DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAT854W series Schottky barrier (double) diodes Product data sheet 2001 Feb 27 NXP Semiconductors Product data sheet Schottky barrier (double) diodes FEATURES BAT854W series PINNING • Very low forward voltage • Very low reverse current • Guard ring protected PIN 3 BAT854W • Very small SMD plastic package. APPLICATIONS • Ultra high-speed switching • Protection circuits • Low power consumption applications (e.g. hand-held applications). 1 1 a 2 n.c. 3 k Fig.2 1 k1 2 k2 3 a1,a2 BAT854W single diode configuration (symbol). 3 BAT854CW 1 a1 2 a2 3 k1, k2 1 Planar Schottky barrier diodes encapsulated in a SOT323 very small SMD plastic package. Single diodes and double diodes with different pinning are available. 2 MLC360 Fig.3 BAT854SW DESCRIPTION 2 n.c. MLC357 BAT854AW • Voltage clamping • Blocking diodes SYMBOL 1 a1 2 k2 3 k1, a2 BAT854AW diode configuration (symbol). 3 1 2 MARKING MLC359 TYPE NUMBER MARKING CODE BAT854W 81 BAT854AW 82 BAT854CW 83 BAT854SW 84 3 handbook, 2 columns 1 Fig.4 BAT854CW diode configuration (symbol). 2 Top view 3 MBC870 1 2 MLC358 Fig.1 2001 Feb 27 Simplified outline SOT323 and pin configuration. 2 Fig.5 BAT854SW diode configuration (symbol). NXP Semiconductors Product data sheet Schottky barrier (double) diodes BAT854W series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode − 40 V − 200 mA − 300 mA − 1 A storage temperature −65 +150 °C junction temperature − 150 °C operating ambient temperature −65 +150 °C VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 IFSM non-repetitive peak forward current t = 8.3 ms half sinewave; JEDEC method Tstg Tj Tamb ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF continuous forward voltage see Fig.6 IF = 0.1 mA 200 − mV IF = 1 mA 260 − mV IF = 10 mA 340 − mV IF = 30 mA − 420 mV IF = 100 mA − 550 mV IR continuous reverse current VR = 25 V; note 1; see Fig.7 − 0.5 μA Cd diode capacitance VR = 1 V; f = 1 MHz; see Fig.8 − 20 pF Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOT323 standard mounting conditions. 2001 Feb 27 3 VALUE UNIT 625 K/W NXP Semiconductors Product data sheet Schottky barrier (double) diodes BAT854W series GRAPHICAL DATA MLD546 103 handbook, halfpage MLD547 103 handbook, halfpage IF (mA) IR (μA) 102 102 (1) (2) 10 10 (1) (2) (3) 1 1 (3) 10−1 0 0.4 0.8 VF (V) 10−1 1.2 0 10 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.6 Fig.7 Forward current as a function of forward voltage; typical values. MLD548 20 Cd handbook, halfpage (pF) 16 12 8 4 0 10 0 20 30 VR (V) 40 f = 1 MHz; Tamb = 25 °C. Fig.8 Diode capacitance as a function of reverse voltage; typical values. 2001 Feb 27 4 20 30 VR (V) 40 Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Schottky barrier (double) diodes BAT854W series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2001 Feb 27 REFERENCES IEC JEDEC EIAJ SC-70 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 NXP Semiconductors Product data sheet Schottky barrier (double) diodes BAT854W series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2001 Feb 27 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp7 Date of release: 2001 Feb 27 Document order number: 9397 750 07935