INTERSIL HA5320

HA5320/883
High Speed Precision Sample and Hold Amplifier
July 1994
Features
Description
• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Gain, DC . . . . . . . . . . . . . . . . . . . . . . . . 2 x 106 V/V (Typ)
The HA-5320/883 was designed for use in precision, high speed
data acquisition systems.
• Acquisition Time . . . . . . . . . . . . . . . 1.0µs (0.01%) (Typ)
• Droop Rate . . . . . . . . . . . . . . . . 0.08µV/µs (+25oC) (Typ)
17µV/µs (Full Temperature) (Typ)
•
•
•
•
•
Aperture Time. . . . . . . . . . . . . . . . . . . . . . . . . 25ns (Typ)
Hold Step Error . . . . . . . . . . . . . . . . . . . . . . 1.0mV (Typ)
Internal Hold Capacitor
Fully Differential Input
TTL Compatible
Applications
•
•
•
•
•
High Bandwidth Precision Data Acquisition Systems
Inertial Navigation and Guidance Systems
Ultrasonics
SONAR / RADAR
Digital to Analog Converter Deglitcher
Pinouts
HA-5320/883 (CERDIP)
TOP VIEW
The circuit consists of an input transconductance amplifier
capable of providing large amounts of charging current, a low
leakage analog switch, and an output integrating amplifier. The
analog switch sees virtual ground as its load; therefore, charge
injection on the hold capacitor is constant over the entire input/
output voltage range. The pedestal voltage resulting from this
charge injection can be adjusted to zero by use of the offset
adjust inputs. The device includes a hold capacitor. However, if
improved droop rate is required at the expense of acquisition
time, additional hold capacitance may be added externally.
This monolithic device is manufactured using the Intersil
Dielectric Isolation Process, minimizing stray capacitance and
eliminating SCR’s. This allows higher speed and latch-free
operation. For further information, please see Application Note
AN538.
Ordering Information
PART NUMBER
TEMPERATURE
RANGE
PACKAGE
-INPUT 1
14 S/H CONTROL
+INPUT 2
13 SUPPLY GND
HA1-5320/883
-55oC to +125oC
14 Lead CerDIP
12 NC
HA4-5320/883
-55oC to +125oC
20 Lead Ceramic LCC
OFFSET ADJ 3
OFFSET ADJ 4
11 CEXT
V- 5
10 NC
SIG GND 6
9 V+
OUTPUT 7
8 INT. BW
Functional Diagram
OFFSET
ADJUST
3
+IN
-IN
NC
S/H
CNTL
SUPPLY GND
HA-5320/883 (CLCC)
TOP VIEW
3
2
1 20 19
HA-5320/883
-INPUT 1
4
18 NC
NC
5
17 NC
OFFSET ADJ
6
16 CEXT
NC
7
15 NC
V- 8
14 NC
-
7
OUTPUT
+
13
SUPPLY
GND
5
V-
6
SIG
GND
8
INTEGRATOR
BANDWIDTH
11
CEXT
V+
INT. BW
100pF
S/H
CONTROL 14
9 10 11 12 13
NC
9
+INPUT 2
OFFSET ADJ
SIG
GND
OUTPUT
V+
4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
7-3
Spec Number 511096-883
File Number 2927.3
Specifications HA-5320/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
Digital Input Voltage (S/H Pin) . . . . . . . . . . . . . . . . . . . . . .+8V, -15V
Output Current, Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . .±20mA
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Thermal Resistance
θJA
θJC
CerDIP Package . . . . . . . . . . . . . . . . . . .
66oC/W
16oC/W
Ceramic LCC Package . . . . . . . . . . . . . .
