VAL = 0 V,
see figure 3
M,D,P,L,R 2/
02
250
10,11
450
9
450
9
04, 05,
300
VAH = 4.0 V, VAL = 0 V,
10,11
06, 07
450
M,D,P,L,R,F 2/
9
450
RL = 300 Ω, VS = +3 V,
9
VAH = 4.0 V, VAL = 0 V,
10,11
450
9
1000
see figure 3
M,D,P,L,R,F 2/
ns
250
RL = 300 Ω, VS = +3 V,
see figure 3
1/
Max
RL = 300 Ω, VS = +3 V,
see figure 3
01,03
Unit
08
300
V- = -15 V and V+ = +15 V for device types 01, 02, 03, 04, 05, 06, 07, and 08.
V- = -12 V ±10% and V+ = +12 V ±10% for device type 05 and 07.
For device types 01, 03, 04, 05, 06, 07, and 08, VAH = +4 V and VAL = 0.8 V and for device type 02,
VAH = +11 V and VAL = 3.5 V.
2/
RHA device types 01, 02, and 03 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation.
However, device types 01, 02, and 03 are only tested at the R level in accordance with MIL-STD-883, method 1019,
condition A (see 1.5 herein).
RHA device types 04 and 05 supplied to this drawing will meet all levels M, D, P, L, R, and F of irradiation.
However, device types 04 and 05 are only tested at the F level in accordance with MIL-STD-883, method 1019,
condition A (see 1.5 herein).
RHA device types 06 and 07 supplied to this drawing will meet all levels M, D, P, L, R, and F of irradiation for condition A
and levels M, D, P, and L for condition D. However, device types 06, 07, and 08 are only tested at the F level in
accordance with MIL-STD-883, method 1019, condition A and tested at the L level in accordance with MIL-STD-883,
method 1019, condition D (see 1.5 herein).
RHA device type 08 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation for condition A and
levels M, D, P, and L for condition D. However, device type 08 is only tested at the R level in accordance with
MIL-STD-883, method 1019, condition A and tested at the L level in accordance with MIL-STD-883, method 1019,
condition D (see 1.5 herein).
Pre and post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation
electrical measurements for all RHA levels, TA = +25°C.
3/
For device types 04, 05, 06, and 07 as indicated by the test, switch voltage must be more than 1 V inside of the device
rails. For rail-to-rail operation, refer to device type 08.
4/
Tested initially and after any design changes which may affect these parameters.
5/
For device types 01, 03, 04, 05, 06, 07, and 08, VAL = 0 V and VAH = 4.0 V and for device type 02, VAL = 0 V and
VAH = 15 V.
STANDARD
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Case outlines
C and X
E and Y
Device types
01, 02 04, 05, 06, 07,
and 08
03
Terminal number
Terminal symbol
1
NC
D1
2
S3
NC
3
D3
D3
4
D1
S3
5
S1
S4
6
IN1
D4
7
GND
NC
8
V-
D2
9
IN2
S2
10
S2
IN2
11
D2
V+
12
D4
NC
13
S4
GND
14
V+
V-
15
---
IN1
16
---
S1
NC = No connections
FIGURE 1. Terminal connections.
LOGIC
SW1
SW3
SW2
SW4
0
OFF
ON
1
ON
OFF
FIGURE 2. Truth table.
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SWITCHING TEST CIRCUIT
NOTE: For device types 01, 03, 04, 05, 06, 07, and 08, VINH = +4 V. For device type 02, VINH = +15 V.
For device types 01, 02, 03, 04, 06, and 08, V- = -15 V and V+ = +15 V.
For device types 05 and 07, V- = -12 V ±10 % and V+ = +12 V ±10 %.
FIGURE 3. Timing diagram.
STANDARD
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BREAK-BEFORE-MAKE TEST CIRCUIT
NOTE: For device types 01, 03, 04, 05, 06, 07, and 08, VINH = +5 V. For device type 02, VINH = +15 V.
For device types 01, 02, 03, 04, 06, and 08, V- = -15 V and V+ = +15 V.
For device types 05 and 07, V- = -12 V ±10 % and V+ = +12 V ±10 %.
FIGURE 3. Timing diagram – Continued.
