SHANGHAI SEMITECH

SHANGHAI SEMITECH
August 2005
SEMICONDUCTOR CO., LTD.
ESDAXXWX
Transil array for data protection
General Description
Features
2 up to 5 Unidirectional Transil functions
The ESDAxxWx are monolithic suppressors
designed to protect components connected to data
and transmission lines against ESD. These devices
clamp the voltage just above the logic level supply
for positive transients, and to a diode drop below
ground for negative transients.
Breakdown voltage:
VBR = 6.1 V min. and 25 V min.
Low leakage current: < 1 uA
Very small PCB area < 4.2 mm2 typically
High ESD protection level: up to 25 kV
High integration
Applications
Complies with the following standards
Computers
IEC61000-4-2
Printers
Level 4 15 kV (air discharge)
8 kV(contact discharge)
Communication systems
Cellular phones handsets and accessories
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
Wireline and wireless telephone sets
Set top boxes
Functional diagram
ESDA25W
ESDA6V1W5/ESDA25W5
ESD6V1-5W6
Absolute Ratings (Tamb=25°C )
Symbol
PPP
Parameter
Peak Pulse Power
(tp = 8/20μs)
Value
SDA25W
400
ESDA25W5/ESDA6V1W5
150
ESDA6V1-5W6
100
Units
W
TL
Maximum lead temperature for soldering during 10s
260
°C
Tstg
Storage Temperature Range
-40 to +125
°C
Top
Operating Temperature Range
-40 to +125
°C
ESDAXXWX
Electrical Parameter
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
IPP
Peak pulse current
IR
Reverse current
IF
Forward current
αT
Voltage temperature
coefficient
VF
Forward voltage drop
C
Capacitance
Rd
Dynamic
Electrical Characteristics
Part Numbers
VBR
VF
IR
VRM
IRM
Rd
αT
C
Typ.(1)
Max.(2)
Typ. 0v bias
Min.
Max.
v
v
mA
v
µA
v
mA
Ω
10-4/°C
pF
ESDA6V1W5
6.1
7.2
1
3
1
1.25
200
0.35
6
90
ESDA6V-5W6
6.1
7.2
1
3
1
1.25
200
0.61
6
50
ESDA25W
25
30
1
24
1
1.2
10
1.9
10
30
ESDA25W5
25
30
1
24
1
1.2
10
1.1
10
65
1.Square pulse IPP=15A,tp=2.5µs
Max.
IF
2.VBR=aT*(Tamb-25°C)*VBR(25°C)
Typical Characteristics
Fig1.Peak pulse power versus exponential
Pulse duration (Tj initial=25°C)
ShangHai Semitech Semiconductor Co., Ltd.
Fig2. Clamping voltage versus peak
pulse current(Tj initial=25°C, rectangular
Waveform,tp=2.5μs)
2.
ESDAXXWX
Fig3. Capacitance versus reverse
Applied voltage
Fig4. Peak forward voltage drop versus
forward current
Fig5.Relative variation of leakage current
Versus junction temperature
Package mechanical data
SOT-323-3L Package
ShangHai Semitech Semiconductor Co., Ltd.
3.
ESDAXXWX
SOT-323-5L Package
SOT-323-6L Package
ShangHai Semitech Semiconductor Co., Ltd.
4.