57oC/W
9oC/W
Package Power Dissipation at +75oC
CerDip Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W
Package Power Dissipation Derating Factor Above +75oC
CerDip Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mW/oC
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . 17mW/oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . -55oC ≤ TA ≤ +125oC
Operating Supply Voltage (±VS) . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Analog Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Logic Level Low (VIL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 0.8V
Logic Level High (VIH) . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V to 5.0V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V+ = +15V; V- = -15V; VIL = 0.8V (Sample); VIH = 2.0V (Hold); CH = Internal = 100pF; Signal GND = Supply GND,
Unless Otherwise Specified
LIMITS
PARAMETERS
Input Offset Voltage
Input Bias Current
SYMBOL
CONDITIONS
VIO
+IB
-IB
Input Offset Current
Open Loop Voltage Gain
IIO
+AVS
-AVS
Common Mode
Rejection Ratio
+CMRR
-CMRR
Output Current
+IO
-IO
RL = 1kΩ, VOUT = +10V
RL = 1kΩ, VOUT = -10V
V+ = 10V, V- = -20V,
VOUT = -5V, VS/H = -4.2V,
VGND = -5V
V+ = 20V, V- = -10V,
VOUT = +5V, VS/H = 5.8V,
VGND = +5V
VOUT = +10V
VOUT = -10V
GROUP A
SUBGROUP
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
−1
+1
mV
2, 3
+125oC, -55oC
−2
+2
mV
1
+25oC
−200
+200
nA
2, 3
+125oC, -55oC
−200
+200
nA
1
+25oC
−200
+200
nA
2, 3
+125oC, -55oC
−200
+200
nA
1
+25oC
−100
+100
nA
2, 3
+125oC, -55oC
−100
+100
nA
1
+25oC
120
-
dB
2, 3
+125oC, -55oC
110
-
dB
1
+25oC
120
-
dB
2, 3
+125oC, -55oC
110
-
dB
1
+25oC
80
-
dB
2, 3
+125oC, -55oC
80
-
dB
1
+25oC
80
-
dB
2, 3
+125oC, -55oC
80
-
dB
1
+25oC
10
-
mA
2, 3
+125oC, -55oC
10
-
mA
1
+25oC
-10
-
mA
2, 3
+125oC, -55oC
-10
-
mA
CAUTION: These devices are sensitive to electronic discharge. Proper IC handling procedures should be followed.
7-4
Spec Number
511096-883
Specifications HA-5320/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V+ = +15V; V- = -15V; VIL = 0.8V (Sample); VIH = 2.0V (Hold); CH = Internal = 100pF; Signal GND = Supply GND,
Unless Otherwise Specified
LIMITS
PARAMETERS
Output Voltage Swing
SYMBOL
+VOP
-VOP
Power Supply Current
+ICC
-ICC
Power Supply Rejection
Ratio
+PSRR
-PSRR
Digital Input Current
IINL
IINH
Digital Input Voltage
CONDITIONS
RL = 1kΩ
RL = 1kΩ
VOUT = 0V, IOUT = 0mA
VOUT = 0V, IOUT = 0mA
V+ = 14.5V, 15.5V
V- = -15V, -15V
V+ = +15V, +15V,
V- = -14.5V, -15.5V
VIN = 0V
VIN = 5V
VIL
VIH
Output Voltage Droop
Rate
VD
VOUT = 0V
GROUP A
SUBGROUP
TEMPERATURE
MIN
MAX
UNITS
1
+25oC
10
-
V
2, 3
+125oC, -55oC
10
-
V
1
+25oC
-
-10
V
2, 3
+125oC, -55oC
-
-10
V
1
+25oC
-
13
mA
2, 3
+125oC, -55oC
-
13
mA
1
+25oC
-13
-
mA
2, 3
+125oC, -55oC
-13
-
mA
1
+25oC
80
-
dB
2, 3
+125oC, -55oC
80
-
dB
1
+25oC
65
-
dB
2, 3
+125oC, -55oC
65
-
dB
1
+25oC
-
4
µA
2, 3
+125oC, -55oC
-
10
µA
1
+25oC
-
0.1
µA
2, 3
+125oC, -55oC
-
0.1
µA
1
+25oC
-
0.8
V
2, 3
+125oC, -55oC
-
0.8
V
1
+25oC
2.0
-
V
2, 3
+125oC, -55oC
2.0
-
V
2
+125oC
-
100
µV/µs
NOTE:
1. Internal power dissipation may limit output current below 20mA.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Specifications in Table 3.
CAUTION: These devices are sensitive to electronic discharge. Proper IC handling procedures should be followed.
