HS-1840RH/883S NS ESIG D NEW FOR or r at D E RH t Cente sc ND A E 0 r 4 M o M p m/t -18 ECO See HS ical Sup tersil.co R T n in NO ww. Tech our IL or w t c S Multiplexer ta September 1997 con -INTER 8 8 8 1 ® Features • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. Rad-Hard 16 Channel CMOS Analog with High-Z Analog Input Protection Pinouts HS1-1840RH/883S 28 PIN CERAMIC SIDEBRAZE DIP CASE OUTLINE D-10,COMPLIANT TO MIL-M-38510 PACKAGE TOP VIEW • Radiation Environment - Gamma Rate (γ) 1 x 108 RAD(Si)/s - Gamma Dose (γ) 2 x 105 RAD(Si) +VS 1 28 OUT NC 2 27 -VS NC 3 26 IN 8 IN 16 4 25 IN 7 • Fast Access Time 1000ns IN 15 5 24 IN 6 • High Analog Input Impedance 500MΩ During Power Loss (Open) IN 14 6 23 IN 5 IN 13 7 22 IN 4 IN 12 8 21 IN 3 IN 11 9 20 IN 2 IN 10 10 19 IN 1 • Low Power Consumption • Dielectrically Isolated Device Islands • Excellent In Hi-Rel Redundant Systems • Break-Before-Make Switching • No Latch-Up IN 9 11 18 ENABLE GND 12 17 ADDR A0 (+5VS) VREF 13 16 ADDR A1 ADDR A3 14 15 ADDR A2 Description The HS-1840RH/883S is a radiation hardened, monolithic 16 channel multiplexer constructed with the Intersil Linear Dielectric Isolation CMOS process. It is designed to provide a high input impedance to the analog source if device power fails (open) or the analog signal voltage inadvertently exceeds the supply rails during powered operation. Excellent for use in redundant applications, since the secondary device can be operated in a standby unpowered mode affording no additional power drain. More significantly, a very high impedance exists between the active and inactive devices preventing any interaction. One of sixteen channel selection is controlled by a 4-bit binary address plus an Enable-Inhibit input which conveniently controls the ON/OFF operation of several multiplexers in a system. All digital inputs have electrostatic discharge protection. The HS-1840RH/883S has been specifically designed to meet exposure to radiation environments. It is available in a 28 pin Ceramic Sidebraze dual-in-line package and 28 pin Ceramic Flatpack. It is guaranteed operational from -55oC to +125oC. HS9-1840RH/883S 28 PIN CERAMIC SIDEBRAZE FLATPACK CASE OUTLINE F-11A, COMPLIANT TO MIL-M-38510 PACKAGE TOP VIEW +VS 1 28 OUT NC 2 27 -VS NC 3 26 IN 8 IN 16 4 25 IN 7 IN 15 5 24 IN 6 IN 14 6 23 IN 5 IN 13 7 22 IN 4 IN 12 8 21 IN 3 IN 11 9 20 IN 2 IN 10 10 19 IN 1 IN 9 11 18 ENABLE GND 12 17 ADDR A0 (+5VS) VREF 13 16 ADDR A1 ADDR A3 14 15 ADDR A2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved 1 File Number 3022.1 HS-1840RH/883S Functional Diagram IN 1 A0 1 P A1 DIGITAL ADDRESS A2 OUT A3 16 EN P IN 16 ADDRESS INPUT BUFFER AND LEVEL SHIFTER DECODERS MULTIPLEX SWITCHES Truth Table A3 A2 A1 A0 EN “ON” CHANNEL X X X X H None L L L L L 1 L L L H L 2 L L H L L 3 L L H H L 4 L H L L L 5 L H L H L 6 L H H L L 7 L H H H L 8 H L L L L 9 H L L H L 10 H L H L L 11 H L H H L 12 H H L