STANDARD
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DSCC FORM 2234
APR 97
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REVISION LEVEL
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q, and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan, including screening (4.2),
qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function as
described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the
device manufacturer’s QM plan including screening, qualification, and conformance inspection. The performance envelope and
reliability information shall be as specified in the manufacturer’s QM plan.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class T, screening shall be in
accordance with the device manufacturer’s Quality Management (QM) plan, and shall be conducted on all devices prior to
qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q, T and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
For device classes Q, T and V interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, Appendix B.
4.3 Qualification inspection for device classes Q, T and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Qualification inspection for device class T shall be in accordance with the device
manufacturer’s Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and
herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein. Inspections to be performed for device
class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1
through 4.4.4). Technology conformance inspection for class T shall be in accordance with the device manufacturer’s Quality
Management (QM) plan.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 5, 6, 7, and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.
c.
Subgroup 4 (CC1, CC2, COS, and CIS measurements) should be measured only for initial qualification and
after any process or design changes which may affect input or output capacitance.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.2 Additional criteria for device classes Q, T and V. The steady-state life test duration, test condition and test
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with
MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1005 of MIL-STD-883.
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TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class Q
Device
class V
Device
class T
As specified
in QM plan
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
1,9
1,9
1,2,3,9, 1/
10,11
1,2,3, 1/ 2/
9,10,11,∆
As specified
in QM plan
Group A test
requirements (see 4.4)
1,2,3,4,9, 3/
10,11
1,2,3,4, 3/
9,10,11
As specified
in QM plan
Group C end-point electrical
parameters (see 4.4)
1,2,3,9,10,11
1,2,3,9, 2/
10,11
As specified
in QM plan
1,9
1,9
As specified
in QM plan
1,9
1,9
As specified
in QM plan
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
1/ PDA applies to subgroup 1. For class V to subgroups 1, 9, and ∆.
2/ Delta limits (see table IIB) shall be required and the delta values shall be computed
with reference to the zero hour electrical parameters (see table I).
3/ Subgroup 4, if not tested, shall be guaranteed to the limits specified in table I.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End-point electrical
parameters shall be as specified in table IIA herein.
4.4.4.1 Group E inspection for device class T. For device class T, the RHA requirements shall be in accordance with the
class T radiation requirements of MIL-PRF-38535. End-point electrical parameters shall be as specified in table IIA herein.
4.4.4.2 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A for device types 01, 02, 03, 04, and 05 and as specified herein. Total dose irradiation testing shall be
performed in accordance with MIL-STD-883 method 1019, condition A and condition D for device types 06, 07, and 08 and as
specified herein.
4.4.4.2.1 Accelerated annealing test. Accelerated annealing tests shall be performed on all devices requiring a RHA level
greater than 5 krads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be
the pre-irradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after
any design or process changes which may affect the RHA response of the device.
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TABLE IIB. Burn-in delta parameters and group C delta parameters (+25°C).
Parameters
Switch on resistance
+RDS
-RDS
Leakage current into
the source terminal of
an “OFF” switch
+IS(OFF)
-IS(OFF)
Leakage current into
the drain terminal of an
“OFF” switch
+ID(OFF)
-ID(OFF)
Leakage current from
an “ON” driver into the
switch (drain and
source)
+ID(ON)
-ID(ON)
Low level input
address current
IAL
High level input
address current
IAH
I+
Positive supply
current
Delta limits
±5 Ω
All channels VA = 0.8 V
01, 02, 03, 04,
05, 06, 07
08
01, 02, 03, 04,
05, 06, 07
08
01, 02, 03, 04,
05, 06, 07
08
01, 02, 03, 04,
05, 06, 07
08
01, 02, 03, 04,
05, 06, 07
08
01, 02, 03, 04,
05, 06, 07
08
01, 02, 03, 04,
05, 06, 07
08
01, 02, 03, 04,
05, 06, 07
08
01, 03, 04, 05,
06, 07, 08
All channels VA = 3.5 V
02
±100 nA
All channels VA = 4.0 V
01, 03, 04, 05,
06, 07, 08
±100 nA
All channels VA = 11 V
02
±100 nA
All channels VA = 0.8 V
01,03
±1 µA
All channels VA = 0.8 V
04, 05, 06, 07,
08
±10 µA
VA1 = 4.0 V, VA2 = 0 V
01, 03, 04, 05,
06, 07, 08
±0.1 mA
All channels VA = 0 V
02
±1 µA
All channels VA = 15 V
02
±1 µA
All channels VA = 0.8 V
01, 03, 04, 05,
06, 07, 08
±1 µA
VA1 = 4.0 V, VA2 = 0 V
01, 03, 04, 05,
06, 07, 08
±1 µA
All channels VA = 0 V
02
±1 µA
All channels VA = 15 V
02
±1 µA
Conditions
Per table I
Per table I
VS = +14 V, VD = -14 V
VS = -14 V, VD = +14 V
Per table I
Per table I
Per table I
Per table I
VA1 = 0 V, VA2 = 4.0 V and
INegative supply
current
1/
Device type 1/
Symbol
VA1 = 0 V, VA2 = 4.0 V and
+10 Ω
±5 Ω
+10 Ω
±2 nA
±20 nA
±2 nA
±20 nA
±2 nA
±5 nA
±2 nA
±5 nA
±2 nA
±5 nA
±2 nA
±5 nA
±100 nA
Device type 04 conditions may be used for device type 05.