7-5
Spec Number
511096-883
Specifications HA-5320/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
Hold Mode Feedthrough
VHMF
Hold Step Error
NOTES
TEMPERATURE
MIN
MAX
UNITS
VIN = 10VP-P , 100kHz
1
+25oC
-
3
mV
VIH = 3.5V, VIL = 0V,
TRISE (VIL to VIH) = 10ns
1
+25oC
-11
11
mV
EN(SAMPLE) DC to 10MHz, VS/H = 0V,
RLOAD = 2kΩ
1
+25oC
-
200
µVRMS
DC to 10MHz, VS/H = 5V,
RLOAD = 2kΩ
1
+25oC
-
200
µVRMS
VERROR
Sample Mode Noise
Voltage
CONDITIONS
Hold Mode Noise
Voltage
EN(HOLD)
Input Capacitance
CIN
VS/H = 0V
1
+25oC
-
5
pF
Input Resistance
RIN
VS/H = 0V, Delta VIN = 20V
1
+25oC
1
-
MΩ
Slew Rate
+SR
CL = 50pF, RL = 2kΩ,
VOUT = -5V to +5V Step
10%, 90% pts
1
+25oC
30
-
V/µs
-SR
CL = 50pF, RL = 2kΩ,
VOUT = +5V to -5V Step
10%, 90% pts
1
+25oC
30
-
V/µs
TR
CL = 50pF, RL = 2kΩ,
VOUT = 0V to +200mV Step
10%, 90% pts
1
+25oC
-
150
ns
TF
CL = 50pF, RL = 2kΩ,
VOUT = 0V to -200mV Step
10%, 90% pts
1
+25oC
-
150
ns
+OS
CL = 50pF, RL = 2kΩ,
VOUT = 0V to +200mV Step
1
+25oC
-
25
%
-OS
CL = 50pF, RL = 2kΩ,
VOUT = 0V to -200mV Step
1
+25oC
-
25
%
CL = 50pF, RL = 2kΩ,
VOUT = 0V to 10V Step
1
+25oC
-
1.2
µs
Rise and Fall Times
Overshoot
0.1% Acquisition Time
TACQ 0.1%
NOTE:
1. The parameters listed in this table are controlled via design or process parameters and are not directly tested. These parameters are
characterized upon initial design release and upon design changes which would affect these characteristics.
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
SUBGROUPS (SEE TABLE 1)
Interim Electrical Parameters (Pre Burn-In)
-
Final Electrical Test Parameters
1(Note 1), 2, 3
Group A Test Requirements
1, 2, 3
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only. No other subgroups are included in PDA.
Spec Number
7-6
511096-883
HA-5320/883
Die Characteristics
DIE DIMENSIONS:
92 x 152 x 19 ± 1mils
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
1.742 x 105 A/cm2
TRANSISTOR COUNT: 184
SUBSTRATE POTENTIAL: V-
Metallization Mask Layout
HA-5320/883
CEXT
(11)
SUPPLY GND
(13)
V+
(9)
S/H CTRL (14)
-INPUT (1)
(8) INT BW
(7) OUTPUT
(6) SIG GND
+INPUT (2)
(3)
(4)
(5)
VIO ADJ
VIO ADJ
V-
Spec Number
7-7
511096-883
HA-5320/883
Burn-In Circuits
HA-5320/883 DIP BURN-IN/LIFE TEST CIRCUIT
R1
-V
D2
C2
1
14
2
13
3
12
4
11
5
10
6
9
7
8
+V
D1
C1
HA-5320/883 LCC BURN-IN/LIFE TEST CIRCUIT
R1
3
2
1
20
19
4
18
5
17
6
16
7
15
14
8
-V
D2
C2
9
10
11
12
13
+V
C1
D1
NOTES:
1. R1 = 100kΩ, 5%, (per socket).
2. C1, C2 = 0.01µF minimum per socket or 0.1µF minimum per row.
3. D1, D2 = 1N4002 or equivalent (per board).
4. +V = +15.5V ±0.5V, -V = -15.5V ± 0.5V.
Spec Number
7-8
511096-883
HA-5320/883
Packaging
c1
LEAD FINISH
F14.3 MIL-STD-1835 GDIP1-T14 (D-1, CONFIGURATION A)
14 LEAD DUAL-IN-LINE FRIT-SEAL CERAMIC PACKAGE
-D-
-A-
BASE
METAL
-Bbbb S
C A-B S
MIN
MAX
MIN
MAX
b1
A
-
0.200
-
5.08
-
M
(b)
b
0.014
0.026
0.36
0.66
2
b1
0.014
0.023
0.36
0.58
3
b2
0.045
0.065
1.14
1.65
-
b3
0.023
0.045
0.58
1.14
4
SECTION A-A
D S
D
BASE
PLANE
Q
A
-C-
SEATING
PLANE
α
L
S1
eA
A A
b2
b
ccc M
C A-B S
e
D S
eA/2
MILLIMETERS
SYMBOL
E
M
INCHES
(c)
c
aaa M C A - B S D S
NOTES
c
0.008
0.018
0.20
0.46
2
c1
0.008
0.015
0.20
0.38
3
D
-
0.785
-
19.94
5
E
0.220
0.310
5.59
7.87
5
e
0.100 BSC
2.54 BSC
eA
0.300 BSC
7.62 BSC
-
eA/2
0.150 BSC
3.81 BSC
-
L
0.125
0.200
3.18
5.08
-
Q
0.015
0.060
0.38
1.52
6
S1
0.005
-
0.13
-
7
S2
0.005
-
0.13
-
-
α
90o
105o
90o
105o
-
aaa
-
0.015
-
0.38
-
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
bbb
-
0.030
-
0.76
-
ccc
-
0.010
-
0.25
-
M
-
0.0015
-
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
N
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
14
0.038
14
2
8
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b1.