L L 13 H H L H L 14 H H H L L 15 H H H H L 16 2 Specifications HS-1840RH/883S Absolute Maximum Ratings Reliability Information Supply Voltage Between Pins 1 and 27 . . . . . . . . . . . . . . . . . . +40V +VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V -VSUPPLY to Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20V VREF to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Analog input Overvoltage: +VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+25V (Power On/Off) -VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V (Power On) Digital Input Overvoltage: +VEN, +VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VREF +4V -VEN, -VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND -4V Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . . .+275o Thermal Resistance . . . . . . . . . . . . . . . . . . θJA θJC Sidebraze Package . . . . . . . . . . . . . . . . . 83.1oC/W 19.1oC/W Flatpack Package . . . . . . . . . . . . . . . . . . 49.1oC/W 16.5oC/W Total Power Dissipation*: Sidebraze DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . 1600mW Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . 1400mW ESD Classification. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 * For DIP Derate 20.4mW/oC above TA = +95oC For Flatpack Derate 18.5mW/oC above TA = +95oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Supply Voltage (±VSUPPLY) . . . . . . . . . . . . . . . . . . . ±15V Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC VREF (Pin 13) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5V Logic Low Level (VAL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.8V Logic High Level (VAH). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.0V TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V PARAMETER SYMBOL Analog Signal Range VS Input Leakage Current, Address, or Enable Pins IAH IAL Leakage Current Into the Source Terminal of an “Off” Switch +IS(OFF) -IS(OFF) GROUP A SUBGROUPS CONDITIONS 7, 8A, 8B Measure Inputs Sequentially Ground All Unused Pins VAL = 0.8V, VAH = 4.0V VS = +10V, All Unused Inputs and Output = -10V, VEN = 4V VS = -10V, All Unused Inputs, Output = +10V, VEN = 4V Leakage Current into the Source Terminal of an “Off” Switch With Power “Off” +IS(OFF) Power Off V+, V-, VREF, A0, A1, A2, A3,A4, EN = GND, Unused Inputs Tied to GND, VS = +25V Leakage Current Into the Source Terminal of an “Off” Switch With Overvoltage Applied +IS(OFF) Overvoltage VS = +25V, VD = 0V, VEN = 4V All Unused Inputs Tied to GND -IS(OFF) Overvoltage Leakage Current Into the Drain Terminal of an “Off” Switch +ID(OFF) -ID(OFF) Leakage Current Into the Drain Terminal of an “Off” Switch With Overvoltage Applied LIMITS TEMPERATURE -55oC, +25oC, +125oC MIN MAX UNITS -5 +15 V 1, 2, 3 -55oC, +25oC, +125oC -1000 1000 nA 1 +25oC -10 10 nA 2, 3 +125oC,-55oC -100 100 nA 1 +25oC -10 10 nA o o 2, 3 +125 C, -55 C -100 100 nA 1 +25oC -50 50 nA -55oC -100 100 nA 1, 2, 3 -55oC, +25oC, +125oC -1000 1000 nA VS = -25V, VD = 0V, VEN = 4V All Unused Inputs Tied to GND 1, 2, 3 -55oC, +25oC, +125oC -1000 1000 nA VD = +10V, VEN = 4V All Unused Inputs = -10V 1 +25oC -10 10 nA -100 100 nA -10 10 nA +125 C, -55 C -100 100 nA VD = -10V, VEN = 4V All Unused Inputs = +10V 2, 3 2, 3 1 2, 3 +125oC, +125o C, -55 C +25o o o C o +ID(OFF) Overvoltage VS = +25V, Measure VD, VEN = 4V, All Unused Inputs to GND 1, 2, 3 -55o C, +25 C, +125oC -1000 1000 nA -ID(OFF) Overvoltage VS = -25V, Measure VD, All Unused Inputs to GND 1, 2, 3 -55oC, +25oC, +125oC -1000 1000 nA 3 o Specifications HS-1840RH/883S TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V PARAMETER Leakage Current from an “On” Driver into the Switch (Drain & Source) SYMBOL +ID(ON) -ID(ON) Switch On Resistance +15V R(ON) GROUP A SUBGROUPS CONDITIONS VS = +10V, VD = +10V, VEN = 0.8V All unused inputs = -10V VS = -10V, VD = -10V, VEN = 0.8V, All Unused Inputs = +10V LIMITS TEMPERATURE o 1 2, 3 +25 C +125 -55oC +25oC 1 2, 3 oC, o o +125 C, -55 C oC, MIN MAX UNITS -10 10 nA -100 100 nA -10 10 nA -100 100 nA +25oC, 50 1000 Ω VS = +15V, ID = -1mA, VEN = 0.8V 1, 2, 3 -55 -5V R(ON) VS = -5V, ID = +1mA, VEN = 0.8V 1, 2, 3 -55oC, +25oC, +125oC 50 4000 Ω +5V R(ON) VS = +5V, ID = -1mA, VEN = 0.8V 1, 2, 3 -55oC, +25oC, +125oC 50 2500 Ω +125oC Positive Supply Current I(+) VEN = 0.8V 1, 2, 3 -55oC, +25oC, +125oC - 0.5 mA Negative Supply Current I(-) VEN = 0.8V 1, 2, 3 -55oC, +25oC, +125oC -0.5 - mA Positive Standby Supply Current +ISBY VEN = 4.0V 1, 2, 3 -55oC, +25oC, +125oC - 0.5 mA Negative Standby Supply Current -ISBY VEN = 4.0V 1, 2, 3 -55oC, +25oC, +125oC -0.5 - mA TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V PARAMETER Break-Before-Make Time Delay Propagation Delay Times: Address Inputs to I/O Channels Enable to I/O SYMBOL TD CONDITIONS RL = 1000Ω, CL = 50pF TEMPERATURE MIN MAX UNITS 9 +25oC 25 - ns 5 - ns - 600 ns - 1000 ns - 600 ns - 1000 ns 10, 11 TON(A), TOFF(A) TON(EN), TOFF(EN) RL = 10KΩ,CL = 50pF 9 10, 11 RL = 1000Ω, CL = 50pF LIMITS GROUP A SUBGROUPS 9 10, 11 +125oC, -55oC o +25 C +125oC, -55oC +25oC o o +125 C, -55 C TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized At: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V, Unless Otherwise Specified LIMITS PARAMETER SYMBOL CONDITIONS NOTE TEMPERATURE o MIN MAX UNITS Capacitance Address Input CA +VS = -VS = 0V, f = 1MHz 1 +25 C - 7 pF Capacitance Channel Input CS(OFF) +VS = -VS = 0V, f = 1MHz 1 +25oC - 5 pF Capacitance Channel Output CD(OFF) TOFF(EN) +VS = -VS = 0V, f = 1MHz 1 +25oC - 50 pF VEN = 4.0V, f = 200kHz, CL = 7pF, RL = 1kΩ, VS = 3.0VRMS 1 +25oC 45 - dB Off Isolation VISO NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters and not directly tested. These parameters are characterized upon initial design and after major process and/or design changes. 