STANDARD
MICROCIRCUIT DRAWING
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COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
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REVISION LEVEL
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5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q, T and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q, T and V. Sources of supply for device classes Q, T and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein)
to DLA Land and Maritime -VA and have agreed to this drawing.
STANDARD
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DSCC FORM 2234
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APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95813
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
F
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
95813
/
04
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
02
03
04
05
06
07
08
HS-303RH
HS-307RH
HS-393RH
HS-303ARH
HS-303BRH
HS303AEH
HS303BEH
HS303CEH
Circuit function
Radiation hardened DI, dual SPST CMOS switch
Radiation hardened DI, dual SPST CMOS switch
Radiation hardened DI, dual SPST CMOS switch
Radiation hardened DI, dual SPST BiCMOS switch
Radiation hardened DI, dual SPST BiCMOS switch
Radiation hardened DI, dual SPDT BiCMOS switch
Radiation hardened DI, dual SPDT BiCMOS switch
Radiation hardened DI, dual SPDT BiCMOS switch
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
21
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95813
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01, 04, 05, 06, 07
02
03
08
A-1
A-2
A-3
A-4
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01, 04, 05, 06, 07
02
03
08
A-1
A-2
A-3
A-4
A.1.2.4.3 Interface materials.
Die type
Figure number
01, 04, 05, 06, 07
02
03
08
A-1
A-2
A-3
A-4
A.1.2.4.4 Assembly related information.
Die type
Figure number
01, 04, 05, 06, 07
02
03
08
A-1
A-2
A-3
A-4
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
A.1.5 Radiation features. See paragraph 1.5 herein for details.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
22
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95813
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.dla.mil/quicksearch/ or from the Standardization Document
Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figures A-1, A-2, A-3,
and A-4.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figures A-1, A-2, A-3, and A-4.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figures A-1, A-2, A-3,
and A-4.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figures A-1,
A-2, A-3, and A-4.
A.3.2.5 Truth table. The truth table shall be as defined in paragraph 3.2.3 herein.
A.3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.5 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
23
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95813
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table II herein. Group E tests and conditions are as specified in paragraphs 4.4.4, 4.4.4.1,
4.4.4.2, and 4.4.4.2.1 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and
Maritime -VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
24
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95813
Device types 01, 02
NOTE: Pad numbers reflect terminal numbers when placed in case outlines C and X (see figure 1).
Die physical dimensions.
Die size: 1930 microns x 2130 microns.
Die thickness: 11 ± 1 mils.
Interface materials.
Top metallization: Al 12.5 kÅ ± 2 kÅ
Backside metallization: Gold over polysilicon
Glassivation.
Type: Si02
Thickness: 8 kÅ ± 1 kÅ
Substrate: DI (dielectric isolation)
Assembly related information.
Substrate potential: Unbiased
Special assembly instructions: None
FIGURE A-1 / A-2. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
25
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95813
Device type 03
NOTE: Pad numbers reflect terminal numbers when placed in case outlines E and Y (see figure 1).
Die physical dimensions.
Die size: 2130 microns x 1930 microns.