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling Dimension: Inch.
11. Materials: Compliant to MIL-I-38535.
Spec Number
7-9
511096-883
HA-5320/883
Packaging (Continued)
D
J20.A
MIL-STD-1835 CQCC1-N20 (C-2)
20 PAD METAL SEAL LEADLESS CERAMIC CHIP CARRIER
D3
j x 45o
INCHES
E3
B
E
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.060
0.100
1.52
2.54
6, 7
A1
0.050
0.088
1.27
2.23
7
B
-
-
-
-
4
B1
0.022
0.028
0.56
0.71
2, 4
B2
h x 45o
A
A1
PLANE 2
PLANE 1
e
0.022
0.15
0.56
-
0.342
0.358
8.69
9.09
-
D1
0.200 BSC
5.08 BSC
-
D2
0.100 BSC
2.54 BSC
-
D3
-
0.358
-
9.09
2
E
0.342
0.358
8.69
9.09
-
E1
0.200 BSC
5.08 BSC
-
E2
0.100 BSC
2.54 BSC
-
E3
-
h
B3
B1
L2
B2
0.358
-
0.050 BSC
0.015
9.09
1.27 BSC
-
0.38
0.040 REF
0.020 REF
2
-
-
2
1.02 REF
5
0.51 REF
5
L
0.045
0.055
1.14
1.40
-
L1
0.045
0.055
1.14
1.40
-
L2
0.075
0.095
1.91
2.41
-
L3
0.003
0.015
0.08
ND
E2
-
0.006
j
E1
1.83 REF
D
e1
L3
0.072 REF
B3
e
L
MILLIMETERS
5
0.38
5
3
NE
5
5
3
N
20
20
3
NOTES:
L1
1. Metallized castellations shall be connected to plane 1 terminals
and extend toward plane 2 across at least two layers of ceramic
or completely across all of the ceramic layers to make electrical
connection with the optional plane 2 terminals.
D2
e1
D1
2. Unless otherwise specified, a minimum clearance of 0.015 inch
(0.381mm) shall be maintained between all metallized features
(e.g., lid, castellations, terminals, thermal pads, etc.)
3. Symbol “N” is the maximum number of terminals. Symbols “ND”
and “NE” are the number of terminals along the sides of length
“D” and “E”, respectively.
4. The required plane 1 terminals and optional plane 2 terminals
shall be ellectrically connected.
5. The corner shape (square, notch, radius, etc.) may vary at the
manufacturer’s option, from that shown on the drawing.
6. Chip carriers shall be constructed of a minimum of two ceramic
layers.
7. Maximum limits allows for 0.007 inch solder thickness on pads.
8. Materials: Compliant to MIL-I-38535.
Spec Number
7-10
511096-883
HA5320
Semiconductor
DESIGN INFORMATION
High Speed Precision
Sample and Hold Amplifier
August 1999
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Applying the HA-5320
The HA-5320 has the uncommitted differential inputs of an
op amp, allowing the Sample and Hold function to be
combined with many conventional op amp circuits. See the
Intersil Application Note 517 for a collection of circuit ideas.
Layout
A printed circuit board with ground plane is recommended
for best performance. Bypass capacitors (0.01 to 0.1µF,
ceramic) should be provided from each power supply terminal to the Supply Ground terminal on pin 13.
The ideal ground connections are pin 6 (SIG. Ground)
directly to the system Signal Ground, and pin 13 (Supply
Ground) directly to the system Supply Common.
Hold Capacitor
The HA-5320 includes a 100pF MOS hold capacitor, sufficient for most high speed applications (the Electrical Specifications section is based on this internal capacitor).
Additional capacitance may be added between pins 7 and
11. This external hold capacitance will reduce droop rate at
the expense of acquisition time, and provide other trade-offs
as shown in the Performance Curves.
