INTERSIL HA1-5330-5

HA-5330
®
Data Sheet
June 2004
650ns Precision Sample and Hold
Amplifier
Features
• Very Fast Acquisition . . . . . . 500ns (0.1%) 650ns (0.01%)
The HA-5330 is a very fast sample and hold amplifier
designed primarily for use with high speed A/D converters. It
utilizes the Intersil Dielectric Isolation process to achieve a
650ns acquisition time to 12-bit accuracy and a droop rate of
0.01µV/µs. The circuit consists of an input transconductance
amplifier capable of producing large amounts of charging
current, a low leakage analog switch, and an integrating
output stage which includes a 90pF hold capacitor.
The analog switch operates into a virtual ground, so charge
injection on the hold capacitor is constant and independent
of VIN. Charge injection is held to a low value by
compensation circuits and, if necessary, the resulting 0.5mV
hold step error can be adjusted to zero via the Offset Adjust
terminals. Compensation is also used to minimize leakage
currents which cause voltage droop in the Hold mode.
The HA-5330 will operate at reduced supply voltages (to
±10V) with a reduced signal range. The MIL-STD-883 data
sheet for this device is available on request.
• Low Droop Rate . . . . . . . . . . . . . . . . . . . . . . . . 0.01µV/µs
• Very Low Offset . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2mV
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V/µs
• Wide Supply Range . . . . . . . . . . . . . . . . . . . . . ±10V to ±20V
• Internal Hold Capacitor
• Fully Differential Input
• TTL/CMOS Compatible
Applications
• Precision Data Acquisition Systems
• D/A Converter Deglitching
• Auto-Zero Circuits
• Peak Detectors
Functional Diagram
Ordering Information
TEMP.
RANGE (oC)
PART NUMBER
HA1-5330-5
0 to 75
OFFSET
ADJUST
PKG.
DWG. #
PACKAGE
14 Ld CERDIP
3
+IN
S/H
CONTROL
+IN 1
14 -IN
NC 2
13 NC
OFFSET ADJ. 3
12 SIGNAL GND
OFFSET ADJ. 4
11 SUPPLY GND
5
10 V+
NC 6
9 NC
10
90pF
HA-5330
- IN
HA-5330 (CERDIP)
TOP VIEW
V+
4
F14.3
Pinout
V-
FN2858.5
14
7
1
OUT
8
11
SUPPLY
GND
5
V-
12
SIGNAL
GND
8 S/H CONTROL
OUTPUT 7
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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HA-5330
Absolute Maximum Ratings
Thermal Information
Voltage between V+ and SUPPLY/SIG GND . . . . . . . . . . . . . . .+20V
Voltage between V- and SUPPLY/SIG GND . . . . . . . . . . . . . . . -20V
Voltage between SUPPLY GND and SIG GND . . . . . . . . . . . . ±2.0V
Voltage between S/H Control and SUPPLY/SIG GND . . . . +8V, -6V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
Output Current, Continuous (Note 1) . . . . . . . . . . . . . . . . . . . ±17mA
Supply Voltage Range (Typical) . . . . . . . . . . . . . . . . . ±10V to ±20V
Thermal Resistance (Typical, Note 3)
θJA (oC/W)
θJC (oC/W)
CERDIP Package. . . . . . . . . . . . . . . . .
66
16
Maximum Junction Temperature (Ceramic Package, Note 2) . . .175oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Internal Power Dissipation may limit Output Current below ±17mA.
2. Maximum power dissipation, including output load, must be designed to maintain the junction temperature below 175oC for the ceramic package.
3. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
VSUPPLY = ±15V; S/H Control VIL = +0.8V (Sample): VIH = +2.0V (Hold); SIG GND = SUPPLY GND,
Unity Gain Configuration (Output tied to -Input), Unless Otherwise Specified
TEMP (oC)
MIN
Input Voltage Range
Full
Input Resistance (Note 4)
25
Input Capacitance
Offset Voltage
PARAMETER
TEST CONDITIONS
TYP
MAX
UNITS
±10
-
-
V
5
15
-
MΩ
25
-
3
-
pF
25
-
0.2
-
mV
Full
-
-
1.5
mV
Offset Voltage Temperature Coefficient
Full
-
1
10
µV/oC
Bias Current
25
-
±20
-
nA
Full
-
-
±300
nA
INPUT CHARACTERISTICS
Offset Current
25
-
20
-
nA
Full
-
-
300
nA
Full
±10
-
-
V
VCM = ±10V
Full
86
100
-
dB
Gain
DC
Full
2 x 106
2 x 107
-
V/V
Gain Bandwidth Product
Note 12
25
-
4.5
-
MHz
Output Voltage
Full
±10
-
-
V
Output Current
Full
±10
-
-
mA
Full Power Bandwidth (Note 6)
25
-
1.4
-
MHz
25
-
0.2
-
Ω
-
10-5
0.001
Ω
-
230
-
µVRMS
Common Mode Range
CMRR
TRANSFER CHARACTERISTICS
OUTPUT CHARACTERISTICS
Output Resistance
Hold Mode
Sample Mode
Total Output Noise, DC to 4MHz
25
Sample Mode
Hold Mode
25
-
190
-
µVRMS
Rise Time
Note 5
25
-
70
-
ns
Overshoot
Note 5
25
-
10
-
%
TRANSIENT RESPONSE
2
HA-5330
Electrical Specifications
VSUPPLY = ±15V; S/H Control VIL = +0.8V (Sample): VIH = +2.0V (Hold); SIG GND = SUPPLY GND,
Unity Gain Configuration (Output tied to -Input), Unless Otherwise Specified (Continued)
TEMP (oC)
MIN
TYP
MAX
UNITS
Note 7
25
-
90
-
V/µs
VIH
Full
2.0
-
-
V
VIL
Full
-
-
0.8
V
VIL = 0V
Full
-
10
40
µA
VIH = 5V
Full
-
10
40
µA
To 0.1%, Note 8
25
-
500
-
ns
Full
-
-
700
ns
PARAMETER
TEST CONDITIONS
Slew Rate
DIGITAL INPUT CHARACTERISTICS
Input Voltage
Input Current
SAMPLE/HOLD CHARACTERISTICS
Acquisition Time
To 0.01%, Note 8
25
-
650
-
ns
Full
-
-
900
ns
Aperture Time (Note 4)
25
-
20
-
ns
Effective Aperture Delay Time
25
-50
-25
0
ns
Aperture Uncertainty
25
-
0.1
-
ns
Droop Rate (Note 9)
25
-
0.01
-
µV/µs
Full
-
-
10
µV/µs
25
-
0.5
-
mV
Hold Step Error
Note 10
Hold Mode Settling Time
To 0.01%
25
-
100
200
ns
Hold Mode Feedthrough
20VP-P, 100kHz
Full
-
-88
-
dB
Positive Supply Current
Full
-
18
24
mA
Negative Supply Current
Full
-
19
25
mA
Full
86
100
-
dB
POWER SUPPLY CHARACTERISTICS
Power Supply Rejection
Note 11
NOTES:
4. Derived from computer simulation only; not tested.
5. VI = 200mV Step; RL = 2kΩ; CL = 50pF.
Slew Rate . Distortion of wave shape occurs beyond 100kHz due
6. Full power bandwidth based on slew rate measurement using: FPBW = --------------------------2πV PEAK
to slew rate enhancement circuitry.
7. VO = 20V Step; RL = 2kΩ; CL = 50pF.
8. VO = 10V Step; RL = 2kΩ; CL = 50pF.
9. This parameter is measured at ambient temperature extremes in a high speed test environment. Consequently, steady state heating effects
from internal power dissipation are not included.
10. VIN = 0V; VIH = +3.5V; tR = 22ns (VIL to VIH). See graph.
11. Based on a 3V delta in each supply, i.e. 15V ±1.5VDC.
12. VOUT = 200mVP-P, RL = 2kΩ, CL = 50pF.
3
HA-5330
Application Information
Output Stage
The HA-5330 has the uncommitted differential inputs of an
op amp, allowing the Sample/Hold function to be combined
with many conventional op amp circuit ideas. See the Intersil
Application Note AN517 for a collection of circuit ideas.