Die thickness: 11 ± 1 mils.
Interface materials.
Top metallization: Al 12.5 kÅ ± 2 kÅ
Backside metallization: Gold over polysilicon
Glassivation.
Type: Si02
Thickness: 8 kÅ ± 1 kÅ
Substrate: DI (dielectric isolation)
Assembly related information.
Substrate potential: Unbiased
Special assembly instructions: None
FIGURE A-3. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
26
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95813
Device types 04, 05, 06, and 07
NOTE: Pad numbers reflect terminal numbers when placed in case outlines C and X (see figure 1).
Die physical dimensions.
Die size: 2690 microns x 5200 microns.
Die thickness: 19 ± 1 mils.
Interface materials.
Top metallization: Al Si Cu 16 kÅ ± 2 kÅ
Backside metallization: None
Glassivation.
Type: PSG
Thickness: 8 kÅ ± 1 kÅ
Substrate: DI (dielectric isolation)
Assembly related information.
Substrate potential: Unbiased
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
27
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-95813
Device type 08
NOTE: Pad numbers reflect terminal numbers when placed in case outlines C and X (see figure 1).
Die physical dimensions.
Die size: 2815 microns x 5325 microns.
Die thickness: 19 ± 1 mils.
Interface materials.
Top metallization: Al Si Cu 16 kÅ ± 2 kÅ
Backside metallization: None
Glassivation.
Type: PSG
Thickness: 8 kÅ ± 1 kÅ
Substrate: DI (dielectric isolation)
Assembly related information.
Substrate potential: Unbiased
Special assembly instructions: None
FIGURE A-4. Die bonding pad locations and electrical functions
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-95813
A
REVISION LEVEL
G
SHEET
28
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 13-03-22
Approved sources of supply for SMD 5962-95813 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962R9581301QCC
3/
HS1-303RH-8
5962R9581301QXC
3/
HS9-303RH-8
5962R9581301TCC
3/
HS1-303RH-T
5962R9581301TXC
3/
HS9-303RH-T
5962R9581301VCC
3/
HS1-303RH-Q
5962R9581301VXC
3/
HS9-303RH-Q
5962R9581301V9A
3/
HS0-303RH-Q
5962R9581302QCC
3/
HS1-307RH-8
5962R9581302QXC
3/
HS9-307RH-8
5962R9581302VCC
3/
HS1-307RH-Q
5962R9581302VXC
34371
HS9-307RH-Q
5962R9581302V9A
34371
HS0-307RH-Q
5962R9581303QEC
3/
HS1-390RH-8
5962R9581303QYC
3/
HS9-390RH-8
5962R9581303TEC
3/
HS1-390RH-T
5962R9581303TYC
3/
HS9-390RH-T
5962R9581303VEC
3/
HS1-390RH-Q
5962R9581303VYC
3/
HS9-390RH-Q
5962R9581303V9A
3/
HS0-390RH-Q
5962F9581304QCC
34371
HS1-303ARH-8
5962F9581304QXC
34371
HS9-303ARH-8
5962F9581304VCC
34371
HS1-303ARH-Q
5962F9581304VXC
34371
HS9-303ARH-Q
5962F9581304V9A
34371
HS0-303ARH-Q
1 of 2
STANDARD MICROCIRCUIT DRAWING BULLETIN - continued
DATE: 13-03-22
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962F9581305QCC
34371
HS1-303BRH-8
5962F9581305QXC
34371
HS9-303BRH-8
5962F9581305VCC
34371
HS1-303BRH-Q
5962F9581305VXC
34371
HS9-303BRH-Q
5962F9581305V9A
34371
HS0-303BRH-Q
5962F9581306VCC
34371
HS1-303AEH-Q
5962F9581306VXC
34371
HS9-303AEH-Q
5962F9581306V9A
34371
HS0-303AEH-Q
5962F9581307VCC
34371
HS1-303BEH-Q
5962F9581307VXC
34371
HS9-303BEH-Q
5962F9581307V9A
34371
HS0-303BEH-Q
5962R9581308VXC
34371
HS9-303CEH-Q
5962R9581308V9A
34371
HS0-303CEH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
3/ Not available from an approved source of supply.
Vendor CAGE
number
Vendor name
and address
34371
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035-6803
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
2 of 2