Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBD353
Schottky barrier double diode
Product data sheet
Supersedes data of 1999 May 25
2001 Oct 15
NXP Semiconductors
Product data sheet
Schottky barrier double diode
FEATURES
PMBD353
MARKING
• Low forward voltage
• Small SMD package
• Low capacitance.
PINNING
TYPE NUMBER
MARKING
CODE(1)
PMBD353
∗4F
PIN
Note
APPLICATIONS
• UHF mixer
• Sampling circuits
DESCRIPTION
1
cathode k1
2
anode a2
3
common connection a1, k2
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
• Modulators
• Phase detection.
handbook, 2 columns
3
DESCRIPTION
3
handbook, 2 columns
Planar Schottky barrier double diode
in a SOT23 small plastic SMD
package.
1
1
Top view
Fig.1
2
2
MGC487
MGC421
Simplified outline (SOT23) pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
−
4
V
IF
continuous forward current
−
30
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
100
°C
2001 Oct 15
2
NXP Semiconductors
Product data sheet
Schottky barrier double diode
PMBD353
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.2
IF = 0.1 mA
350
mV
IF = 1 mA
450
mV
IF = 10 mA
600
mV
IR
reverse current
VR = 3 V; note 1; see Fig.3
0.25
μA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.4
1
pF
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Refer to SOT23 standard mounting conditions.
2001 Oct 15
3
VALUE
UNIT
500
K/W
NXP Semiconductors
Product data sheet
Schottky barrier double diode
PMBD353
GRAPHICAL DATA
MLC795
2
handbook,10
halfpage
MLC796
10 4
handbook, halfpage
IR
(nA)
IF
(mA)
10 3
(1)
10 2
(2)
10
(1)
1
(3)
(2)
(3)
10
(4)
10−1
(4)
1
10−2
0
200
400
600
10 1
800
VF (mV)
(1)
(2)
(3)
(4)
Tamb = 100 °C.
Tamb = 60 °C.
Tamb = 25 °C.
Tamb = −40 °C.
Fig.2
Fig.3
MLC797
0.8
Cd
(pF)
0.7
0.6
0.5
0.4
1
2
3
V R (V) 4
f = 1 MHz; Tamb = 25 °C.
Diode capacitance as a function of reverse
voltage; typical values.
2001 Oct 15
2
V R (V)
3
(4) Tamb = −40 °C.
handbook, halfpage
Fig.4
1
(1) Tamb = 100 °C.
(2) Tamb = 60 °C.
(3) Tamb = 25 °C.
Forward current as a function of forward
voltage; typical values.
0
0
4
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Schottky barrier double diode
PMBD353
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2001 Oct 15
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
5
NXP Semiconductors
Product data sheet
Schottky barrier double diode
PMBD353
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
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does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Oct 15
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
613514/04/pp7
Date of release: 2001 Oct 15
Document order number: 9397 750 08769