The HA-5330 output circuit does not include short circuit
protection, and consequently its output impedance remains
low at high frequencies. Thus, the step changes in load
current which occur during an A/D conversion are absorbed
at the S/H output with minimum voltage error. A momentary
short circuit to ground is permissible, but the output is not
designed to tolerate a short of indefinite duration.
Layout
A printed circuit board with ground plane is recommended
for best performance. Bypass capacitors (0.01µF to 0.1µF,
ceramic) should be provided from each power supply
terminal to the Supply GND Terminal on pin 11.
Typical Applications
The HA-5330 is configured as a unity gain noninverting
amplifier by simply connecting the output (pin 7) to the
inverting input (pin 14). As an input device for a fast
successive - approximation A/D converter, it offers an
extremely high throughput rate. Also, the HA-5330’s pedestal
error is adjustable to zero by using an Offset Adjust
potentiometer (10K to 50K) center tapped to V-.
V-
Acquisition Time
The time required following a “sample” command, for the
output to reach its final value within ±0.1% or ±0.01%. This is
the minimum sample time required to obtain a given
accuracy, and includes switch delay time, slewing time and
settling time.
Aperture Time
The time required for the sample-and-hold switch to open,
independent of delays through the switch driver and input
amplifier circuitry. The switch opening time is that interval
between the conditions of 10% open and 90% open.
Hold Step Error
10kΩ - 50kΩ
4
FIGURE 1. HA-5330 OFFSET ADJUST
The ideal ground connections are pin 11 (Supply Ground)
directly to the system Supply Common, and pin 12 (Signal
Ground) directly to the system Signal Ground (Analog
Ground).
Hold Capacitor
The HA-5330 includes a 90pF MOS hold capacitor, sufficient
for most high speed applications (the Electrical
Specifications section is based on the internal capacitor).
MAGNITUDE
HOLD STEP ERROR (mV)
Hold step error is the output shift due to charge transfer from
the sample to the hold mode. It is also referred to as “offset
step” or “pedestal error”.
3
3.0
2.0
1.0
0.0
-1.0
-2.0
20
40
60
80
100
RISE TIME (ns) 0V TO 3.5V
FIGURE 3. HOLD STEP ERROR vs S/H CONTROL RISE TIME
Effective Aperture Delay Time (EADT)
20
PHASE
0
0
±15V SUPPLIES
-20
90
-40
±12V SUPPLIES
180
PHASE (DEGREES)
40
MAGNITUDE (dB)
Glossary of Terms
The difference between the digital delay time from the Hold
command to the opening of the S/H switch, and the
propagation time from the analog input to the switch.
EADT may be positive, negative or zero. If zero, the S/H
amplifier will output a voltage equal to VIN at the instant the
Hold command was received. For negative EADT, the output
in Hold (exclusive of pedestal and droop errors) will
correspond to a value of VIN that occurred before the Hold
command.
Aperture Uncertainty
1K
10K
100K
1M
FREQUENCY (Hz)
FIGURE 2. MAGNITUDE AND PHASE RESPONSE
(CLOSED LOOP GAIN = 100)
4
10M
The range of variation in Effective Aperture Delay Time.
Aperture Uncertainty (also called Aperture Delay Uncertainty,
Aperture Time Jitter, etc.) sets a limit on the accuracy with
which a waveform can be reconstructed from sample data.
HA-5330
Die Characteristics
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
DIE DIMENSIONS:
99 mils x 166 mils x 19 mils
2510µm x 4210µm x 483µm
SUBSTRATE POTENTIAL (POWERED UP):
METALLIZATION:
Signal GND
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
TRANSISTOR COUNT:
205
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5330
+IN
-IN
SIGNAL GND
SUPPLY GND
V+
OFFSET ADJ
OFFSET ADJ
V-
OUTPUT
S/H CONTROL
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
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reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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