4 Specifications HS-1840RH/883S TABLE 4. POST 200K RAD(Si) ELECTRICAL CHARACTERISTICS Tested, per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.5V, VAL = 0.5V PARAMETER SYMBOL GROUP A SUBGROUPS CONDITIONS LIMITS TEMPERATURE o MIN MAX UNITS Measure Inputs Sequentially, Ground All Unused Pins 1 +25 C -1000 1000 nA +IS(OFF) VS = +10V, All Unused Inputs & Output = -10V, VEN = 4.5V 1 +25oC -100 100 nA -IS(OFF) VS = -10V, All Unused Inputs & Output = +10V, VEN = 4.5V 1 +25oC -100 100 nA Leakage Current into the Source Terminal of an “Off” Switch With Power “Off” +IS(OFF) Power Off V+, V-, VREF, A0, A1, A2, A3, A4, EN = GND, Unused Inputs Tied to GND, VS = +25V 1 +25oC -100 100 nA Leakage Current Into the Source Terminal of an “Off” Switch With Overvoltage Applied +IS(OFF) Overvoltage VS = +25V, VD=0V, VEN=4.5V All Unused Inputs Tied to GND 1 +25oC -1500 1500 nA -IS(OFF) Overvoltage VS = -25V, VD=0V, VEN=4.5V All Unused Inputs Tied to GND 1 +25oC -1500 1500 nA Input Leakage Current, Address, or Enable Pins IAH IAL Leakage Current Into the Source Terminal of an “Off” Switch Leakage Current Into the Drain Terminal of an “Off” Switch +ID(OFF) VD = +10V, VEN = 4.5V All Unused Inputs = -10V 1 +25oC -100 100 nA -ID(OFF) VD = -10V, VEN = 4.5V All Unused Inputs = +10V 1 +25oC -100 100 nA Leakage Current Into the Drain Terminal of an “Off” Switch With Overvoltage Applied +ID(OFF) Overvoltage VS = +25V, Measure VD, VEN = 4.5V All Unused Inputs to GND 1 +25oC -1000 1000 nA -ID(OFF) Overvoltage VS = -25V, Measure VD, VEN = 4.5V All Unused Inputs to GND 1 +25oC -1000 1000 nA +ID(ON) VS = +10V, VD = +10V, VEN = 0.5V All Unused Inputs = -10V 1 +25oC -100 100 nA -ID(ON) VS = -10V, VD = -10V, VEN = 0.5V All Unused Inputs = +10V 1 +25oC -100 100 nA VS = +15V, ID = -1mA, VEN = 0.5V 1 +25oC 50 1000 Ω Leakage Current from an “On” Driver into the Switch (Drain & Source) Switch On Resistance +15V R(ON) -5V R(ON) +5V R(ON) VS = -5V, ID = +1mA, VEN = 0.5V VS = +5V, ID = -1mA, VEN = 0.5V o 1 +25 C 50 4000 Ω 1 +25oC 50 2500 Ω - 0.50 mA Positive Supply Current I(+) VEN = 0.5V 1 +25o Negative Supply Current I(-) VEN = 0.5V 1 +25oC -0.50 - mA Positive Standby Supply Current +I(SBY) VEN = 4.5V 1 +25oC - 0.50 mA Negative Standby Supply Current -I(SBY) VEN = 4.5V 1 +25oC -0.50 - mA TD RL = 1000Ω, CL = 50pf 9 +25oC 5 - ns TON (A) TOFF (A) RL = 10KΩ, CL = 50pf 9 +25oC - 3000 ns TON (EN) TOFF (EN) RL = 1000Ω, CL = 50pf 9 +25oC - 3000 ns Make-Before-Break Time Delay Propagation Delay Times: Adress Inputs to I/O Channels Enable to I/O 5 C Specifications HS-1840RH/883S TABLE 5. DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS Guaranteed, per Mil-Std-883, Method 1019. