DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D049 1PS76SB17 Schottky barrier diode Preliminary specification Supersedes data of 1996 Oct 14 1999 May 25 Philips Semiconductors Preliminary specification Schottky barrier diode 1PS76SB17 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic SMD package. • Low diode capacitance • ESD > 500 V; Human body model • Very small plastic SMD package. handbook, 4 columns k APPLICATIONS a • UHF mixers • Sampling circuits MAM283 • Modulators Marking code: S7. The marking bar indicates the cathode. • Phase detectors. Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 4 V IF continuous forward current − 30 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 100 °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS TYP. MAX. UNIT see Fig.2 IF = 0.1 mA − 300 mV IF = 1 mA 360 450 mV IF = 10 mA 470 600 mV IR reverse current VR = 3 V; see Fig.3 0.15 0.25 µA Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.4 0.8 1 pF f = 1 MHz; VR = 0.5 V; see Fig.4 0.65 − pF THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOD323 standard mounting conditions. 1999 May 25 2 VALUE UNIT 450 K/W Philips Semiconductors Preliminary specification Schottky barrier diode 1PS76SB17 GRAPHICAL DATA MLC795 2 handbook,10 halfpage MLC796 10 4 handbook, halfpage IR IF (mA) (nA) 10 3 (1) 10 2 (2) 10 (1) 1 (3) (2) (3) 10 (4) 10−1 (4) 1 10−2 0 200 400 600 10 1 800 VF (mV) 0 (1) Tamb = 100 °C. (2) Tamb = 60 °C. (3) Tamb = 25 °C. (1) Tamb = 100 °C. (2) Tamb = 60 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (4) Tamb = −40 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MLC797 0.8 handbook, halfpage Cd (pF) 0.7 0.6 0.5 0.4 0 1 2 3 V R (V) 4 f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1999 May 25 3 1 2 V R (V) 3 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Preliminary specification Schottky barrier diode 1PS76SB17 PACKAGE OUTLINE SOD323 Plastic surface mounted package; 2 leads A A1 , Q c Lp v M A HE A D 1 E bp 2 (1) 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp mm 1.1 0.8 + 0.05 − 0.05 0.40 0.25 c D E HE Lp Q v 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOD323 1999 May 25 EUROPEAN PROJECTION ISSUE DATE 98-09-14 4 Philips Semiconductors Preliminary specification Schottky barrier diode 1PS76SB17 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 25 5 Philips Semiconductors Preliminary specification Schottky barrier diode 1PS76SB17 NOTES 1999 May 25 6 Philips Semiconductors Preliminary specification Schottky barrier diode 1PS76SB17 NOTES 1999 May 25 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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