If an external hold capacitor CEXT is used, then a noise
band- width capacitor of value 0.1CEXT should be connected
from pin 8 to ground. Exact value and type are not critical.
The hold capacitor CEXT should have high insulation resistance and low dielectric absorption, to minimize droop
errors. Polystyrene dielectric is a good choice for operating
temperatures up to +85oC. Teflon and glass dielectrics
offer good performance to +125oC and above.
The hold capacitor terminal (pin 11) remains at virtual
ground potential. Any PC connection to this terminal should
be kept short and “guarded” by the ground plane, since
nearby signal lines or power supply voltages will introduce
errors due to drift current.
Teflon is a registered Trademark of Dupont Corporation.
Applications
Figure 1 shows the HA-5320 connected as a unity gain noninverting amplifier – its most widely used configuration. As
an input device for a fast successive – approximation A/D
converter, it offers very high throughput rate for a monolithic
IC sample/hold amplifier. Also, the hold step error is adjustable to zero using the Offset Adjust potentiometer, to deliver
a 12-bit accurate output from the converter.
The application may call for an external hold capacitor CEXT
as shown. As mentioned earlier, 0.1CEXT is then recommended at pin 8 to reduce output noise in the Hold mode.
The HA-5320 output circuit does not include short circuit
protection, and consequently its output impedance remains
low at high frequencies. Thus, the step changes in load current which occur during an A/D conversion are absorbed at
the S/H output with minimum voltage error. A momentary
short circuit to ground is permissible, but the output is not
designed to tolerate a short of indefinite duration.
-15V +15V
10kΩ
OFFSET
ADJUST
±15mV
CEXT
3
4
5
9 11
HI-574A
100pF
1
VIN
2
S/H CONTROL
H
S
14
-
7
-
+
+
6
CONVERT
8
0.1CEXT
SYSTEM
POWER
GROUND
INPUT
DIGITAL
OUTPUT
HA-5320
13
13
SYSTEM
SIGNAL
GROUND
5
R/C
9
ANALOG
COMMON
FIGURE 1. TYPICAL HA-5320/883 CONNECTIONS; NONINVERTING UNITY GAIN MODE
NOTE: Pin Numbers Refer to DIP Package Only.
Spec Number
7-11
511096-883
HA-5320
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Test Circuits
CHARGE TRANSFER AND DRIFT CURRENT
1
7
-INPUT
2
8
+INPUT
S/H
CONTROL
INPUT
VO
OUTPUT
14
N.C.
11
S/H CONTROL
N.C.
HA-5320
(CH = 100pF)
CHARGE TRANSFER TEST
1. Observe the “hold step” voltage Vp:
DRIFT CURRENT TEST
1. Observe the voltage “droop”, ∆VO/∆T:
HOLD (+3.5V)
S/H CONTROL
HOLD (4.0V)
S/H CONTROL
SAMPLE (0V)
SAMPLE (0V)
VO
∆VO
VO
Vp
∆T
2. Compute charge transfer: Q = VpCH
2. Measure the slope of the output during hold, ∆VO /∆T, and compute drift current: ID = CH ∆VO/∆T.
HOLD MODE FEED THROUGH ATTENUATION
+V
VIN
ANALOG
MUX OR
SWITCH
HA-5320
9
1
10Vp-p
100kHz
SINE WAVE
S/H CONTROL
INPUT
2
AIN
-V
14
5
VOUT
-IN
+IN
OUT
7
S/H CONTROL
SUPPLY
CEXT
GND
REF
COM
INT.
COMP.
13
6
8
11
TO
SUPPLY
COMMON
Feedthrough in dB = 20 Log
N.C.
TO
SIGNAL
GND
N.C.
VOUT where:
VIN
VOUT = Voltsp-p, Hold Mode,
VIN = Voltsp-p.