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V PARAMETER SYMBOL Input Leakage Current, Address, or Enable Pins IAH IAL Leakage Current Into the Source Terminal of an “Off” Switch GROUP A SUBGROUPS CONDITIONS LIMITS TEMPERATURE o MIN MAX UNITS Measure Inputs Sequentially, Ground All Unused Pins 1 +25 C -100 100 nA +IS(OFF) VS = +10V, All Unused Inputs & Output = -10V, VEN = 4.0V 1 +25oC -20 20 nA -IS(OFF) VS = -10V, All Unused Inputs & Output = +10V, VEN = 4.0V 1 +25oC -20 20 nA Leakage Current Into the Drain Terminal of an “Off” Switch +ID(OFF) VD = +10V, VEN = 4.0V All Unused Inputs = -10V 1 +25oC -20 20 nA -ID(OFF) VD = -10V, VEN = 4.0V All Unused Inputs = +10V 1 +25oC -20 20 nA Leakage Current from an “On” Driver into the Switch (Drain & Source) + ID(ON) VS = +10V, VD = +10V, VEN = 0.8V All Unused Inputs = -10V 1 +25oC -20 20 nA -ID(ON) VS = -10V, VD = -10V, VEN = 0.8V All Unused Inputs = +10V 1 +25oC -20 20 nA +15V R(ON) VS = +15V, ID = -1mA, VEN = 0.8V 1 +25oC -150 150 Ω -5V R(ON) VS = -5V, ID = +1mA, VEN = 0.8V 1 +25oC -250 250 Ω Switch On Resistance Positive Supply Current I(+) VEN = 0.8V 1 +25oC -50 50 µA Negative Supply Current I(-) VEN = 0.8V 1 +25oC -50 50 µA Positive Standby Supply Current +ISBY VEN = 4.0V 1 +25oC -50 50 µA Negative Standby Supply Current -ISBY VEN = 4.0V 1 +25oC -50 50 µA TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD Q SUBGROUPS Initial Test 100%/5004 1 Interim Test 100%/5004 1 PDA 100%/5004 1 Final Test 100%/5004 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Samples/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 B5 Samples/5005 1, 2, 3 Others Samples/5005 1, 7 Group D Samples/5005 1, 7 Group E, Subgroup 2 Samples/5005 1, 7 Group A Group B 6 HS-1840RH/883S Performance Characteristics and Test Circuits ACCESS TIME vs. LOGIC LEVEL (HIGH) 4.0V 50% VA 0.8V VA 50Ω A3 IN 1 A2 IN 2 IN 15 A1 A0 EN 0.8V VOUT 15V, 0V 0V, 15V IN 16 VOUT GND 50pF 10K 50% 0V ta BREAK-BEFORE-MAKE DELAY (tOPEN) 4.0V VA 0.8V VA 50Ω A3 IN 1 A2 IN 2 IN 15 A1 A0 VOUT 50% 0.8V 50% EN +5V IN 16 GND OUT VOUT 1K 50pF tOPEN ENABLE DELAY (tON(EN), tOFF(EN)) 4.0V VA A3 A2 0.8V A1 A0 90% OUTPUT IN 2 IN 16 VOUT EN VA 10% VOUT +10V IN 1 tON(EN) tOFF(EN) 7 50Ω 1K 50pF HS-1840RH/883S Burn-In/Life Test Circuits +VS R 1 28 2 27 3 26 25 4 5 GND F4 R +VS -VS R R 24 6 23 7 8 22 21 9 20 10 19 18 11 12 F5 13 16 14 15 GND F1 17 F2 VR F3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 R -VS R R STATIC BURN-IN TEST CIRCUIT DYNAMIC BURN-IN AND LIFE TEST CIRCUIT NOTES: NOTES: VS+ = +15.5V ± 0.5V, VS- = -15.5V ± 0.5V R = 1kΩ ± 5% C1 = C2 = 0.01µF ± 10%, 1 each per socket, minimum D1 = D2 = 1N4002, 1 each per board, minimum Input Signals: square wave, 50% duty cycle, 0V to 15V peak ± 10% F1 = 100kHz; F2 = F1/2; F3 = F1/4; F4 = F1/8; F5 = F1/16 R = 1kΩ ± 5%, 1/4W C1 = C2 = 0.01µF minimum, 1 each per socket, minimum VS+ = 15.5V ± 0.5V, VS- = -15.5V ± 0.5V, VR = 15.5 ± 0.5V NOTES: 1. The Above Test Circuits are Utilized for All Package Types 2. The Dynamic Test Circuit is Utilized for All Life Testing Irradiation Circuit 28 PIN DIP +15V 1 28 NC 2 27 NC 3 26 +1V 4 25 5 24 6 23 7 22 8 21 9 20 10 19 11 18 12 17 13 16 14 15 +5V NOTE: All