BL M19A881xxx

LED DOT MATRIX
BL-M19X881XXX
Features:
Ø
46.80mm (1.9”) ¦µ4.8 dot matrix LED display, RGB COLOR
Ø
Low current operation.
Ø
Excellent character appearance.
Ø
Easy mounting on P.C. Boards or sockets.
Ø
I.C. Compatible.
Ø
ROHS Compliance.
Electrical-optical characteristics: (Ta=25°C)
Part No
Row Cathode
Row Anode
Emitted
Column Anode
Column Cathode
Color
BL-M19A881RGB-
BL-M19B881RGB-
XX
XX
BL-M19A881DUGU
BL-M19B881DUGU
B-XX
B-XX
·-XX: Surface / Lens color：
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
(Test Condition: IF=20mA)
Chip
VF
Unit:V
？
P
Material
Typ
Max
(nm)
Iv
TYP.(mcd
)
Super Red
GaAl As/GaAs,DH
660
1.85
2.20
270
Green
GaP/GaP
570
2.20
2.50
240
Ultra Blue
InGaN
470
2.70
4.20
150
Ultra Red
GaAl As/GaAs,DDH
660
1.85
2.20
310
Ultra
Green
AlGaInP
574
2.20
2.50
380
Ultra Blue
InGaN
470
2.70
4.20
270
1
2
3
4
5
Black
White
diffused
Gray
Red
Diffused
Red
Green
Diffused
Green
Yellow
Diffused
Absolute maximum ratings (Ta=25°C)
Parameter
S
G
B
D
UG
UB
Unit
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature T OPR
25
60
5
30
65
5
30
120
5
25
60
5
30
75
5
30
120
5
mA
mW
V
150
150
100
150
150
100
mA
Storage Temperature T STG
Lead Soldering
Temperature
-40 to +80
°C
-40 to +85
°C
Max.260±5°C for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
°C
T SOL
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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LED DOT MATRIX
BL-M19X881XXX
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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LED DOT MATRIX
BL-M19X881XXX
Typical electrical-optical characteristics curves:
(A)
1.0
(B )
(C)
( D)
(2)
(3)
(8)
( 4)
(1) (6)
( 5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wav elength(nm)
RELATIV E INTENS ITY Vs WA VELE NGT H(¦Ë p )
(1) - GaAsP/GaAs 655nm/Red
(9) - GaAlAs 880nm
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(6) - GaAlAs/GaAs 660nm/Super Red
(D) - InGaAl/SiC 525nm/Ultra Green
(8) - GaAsP/GaP 610nm/Super Red
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(m
A
)
8
64 5
1
50
2 3
R
E
L
A
T
IV
E
L
U
M
IN
O
U
S
IN
T
E
N
S
IT
Y
40
30
20
10
0
1.2
1.6
2.0
2.4
2.6
3.0
4.0
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(m
A
)
3.0
2.0
5
B
1.0
0
20
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
R
E
L
A
T
IV 3
1
E 2
5
4
L
2
U
M 1 3
IN
O
U 0.5
S
IN
T
E
N
S 0.2
IT
Y
0.1
-30 -20
50
1
40
60
80
40
30
20
1
6
2,4,8,A
3
5
10
0
100
20
3KHz
300KHz
1KHz
100KHz F-REFRESH R ATE
10 10KH z
9
8
7
6
5
ID
C
M
A
X
.
Ip
e 4
a
k
M
A 3
X
.
2
-10
0
10
20
30
40
50
60
80
100
Ip
e
a
k
M
A
X
.
30KHz
3 KHz
300Hz
100KHz
10KHz 1KHz
100H z
10
9
8
7
6
5
4
3
2
70
1
AMBIENT TEM PER ATUR E Ta(℃ )
60
AMBIENT TEMPERATURE Ta( ℃)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
FORWARD CURRENT (mA)
RELATIVE LUMI NOUS
INTENSI TY VS. FORWARD
CURRENT
ID
C
M
A
X
.
40
1
10
100
1000
tp-PU LSE DU RATION uS
(1,2 ,3 ,4,6,8,B.D.J. K)
10,000
1
1
10
100
1000
tp-P ULSE DU RATION uS
(5)
NOTE:25℃ free air temperat ure unless otherw ise sp ecifie d
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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10,000
LED DOT MATRIX
BL-M19X881XXX
Packing and weighting
20.5g/pcs
Maximum
21pcs/bag
Maximum
5
Bag/Inner Box
3 Inner Box /Box
9 Inner Box /Box
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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