BAT17 Schottky barrier diode

DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D088
BAT17
Schottky barrier diode
Product data sheet
Supersedes data of 1999 May 26
2003 Mar 25
NXP Semiconductors
Product data sheet
Schottky barrier diode
FEATURES
BAT17
PINNING
• Low forward voltage
PIN
• Small SMD package
1
anode
• Low capacitance.
2
not connected
3
cathode
DESCRIPTION
APPLICATIONS
• UHF mixer
• Sampling circuits
• Modulators
• Phase detection.
handbook, halfpage
2
1
DESCRIPTION
2
n.c.
Planar Schottky barrier diode in a
small SOT23 plastic SMD package.
1
3
3
MARKING
TYPE NUMBER
MARKING
CODE(1)
BAT17
A3*
MAM171
Fig.1 Simplified outline (SOT23) and symbol.
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
4
V
IF
continuous forward current
−
30
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
100
°C
2003 Mar 25
2
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT17
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
CONDITIONS
MAX.
UNIT
see Fig.2
IF = 0.1 mA
350
mV
IF = 1 mA
450
mV
IF = 10 mA
600
mV
VR = 3 V; see Fig.3
0.25
μA
VR = 3 V; Tamb = 60 °C; see Fig.3
1.25
μA
rD
diode forward resistance
f = 1 kHz; IF = 5 mA
15
Ω
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.4
1
pF
F
noise figure
f = 900 MHz; note 1
8
dB
Note
1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise Fif = 1.5 dB; f = 35 MHz.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Refer to SOT23 standard mounting conditions.
2003 Mar 25
3
VALUE
UNIT
500
K/W
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT17
GRAPHICAL DATA
MLC795
2
handbook,10
halfpage
MLC796
10 4
handbook, halfpage
IR
(nA)
IF
(mA)
10 3
(1)
10 2
(2)
10
(1)
1
(3)
(2)
(3)
10
(4)
10−1
(4)
1
10−2
0
200
400
600
10 1
800
VF (mV)
(1) Tamb = 100 °C.
(2) Tamb = 60 °C.
Fig.2
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Fig.3
MLC797
0.8
handbook, halfpage
Cd
(pF)
0.7
0.6
0.5
0.4
1
2
3
V R (V) 4
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2003 Mar 25
1
(1) Tamb = 100 °C.
(2) Tamb = 60 °C.
Forward current as a function of forward
voltage; typical values.
0
0
4
2
V R (V)
3
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Reverse current as a function of reverse
voltage; typical values.
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT17
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2003 Mar 25
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
5
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT17
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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information supplied prior to the publication hereof.
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NXP Semiconductors makes no representation or
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specified use without further testing or modification.
2003 Mar 25
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
6
NXP Semiconductors
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Printed in The Netherlands
613514/03/pp7
Date of release: 2003 Mar 25
Document order number: 9397 750 10963