Spec Number
7-12
511096-883
HA-5320
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
VSUPPLY = ±15VDC
Performance Curves
TYPICAL SAMPLE AND HOLD PERFORMANCE
AS FUNCTION OF HOLDING CAPACITOR
DRIFT CURRENT vs TEMPERATURE
ACQUISITION TIME
FOR 10V STEP TO +0.01%(µs)
10
5
CH = 100pF, INTERNAL
1000
0.5
IDRIFT (pA)
VOLTAGE DROOP
DURING HOLD MODE
(mV/100ms)
1.0
100
10
0.1
1.0
0.05
SAMPLE-TO-HOLD
OFFSET (HOLD STEP)
ERROR (mV)
0.01
100
1000
10K
CH VALUE (pF)
-25 0 +25 +50 +75 +100 +125
TEMPERATURE (oC)
100K
OPEN LOOP GAIN AND PHASE RESPONSE
100
0
80
45
60
90
θ
(CH = 100pF)
G
40
135
G
(CH = 1100pF)
20
PHASE (DEGREES)
GAIN (dB)
120
180
0
10
100
1K
10K
FREQUENCY (Hz)
100K
1M
10M
TYPICAL SAMPLE-TO-HOLD OFFSET (HOLD STEP) ERROR
HOLD STEP vs. INPUT VOLTAGE
HOLD STEP vs. LOGIC (VIH) VOLTAGE
2.0
CH = 100pF
TA = +25oC
-10
-8
-6
-4
1.0
CH = 100pF
0.1
CH = 1000pF
0.01
CH = 0.01µF
-2
2
4
6
8
HOLD STEP VOLTAGE (mV)
HOLD STEP
VOLTAGE
(mV)
10
1.5
+75oC
1.0
+25oC
0.5
DC INPUT (V)
0.0
2
3
4
LOGIC LEVEL HIGH (V)
Spec Number
7-13
5
511096-883
HA-5320
DESIGN INFORMATION (Continued)
The information contained in this section has been developed through characterization by Intersil Semiconductor and is for use as application and design information only. No guarantee is implied.
Glossary of Terms
Acquisition Time
See Performance Curves.
The time required following a “sample” command, for the
output to reach its final value within ±0.1% or ±0.01%. This is
the minimum sample time required to obtain a given accuracy, and includes switch delay time, slewing time and settling time.
Effective Aperture Delay Time (EADT)
Charge Transfer
The small charge transferred to the holding capacitor from
the inter-electrode capacitance of the switch when the unit is
switched to the HOLD mode. Charge transfer is directly proportional to sample-to-hold offset pedestal error, where:
EADT may be positive, negative or zero. If zero, the S/H
amplifier will output a voltage equal to VIN at the instant the
Hold command was received. For negative EADT, the output
in Hold (exclusive of pedestal and droop errors) will
correspond to a value of VIN that occurred before the Hold
command.
Aperture Uncertainty
Charge Transfer (pC) = CH (pF) x Offset Error (V)
Aperture Time
The time required for the sample-and-hold switch to open,
independent of delays through the switch driver and input
amplifier circuitry. The switch opening time is the interval
between the conditions of 10% open and 90% open.
Hold Step Error
Hold Step Error is the output error due to Charge Transfer
(see above). It may be calculated from Charge Transfer,
using the following relationship:
HOLD STEP (V) =
The difference between propagation time from the analog
input to S/H switch, and digital delay time between the Hold
command and opening of the switch.
The range of variation in Effective Aperture Delay Time.
Aperture Uncertainty (also called Aperture Delay
Uncertainty, Aperture Time Jitter, etc.) sets a limit on the
accuracy with which a waveform can be reconstructed from
sample data.
Drift Current
The net leakage current from the hold capacitor during the
hold mode. Drift current can be calculated from the droop
rate using the formula:
ID (pA) = CH (pF) x
CHARGE TRANSFER (pC)
∆V
(V/s)
∆T
HOLD CAPACITANCE (pF)
TYPICAL PERFORMANCE CHARACTERISTICS
TEMPERATURE
TYP
UNITS
Input Voltage Range
PARAMETER
Full
±10
V
Offset Voltage Drift
Full
5
µV/oC
Av = +1, VO = 200mVP-P, RL = 2K, CL = 50pF
+25oC
2
MHz
Gain Bandwidth Product (CH = 1000pF)
Av = +1, VO = 200mVP-P, RL = 2K, CL = 50pF
+25oC
0.18
MHz
Full Power Bandwidth
VO = 20VP-P, RL = 2K, CL = 50pF
+25oC
600
kHz
+25oC
1.0
Ω
0.8
µs
Gain Bandwidth Product (CH = 100pF)
CONDITIONS
Output Resistance (Hold Mode)
0.1% Acquisition Time
VO = 10V Step, RL = 2K, CL = 50pF
+25oC
0.01% Acquisition Time
VO = 10V Step, RL = 2K, CL = 50pF
+25oC
1.0
µs
Effective Aperture Delay Time
+25oC
-25
ns
Aperture Uncertainty
+25oC
0.3
ns
0.01% Hold Mode Settling Time
+25oC
165
ns
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notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
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may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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Spec Number
7-14
511096-883