irradiation testing is performed in the 28 pin DIP package 8 -15V 1KΩ HS-1840RH/883S Schematic Diagrams ADDRESS INPUT BUFFER AND LEVEL SHIFTER V REF LEVEL SHIFTER V+ P OVERVOLTAGE PROTECTION P R3 D2 R1 P P R5 V REF ADD IN. P N P P LEVEL SHIFTED ADDRESS TO DECODE R2 N P P P R7 N N N N R6 R8 N N N N 200Ω D1 V- ADDRESS DECODER MULTIPLEX SWITCH +V P LEVEL SHIFTED ADDRESS TO DECODE R4 P P P P N A0 OR A0 A1 OR A1 A2 OR A2 A3 OR A3 V+ TO SWITCH P P IN N P FROM DECODE N S D N N N N ENABLE VV- 9 OUT HS-1840RH/883S Intersil - Space Level Product Flow SEM - Traceable to Diffusion Method 2018 PDA Calculation 3% Functional 5% Subgroups 1, 7, ∆ Wafer Lot Acceptance Method 5007 Dynamic Burn-In 240 Hours, +125oC Method 1015 Condition D Internal Visual Inspection (Note 1) Gamma Radiation Assurance Tests Method 1019 Electrical Tests Subgroups 1, 7, 9 (T2) 100% Nondestructive Bond Pull Method 2023 Burn-In Delta Calculation (T0 - T2) Customer Pre-Cap Visual Inspection (Notes 1, 2) Temperature Cycling Method 1010 Condition C PDA Calculation 3% Functional 5% Subgroups 1, 7, ∆ Constant Acceleration method 2001 Y1 30KG Electrical Test +125oC, -55oC Particle Impact Noise Detection method 2020, Condition A 20G Alternate Group A Inspection Method 5005 Fine and Gross Leak Tests Method 1014 Marking and Serialization Customer Source Inspection (Note 2) X-Ray Inspection Method 2012 Group B Inspection (Notes 2, 4) Method 5005 Initial Electrical Tests (T0) Group D Inspection (Notes 2, 4) Method 5005 Static Burn-In 72 Hour, +125oC method 1015 Condition A External Visual Inspection Method 2009 Room Temperature Electrical Tests (T1) Data Package Generation (Note 3) Burn-In Delta Calculation (T0-T1) NOTES: 1. Visual Inspection is performed to MIL-STD-883 Method 2010, Condition A. 2. These steps are optional, and should be listed on the purchase order if required. 3. Data package contains: Assembly Attributes (post seal) Test Attributes (includes Group A) -55oC, +25oC, +125oC Shippable Serial Number List Radiation Testing Certificate of Conformance Wafer Lot Acceptance Report (includes SEM report) X-Ray Report and Film Test Variables Data, DC Test and TELQV +25oC Initial Test +25oC Interim Test 1 +25oC Interim Test 2 +25oC Delta Over Burn-In 4. Group B data package contains Attributes Data pulse Variables Data, DC Test and TE2HQV. Group D data package contains Attributes only. 10 HS-1840RH/883S Metallization Topology DIE DIMENSIONS: 110 x 159 x 11mils METALLIZATION: Type: Al Thickness: 12.5kÅ ± 2kÅ GLASSIVATION: Type: SiO2 Thickness: 8kÅ ± 1kÅ DIE ATTACH: Material: Gold Eutectic Temperature: Sidebrazed Ceramic DIP - 460oC (Max) Flatpack - 460oC (Max) WORST CASE CURRENT DENSITY: 1.90e04A/cm2 LEAD TEMPERATURE (10 Seconds Soldering): <275oC PROCESS: CMOS-DI Metallization Mask Layout IN1 IN2 IN3 IN4 IN5 IN6 IN7 HS-1840RH/883S ENABLE IN8 -V A0 A1 OUT A2 A3 VREF +V IN16 11 IN9 IN10 IN11 IN12 IN13 IN14 IN15 GND